TY - CHAP AU - Al-abassi, Salam AU - Darwish, Mahmoud Ibrahim Azmi AU - Pohl, László AU - Mizsei, János AU - Neumann, Péter Lajos ED - Vadim, Tsoi ED - Lorenzo, Codecasa ED - Bernhard, Wunderle TI - Comparative multiphysics simulation of VO2 based lateral devices T2 - Proceedings of the 27th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC'21 online) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway (NJ) SN - 9781665418973 PY - 2021 SP - 178 EP - 181 PG - 4 DO - 10.1109/THERMINIC52472.2021.9626517 UR - https://m2.mtmt.hu/api/publication/32236558 ID - 32236558 AB - Due to reaching the end of Moore’s era and minimising CMOS technology becomes difficult. Finding different materials to keep electronic devices evolving is a matter of scientists. A thermal electronic logic circuit (TELC) is one of the most prominent alternatives that has been proposed recently. Vanadium dioxide (VO2) is an essential material that has been utilised in TELC due to its thermal and electrical properties. VO2 transits its electrical property from the semiconductor phase into the metal phase at around 67oC. In this paper, two numerical methods were used to determine the electrical and thermal characteristics of VO2, and measured data compared the results. The phase-change material behaviour was modelled by two different softwares using different simulation methods, finite volume method FVM and finite element method FEM. The sample preparation and the thermal and electrical measurements were carried out in our cleanroom. LA - English DB - MTMT ER - TY - JOUR AU - Darwish, Mahmoud Ibrahim Azmi AU - Neumann, Péter Lajos AU - Mizsei, János AU - Pohl, László TI - Electro-Thermal Simulation of Vertical VO2 Thermal-Electronic Circuit Elements JF - ENERGIES J2 - ENERGIES VL - 13 PY - 2020 IS - 13 SN - 1996-1073 DO - 10.3390/en13133447 UR - https://m2.mtmt.hu/api/publication/31369246 ID - 31369246 AB - Advancement of classical silicon-based circuit technology is approaching maturity and saturation. The worldwide research is now focusing wide range of potential technologies for the “More than Moore” era. One of these technologies is thermal-electronic logic circuits based on the semiconductor-to-metal phase transition of vanadium dioxide, a possible future logic circuits to replace the conventional circuits. In thermal-electronic circuits, information flows in a combination of thermal and electronic signals. Design of these circuits will be possible once appropriate device models become available. Characteristics of vanadium dioxide are under research by preparing structures in laboratory and their validation by simulation models. Modeling and simulation of these devices is challenging due to several nonlinearities, discussed in this article. Introduction of custom finite volumes method simulator has however improved handling of special properties of vanadium dioxide. This paper presents modeling and electro-thermal simulation of vertically structured devices of different dimensions, 10 nm to 300 nm layer thicknesses and 200 nm to 30 um radii. Results of this research will facilitate determination of sample sizes in the next phase of device modeling. LA - English DB - MTMT ER - TY - CHAP AU - Darwish, Mahmoud Ibrahim Azmi AU - Neumann, Péter Lajos AU - Mizsei, János AU - Pohl, László TI - Study of Dynamic Simulation for Thermal-Electronic Logic Circuits T2 - Proceedings of the 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway (NJ) SN - 9781728176437 T3 - International Workshop on Thermal Investigations of ICs and Systems, ISSN 2474-1515 PY - 2020 SP - 97 EP - 102 PG - 6 DO - 10.1109/THERMINIC49743.2020.9420495 UR - https://m2.mtmt.hu/api/publication/31778148 ID - 31778148 AB - Emerging devices and materials in computing industry are recently of great interest because classical silicon-based circuit development is saturating due to scaling limits. Thermal-electronic logic circuit (TELC) concept is a promising approach to enhance conventional CMOS circuits or even replace them. Semiconductor-to-metal transition (SMT) of vanadium dioxide (VO2) is the main part of TELC as it allows transmission and control of information flow both electrically and thermally. The first TELC inverter is introduced in this article, dynamic simulations are performed to test its behavior and relation between propagation delay and input voltage is demonstrated. A new phase transition model is used to upgrade our SUNRED simulator. This new version is accurate and proved to be suitable for dynamic simulations. This article presents first dynamic simulation of SMT material. LA - English DB - MTMT ER - TY - CHAP AU - Pohl, László AU - Darwish, Mahmoud Ibrahim Azmi AU - Mizsei, János TI - Electro-Thermal Investigation of SMT Resistors for Thermal-Electrical Logic Circuits by Simulation T2 - 2019 25TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC 2019) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, New York SN - 9781728120782 PY - 2019 SP - 1 EP - 4 PG - 4 DO - 10.1109/THERMINIC.2019.8923402 UR - https://m2.mtmt.hu/api/publication/30842714 ID - 30842714 N1 - WoS:hiba:000534514800004 2020-09-02 15:44 befoglaló egyiknél nincsenek szerzők, befoglaló cím nem egyezik AB - Thermal-electrical logic circuits can be a possible alternative to CMOS technology. The basic element of these circuits is the vanadium dioxide resistor. Currently, only macroscopic models exist for the operation of VO2 resistors. The development of a submicron model requires the design, production and measurement of submicron-sized samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are performed using a macroscopic material model in the range of 200 µm to 50 nm resistor width and 20 µm to 50 nm length with 50 nm layer thickness. These results in the submicron range can only be considered as estimates, but they can be used to determine the size of the samples required for submicron modelling. LA - English DB - MTMT ER - TY - JOUR AU - Paolucci, Federico AU - Marchegiani, Giampiero AU - Strambini, Elia AU - Giazotto, Francesco TI - Phase-Tunable Thermal Logic: Computation with Heat JF - PHYSICAL REVIEW APPLIED J2 - PHYS REV APPL VL - 10 PY - 2018 IS - 2 PG - 10 SN - 2331-7019 DO - 10.1103/PhysRevApplied.10.024003 UR - https://m2.mtmt.hu/api/publication/27606379 ID - 27606379 N1 - Funding Agency and Grant Number: European Research Council under the European Unions Seventh Framework Programme/ERC [615187-COMANCHE]; Tuscany Region under the FARFAS 2014 project SCI-ADRO; Marie Curie Individual Fellowship (MSCA-IFEF-ST) [660532-SuperMag] Funding text: We thank A. Braggio for useful discussions. We acknowledge the European Research Council under the European Unions Seventh Framework Programme (FP7/2007-2013)/ERC Grant No. 615187-COMANCHE for partial financial support. The work of F.P. is funded by Tuscany Region under the FARFAS 2014 project SCI-ADRO. The work of E.S. is funded by a Marie Curie Individual Fellowship (MSCA-IFEF-ST No. 660532-SuperMag). LA - English DB - MTMT ER - TY - JOUR AU - Pohl, László AU - Soma, Ur AU - Mizsei, János TI - Thermoelectrical modelling and simulation of devices based on VO2 JF - MICROELECTRONICS RELIABILITY J2 - MICROELECTRON RELIAB VL - 79 PY - 2017 SP - 387 EP - 394 PG - 8 SN - 0026-2714 DO - 10.1016/j.microrel.2017.03.027 UR - https://m2.mtmt.hu/api/publication/3204967 ID - 3204967 N1 - WoS:hiba:000417774400046 2020-08-29 11:08 cikkazonosító nem egyezik AB - Limits of development of conventional silicon-based integrated circuits get closer. More and more effort is done to develop new devices for integrated circuits. A promising structure is based on the semiconductor-to-metal phase change of vanadium-dioxide at about 67 °C. In these circuits the information is carried by combined thermal and electrical currents. For device modelling and circuit design, accurate distributed electro-thermal transient simulation is mandatory. This paper is the first one to present an electro-thermal transient simulation method for VO2 devices operating in real-world conditions. The paper presents three VO2 material models, the algorithmic extension of an electro-thermal field simulator to be able to handle hysteresis and the transient simulation issues of VO2 and the modelling of VO2 based devices. The paper compares measured and simulated device characteristics. LA - English DB - MTMT ER - TY - CHAP AU - Soma, Ur AU - Mizsei, János AU - Pohl, László ED - Poppe, András TI - Modelling of the Thermoelectrical Performance of Devices Based on VO2 T2 - 2016 22nd International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'16) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, New York SN - 9781509054503 PY - 2016 SP - 307 EP - 310 PG - 4 DO - 10.1109/THERMINIC.2016.7749072 UR - https://m2.mtmt.hu/api/publication/3117643 ID - 3117643 N1 - Cited By :2 Export Date: 21 September 2022 Correspondence Address: Pohl, L.; Budapest University of Technology and EconomicsHungary; email: pohl@eet.bme.hu LA - English DB - MTMT ER - TY - CHAP AU - Mizsei, János AU - Bein, Márton AU - Jyrki, Lappalainen AU - Juhász, László ED - Chris, Bailey ED - Bernhard, Wunderle ED - Sebastian, Volz TI - Thermal-Electronic Circuits: Basics, Simulations, Experiments T2 - 2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, New York SN - 9781467397063 PY - 2015 PG - 6 DO - 10.1109/THERMINIC.2015.7389599 UR - https://m2.mtmt.hu/api/publication/2953874 ID - 2953874 N1 - Budapest University of Technology and Economics, Budapest, Hungary University of Oulu, Oulu, Finland Cited By :2 Export Date: 21 September 2022 Correspondence Address: Mizsei, J.; Budapest University of Technology and EconomicsHungary; email: mizsei@eet.bme.hu AB - Semiconductor devices are sensitive on temperature, and they produce a lot of heat because of the high power density. Therefore thermal effects have high importance in the operation of the semiconductor based microsystems. The thermal management has key importance in the microsystem construction, however thermal effects has been treated as parasitic phenomena until now. Recent research demonstrated that beside the electrical signal the thermal signal can also be treated as logic variable. In order to get closer to both the construction aspects and modeling questions of thermal-electronic devices lateral thin film semiconductor devices were constructed by laser ablation (vanadium dioxide, VO2) and cathode sputtering technology (Pt electrodes). The high temperature sensitivity of semiconductor-metal transition (SMT) semiconductor resulted in promising switching characteristics. A model was constructed and thermal-electric simulations were performed; the results are in good correlation with the measurements validating both the model and the explanation of the behavior. LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Bein, Márton AU - J, Lappalainen AU - Juhász, László AU - Plesz, Balázs TI - The Phonsistor – A Novel VO2 Based Nanoscale Thermal-electronic Device and Its Application in Thermal-electronic Logic Circuits (TELC) JF - MATERIALS TODAY: PROCEEDINGS J2 - MATER TOD PROC VL - 2 PY - 2015 IS - 8 SP - 4272 EP - 4279 PG - 8 SN - 2214-7853 DO - 10.1016/j.matpr.2015.09.013 UR - https://m2.mtmt.hu/api/publication/2984697 ID - 2984697 N1 - Budapest University of Technology and Economics, Department of Electron Devices, Budapest, H-1521, Hungary University of Oulu, Department of Electrical Engineering, P.O. Box 4500, Oulu, FIN-90014, Finland Cited By :9 Export Date: 21 September 2022 Correspondence Address: Mizsei, J.; Budapest University of Technology and Economics, Hungary; email: mizsei@eet.bme.hu AB - The continuous development of electronics has been characterized by Moore's law. Although the current CMOS integrated circuit development is driven by a lot of innovations, there are still some limits determined by unavoidable physical effects. There are many new ideas for building atomic or molecular scale devices for the information technology, but there is still a gap between CMOS technology and novel devices. The recently proposed thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) may help to fill this gap. The operation is based on the semiconductor-metal transition (SMT) effect shown by certain materials, for example VO2. The switches can be excited by electronic and thermal signals as well, thus two different physical parameters are available for representing the logic states. A proof of concept for the device operation has been demonstrated, and device scaling and integration issues will be discussed too. LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Bein, Márton AU - J, Lappalainen AU - Juhász, László TI - Thermal-electronic logic circuits: Scaling down JF - MICROELECTRONICS JOURNAL J2 - MICROELECTRON J VL - 46 PY - 2015 IS - 12 A SP - 1175 EP - 1178 PG - 4 SN - 0959-8324 DO - 10.1016/j.mejo.2015.10.003 UR - https://m2.mtmt.hu/api/publication/2976582 ID - 2976582 N1 - Budapest University of Technology and Economics, Department of Electron Devices, Budapest, H-1521, Hungary Microelectronics and Materials Physics Laboratories, University of Oulu, Linnanmaa, Oulu, FIN-90570, Finland Cited By :6 Export Date: 21 September 2022 CODEN: MICEB Correspondence Address: Mizsei, J.; Budapest University of Technology and Economics, Hungary; email: mizsei@eet.bme.hu LA - English DB - MTMT ER - TY - CHAP AU - Mizsei, János AU - Bein, Márton AU - Juhász, László AU - Jelinek, Éva ED - Franz, M ED - Krammer, O ED - Nicolics, J ED - Wohlrabe, H TI - Thermal-electronic devices and thermal-electronic logic circuits (TELC) T2 - 38th International Spring Seminar on Electronics Technology (ISSE) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway (NJ) SN - 9781479988600 T3 - International Spring Seminar on Electronics Technology ISSE, ISSN 2161-2528 PY - 2015 SP - 61 EP - 65 PG - 5 DO - 10.1109/ISSE.2015.7247963 UR - https://m2.mtmt.hu/api/publication/2954107 ID - 2954107 N1 - Cited By :3 Export Date: 21 September 2022 AB - The core of this work is to introduce a new electro-thermal device operation principle based on a thermally controlled temperature sensitive component. General conditions for operation and results from practical realization are summarized for this new functional thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) formed of phonsistors. Our experimental TELC devices has been realized in lateral form using thin VO2 layers on oxidized silicon substrate and thin platinum layers as metallization and contact electrodes. LA - English DB - MTMT ER - TY - CHAP AU - Mizsei, János AU - Bein, Márton AU - Jyrki, Lappalainen AU - Juhász, László ED - Chris, Bailey ED - Kerecsen Istvánné Rencz, Márta ED - Bernhard, Wunderle TI - Scaling of Thermal-Electronic Logic Circuits T2 - 20th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'14) PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, New York SN - 9781479954155 PY - 2014 PG - 3 DO - 10.1109/THERMINIC.2014.6972509 UR - https://m2.mtmt.hu/api/publication/2739978 ID - 2739978 N1 - Budapest University of Technology and Economics, Budapest, Hungary University of Oulu, Oulu, Finland Export Date: 21 September 2022 Correspondence Address: Mizsei, J.; Budapest University of Technology and EconomicsHungary AB - The thermal-electric logic circuit (TELC) concept is a possible way to overcome the scaling down problems of the conventional CMOS integrated circuits having very complex structure nowadays. The basic component of the TELC is the metal-insulator transition (MIT) switch, which is an extremely simple bulk type device. This work evaluates the effect of the scaling down on the speed of the VO 2 thermal-electric switch. Different types (lateral and vertical) of VO 2 resistors have been produced by laser ablation. The measured switching time strongly correlates with the characteristic size of the device. The energy consumption (power-delay product) of the scaled-down switching device estimated as a sum of the energy needed for heating the thermal diffusion length sized environment of the device, heating the device itself and the latent heat of phase transition of VO2. LA - English DB - MTMT ER -