@inproceedings{MTMT:32236558,
	title = {Comparative multiphysics simulation of VO2 based lateral devices},
	url = {https://m2.mtmt.hu/api/publication/32236558},
	author = {Al-abassi, Salam and Darwish, Mahmoud Ibrahim Azmi and Pohl, László and Mizsei, János and Neumann, Péter Lajos},
	booktitle = {Proceedings of the 27th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC'21 online)},
	doi = {10.1109/THERMINIC52472.2021.9626517},
	unique-id = {32236558},
	abstract = {Due to reaching the end of Moore’s era and minimising CMOS technology becomes difficult. Finding different materials to keep electronic devices evolving is a matter of scientists. A thermal electronic logic circuit (TELC) is one of the most prominent alternatives that has been proposed recently. Vanadium dioxide (VO2) is an essential material that has been utilised in TELC due to its thermal and electrical properties. VO2 transits its electrical property from the semiconductor phase into the metal phase at around 67oC. In this paper, two numerical methods were used to determine the electrical and thermal characteristics of VO2, and measured data compared the results. The phase-change material behaviour was modelled by two different softwares using different simulation methods, finite volume method FVM and finite element method FEM. The sample preparation and the thermal and electrical measurements were carried out in our cleanroom.},
	year = {2021},
	pages = {178-181},
	orcid-numbers = {Pohl, László/0000-0003-2390-1381; Mizsei, János/0000-0003-3411-1502; Neumann, Péter Lajos/0000-0002-2881-5733}
}

@article{MTMT:31369246,
	title = {Electro-Thermal Simulation of Vertical VO2 Thermal-Electronic Circuit Elements},
	url = {https://m2.mtmt.hu/api/publication/31369246},
	author = {Darwish, Mahmoud Ibrahim Azmi and Neumann, Péter Lajos and Mizsei, János and Pohl, László},
	doi = {10.3390/en13133447},
	journal-iso = {ENERGIES},
	journal = {ENERGIES},
	volume = {13},
	unique-id = {31369246},
	issn = {1996-1073},
	abstract = {Advancement of classical silicon-based circuit technology is approaching maturity and saturation. The worldwide research is now focusing wide range of potential technologies for the “More than Moore” era. One of these technologies is thermal-electronic logic circuits based on the semiconductor-to-metal phase transition of vanadium dioxide, a possible future logic circuits to replace the conventional circuits. In thermal-electronic circuits, information flows in a combination of thermal and electronic signals. Design of these circuits will be possible once appropriate device models become available. Characteristics of vanadium dioxide are under research by preparing structures in laboratory and their validation by simulation models. Modeling and simulation of these devices is challenging due to several nonlinearities, discussed in this article. Introduction of custom finite volumes method simulator has however improved handling of special properties of vanadium dioxide. This paper presents modeling and electro-thermal simulation of vertically structured devices of different dimensions, 10 nm to 300 nm layer thicknesses and 200 nm to 30 um radii. Results of this research will facilitate determination of sample sizes in the next phase of device modeling.},
	year = {2020},
	eissn = {1996-1073},
	orcid-numbers = {Neumann, Péter Lajos/0000-0002-2881-5733; Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@inproceedings{MTMT:31778148,
	title = {Study of Dynamic Simulation for Thermal-Electronic Logic Circuits},
	url = {https://m2.mtmt.hu/api/publication/31778148},
	author = {Darwish, Mahmoud Ibrahim Azmi and Neumann, Péter Lajos and Mizsei, János and Pohl, László},
	booktitle = {Proceedings of the 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)},
	doi = {10.1109/THERMINIC49743.2020.9420495},
	unique-id = {31778148},
	abstract = {Emerging devices and materials in computing industry are recently of great interest because classical silicon-based circuit development is saturating due to scaling limits. Thermal-electronic logic circuit (TELC) concept is a promising approach to enhance conventional CMOS circuits or even replace them. Semiconductor-to-metal transition (SMT) of vanadium dioxide (VO2) is the main part of TELC as it allows transmission and control of information flow both electrically and thermally. The first TELC inverter is introduced in this article, dynamic simulations are performed to test its behavior and relation between propagation delay and input voltage is demonstrated. A new phase transition model is used to upgrade our SUNRED simulator. This new version is accurate and proved to be suitable for dynamic simulations. This article presents first dynamic simulation of SMT material.},
	year = {2020},
	pages = {97-102},
	orcid-numbers = {Neumann, Péter Lajos/0000-0002-2881-5733; Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@inproceedings{MTMT:30842714,
	title = {Electro-Thermal Investigation of SMT Resistors for Thermal-Electrical Logic Circuits by Simulation},
	url = {https://m2.mtmt.hu/api/publication/30842714},
	author = {Pohl, László and Darwish, Mahmoud Ibrahim Azmi and Mizsei, János},
	booktitle = {2019 25TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC 2019)},
	doi = {10.1109/THERMINIC.2019.8923402},
	unique-id = {30842714},
	abstract = {Thermal-electrical logic circuits can be a possible alternative to CMOS technology. The basic element of these circuits is the vanadium dioxide resistor. Currently, only macroscopic models exist for the operation of VO2 resistors. The development of a submicron model requires the design, production and measurement of submicron-sized samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are performed using a macroscopic material model in the range of 200 µm to 50 nm resistor width and 20 µm to 50 nm length with 50 nm layer thickness. These results in the submicron range can only be considered as estimates, but they can be used to determine the size of the samples required for submicron modelling.},
	keywords = {THERMODYNAMICS},
	year = {2019},
	pages = {1-4},
	orcid-numbers = {Pohl, László/0000-0003-2390-1381; Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:27606379,
	title = {Phase-Tunable Thermal Logic: Computation with Heat},
	url = {https://m2.mtmt.hu/api/publication/27606379},
	author = {Paolucci, Federico and Marchegiani, Giampiero and Strambini, Elia and Giazotto, Francesco},
	doi = {10.1103/PhysRevApplied.10.024003},
	journal-iso = {PHYS REV APPL},
	journal = {PHYSICAL REVIEW APPLIED},
	volume = {10},
	unique-id = {27606379},
	issn = {2331-7019},
	year = {2018},
	eissn = {2331-7019}
}

@article{MTMT:3204967,
	title = {Thermoelectrical modelling and simulation of devices based on VO2},
	url = {https://m2.mtmt.hu/api/publication/3204967},
	author = {Pohl, László and Soma, Ur and Mizsei, János},
	doi = {10.1016/j.microrel.2017.03.027},
	journal-iso = {MICROELECTRON RELIAB},
	journal = {MICROELECTRONICS RELIABILITY},
	volume = {79},
	unique-id = {3204967},
	issn = {0026-2714},
	abstract = {Limits of development of conventional silicon-based integrated 
		circuits get closer. More and more effort is done
		to develop new devices for integrated circuits. A promising 
		structure is based on the semiconductor-to-metal
		phase change of vanadium-dioxide at about 67 °C. In these 
		circuits the information is carried by combined thermal
		and electrical currents. For device modelling and circuit 
		design, accurate distributed electro-thermal transient
		simulation is mandatory. This paper is the first one to 
		present an electro-thermal transient simulation
		method for VO2 devices operating in real-world conditions. The 
		paper presents three VO2 material models, the
		algorithmic extension of an electro-thermal field simulator to 
		be able to handle hysteresis and the transient simulation
		issues of VO2 and the modelling of VO2 based devices. The 
		paper compares measured and simulated device
		characteristics.},
	year = {2017},
	eissn = {1872-941X},
	pages = {387-394},
	orcid-numbers = {Pohl, László/0000-0003-2390-1381; Mizsei, János/0000-0003-3411-1502}
}

@inproceedings{MTMT:3117643,
	title = {Modelling of the Thermoelectrical Performance of Devices Based on VO2},
	url = {https://m2.mtmt.hu/api/publication/3117643},
	author = {Soma, Ur and Mizsei, János and Pohl, László},
	booktitle = {2016 22nd International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'16)},
	doi = {10.1109/THERMINIC.2016.7749072},
	unique-id = {3117643},
	year = {2016},
	pages = {307-310},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@inproceedings{MTMT:2953874,
	title = {Thermal-Electronic Circuits: Basics, Simulations, Experiments},
	url = {https://m2.mtmt.hu/api/publication/2953874},
	author = {Mizsei, János and Bein, Márton and Jyrki, Lappalainen and Juhász, László},
	booktitle = {2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)},
	doi = {10.1109/THERMINIC.2015.7389599},
	unique-id = {2953874},
	abstract = {Semiconductor devices are sensitive on temperature, and they produce a lot of heat because of the high power density. Therefore thermal effects have high importance in the operation of the semiconductor based microsystems. The thermal management has key importance in the microsystem construction, however thermal effects has been treated as parasitic phenomena until now. Recent research demonstrated that beside the electrical signal the thermal signal can also be treated as logic variable. In order to get closer to both the construction aspects and modeling questions of thermal-electronic devices lateral thin film semiconductor devices were constructed by laser ablation (vanadium dioxide, VO2) and cathode sputtering technology (Pt electrodes). The high temperature sensitivity of semiconductor-metal transition (SMT) semiconductor resulted in promising switching characteristics. A model was constructed and thermal-electric simulations were performed; the results are in good correlation with the measurements validating both the model and the explanation of the behavior.},
	keywords = {METAL-INSULATOR-TRANSITION; VO2},
	year = {2015},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:2984697,
	title = {The Phonsistor – A Novel VO2 Based Nanoscale Thermal-electronic Device and Its Application in Thermal-electronic Logic Circuits (TELC)},
	url = {https://m2.mtmt.hu/api/publication/2984697},
	author = {Mizsei, János and Bein, Márton and J, Lappalainen and Juhász, László and Plesz, Balázs},
	doi = {10.1016/j.matpr.2015.09.013},
	journal-iso = {MATER TOD PROC},
	journal = {MATERIALS TODAY: PROCEEDINGS},
	volume = {2},
	unique-id = {2984697},
	issn = {2214-7853},
	abstract = {The continuous development of electronics has been characterized by Moore's law. Although the current CMOS integrated circuit development is driven by a lot of innovations, there are still some limits determined by unavoidable physical effects. There are many new ideas for building atomic or molecular scale devices for the information technology, but there is still a gap between CMOS technology and novel devices. The recently proposed thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) may help to fill this gap. The operation is based on the semiconductor-metal transition (SMT) effect shown by certain materials, for example VO2. The switches can be excited by electronic and thermal signals as well, thus two different physical parameters are available for representing the logic states. A proof of concept for the device operation has been demonstrated, and device scaling and integration issues will be discussed too.},
	year = {2015},
	pages = {4272-4279},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:2976582,
	title = {Thermal-electronic logic circuits: Scaling down},
	url = {https://m2.mtmt.hu/api/publication/2976582},
	author = {Mizsei, János and Bein, Márton and J, Lappalainen and Juhász, László},
	doi = {10.1016/j.mejo.2015.10.003},
	journal-iso = {MICROELECTRON J},
	journal = {MICROELECTRONICS JOURNAL},
	volume = {46},
	unique-id = {2976582},
	issn = {0959-8324},
	year = {2015},
	eissn = {1879-2391},
	pages = {1175-1178},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@inproceedings{MTMT:2954107,
	title = {Thermal-electronic devices and thermal-electronic logic circuits (TELC)},
	url = {https://m2.mtmt.hu/api/publication/2954107},
	author = {Mizsei, János and Bein, Márton and Juhász, László and Jelinek, Éva},
	booktitle = {38th International Spring Seminar on Electronics Technology (ISSE)},
	doi = {10.1109/ISSE.2015.7247963},
	unique-id = {2954107},
	abstract = {The core of this work is to introduce a new electro-thermal device operation principle based on a thermally controlled temperature sensitive component. General conditions for operation and results from practical realization are summarized for this new functional thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) formed of phonsistors. Our experimental TELC devices has been realized in lateral form using thin VO2 layers on oxidized silicon substrate and thin platinum layers as metallization and contact electrodes.},
	keywords = {METAL-INSULATOR-TRANSITION},
	year = {2015},
	pages = {61-65},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@inproceedings{MTMT:2739978,
	title = {Scaling of Thermal-Electronic Logic Circuits},
	url = {https://m2.mtmt.hu/api/publication/2739978},
	author = {Mizsei, János and Bein, Márton and Jyrki, Lappalainen and Juhász, László},
	booktitle = {20th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'14)},
	doi = {10.1109/THERMINIC.2014.6972509},
	unique-id = {2739978},
	abstract = {The thermal-electric logic circuit (TELC) concept is a possible way to overcome the scaling down problems of the conventional CMOS integrated circuits having very complex structure nowadays. The basic component of the TELC is the metal-insulator transition (MIT) switch, which is an extremely simple bulk type device. This work evaluates the effect of the scaling down on the speed of the VO 2 thermal-electric switch. Different types (lateral and vertical) of VO 2 resistors have been produced by laser ablation. The measured switching time strongly correlates with the characteristic size of the device. The energy consumption (power-delay product) of the scaled-down switching device estimated as a sum of the energy needed for heating the thermal diffusion length sized environment of the device, heating the device itself and the latent heat of phase transition of VO2.},
	keywords = {TRANSITION},
	year = {2014},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}