@article{MTMT:33183761, title = {The role of the surface passivation in the mechanical properties of wurtzite InAs and InP nanowires: first-principles calculations}, url = {https://m2.mtmt.hu/api/publication/33183761}, author = {Bassotto, Luana Campagnolo and da Silva, Ivana Zanella and dos Santos, Claudia Lange}, doi = {10.1140/epjp/s13360-022-03329-8}, journal-iso = {EUR PHYS J PLUS}, journal = {EUROPEAN PHYSICAL JOURNAL PLUS}, volume = {137}, unique-id = {33183761}, issn = {2190-5444}, abstract = {We investigate the effect of surface passivation on the mechanical properties of InAs and InP nanowires (NWs) as a function of diameter using density-functional theory. The unpassivated and pseudohydrogen-passivated NWs are aligned along the [0001] direction of the wurtzite structure and have diameters ranging from 1 to 3 nm, approximately. The equilibrium lattice parameters of the NWs are seen to decrease with decreasing diameter, this reduction being more pronounced for the unpassivated NWs. Moreover, for similar diameters, the equilibrium lattice parameters of the unpassivated NWs, due to the radial expansion of As/P atoms on the surface region, are smaller than that for the pseudohydrogen-passivated NWs. The Young's modulus of the unpassivated InAs and InP NWs increases as the diameter decreases while that for the pseudohydrogen-passivated NWs an opposite trend was observed. The Poisson's ratio of the studied NWs, on the other hand, increases with decreasing diameters, and the calculated values for this quantity are almost three times larger for the unpassivated NWs when compared to that of the pseudohydrogen-passivated NWs. This shows that the surface passivation in [0001] WZ InAs and InP NWs has a crucial role in the understanding of the mechanical properties of these systems at nanometric sizes.}, year = {2022} } @article{MTMT:32976934, title = {Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties}, url = {https://m2.mtmt.hu/api/publication/32976934}, author = {Gandolfi, Marco and Peli, Simone and Diego, Michele and Danesi, Stefano and Giannetti, Claudio and Alessandri, Ivano and Zannier, Valentina and Demontis, Valeria and Rocci, Mirko and Beltram, Fabio and Sorba, Lucia and Roddaro, Stefano and Rossella, Francesco and Banfi, Francesco}, doi = {10.1021/acs.jpcc.2c01060}, journal-iso = {J PHYS CHEM C}, journal = {JOURNAL OF PHYSICAL CHEMISTRY C}, volume = {126}, unique-id = {32976934}, issn = {1932-7447}, abstract = {InAs nanowires are emerging as go-to materials in avariety of applications ranging from optoelectronics to nano-electronics, yet a consensus on their mechanical properties is stilllacking. The mechanical properties of wurtzite InAs nanowires arehere investigated via a multitechnique approach, exploitingelectron microscopies, ultrafast photoacoustics, andfinite elementsimulations. A benchmarked elastic matrix is provided and a Youngmodulus of 97 GPa is obtained, thus clarifying the debated issue ofInAs NW elastic properties. The validity of the analyticalapproaches and approximations commonly adopted to retrievethe elastic properties from ultrafast spectroscopies is discussed.The mechanism triggering the oscillations is unveiled. Nanowireoscillations in this system arise from a sudden expansion of the supporting substrate rather than the nanowire itself. This mechanismconstitutes a new paradigm, being at variance with respect to the excitation mechanisms so far identified in ultrafast experiments onnanowires and on a plethora of nanosystems. The presentfindings are relevant in view of applications involving InAs nanowires,knowledge of their mechanical properties being crucial for any device engineering beyond a trial-and-error approach. The resultsbear generality beyond the specific case, the launching mechanism potentially encompassing a variety of systems serving as nano-optomechanical resonators.}, year = {2022}, eissn = {1932-7455}, pages = {6361-6372}, orcid-numbers = {Diego, Michele/0000-0003-0807-9414; Giannetti, Claudio/0000-0003-2664-9492; Alessandri, Ivano/0000-0003-0332-0723; Banfi, Francesco/0000-0002-7465-8417} } @article{MTMT:32552315, title = {Double Nanowires for Hybrid Quantum Devices}, url = {https://m2.mtmt.hu/api/publication/32552315}, author = {Kanne, Thomas and Olsteins, Dags and Marnauza, Mikelis and Vekris, Alexandros and Estrada Saldaña, Juan Carlos and Loric̀, Sara and Schlosser, Rasmus D. and Ross, Daniel and Csonka, Szabolcs and Grove-Rasmussen, Kasper and Nygård, Jesper}, doi = {10.1002/adfm.202107926}, journal-iso = {ADV FUNCT MATER}, journal = {ADVANCED FUNCTIONAL MATERIALS}, volume = {32}, unique-id = {32552315}, issn = {1616-301X}, abstract = {Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.}, year = {2022}, eissn = {1616-3028} } @article{MTMT:33267730, title = {Mechanical Characterization of Two-Segment Free-Standing ZnO Nanowires Using Lateral Force Microscopy}, url = {https://m2.mtmt.hu/api/publication/33267730}, author = {Volk, János and Radó, János and Baji, Zsófia and Erdélyi, Róbert}, doi = {10.3390/nano12234120}, journal-iso = {NANOMATERIALS-BASEL}, journal = {NANOMATERIALS}, volume = {12}, unique-id = {33267730}, abstract = {Mechanical characterization of quasi one-dimensional nanostructures is essential for the design of novel nanoelectromechanical systems. However, the results obtained on basic mechanical quantities, such as Young’s modulus and fracture strength, show significant standard deviation in the literature. This is partly because of diversity in the quality of the nanowire, and partly because of inappropriately performed mechanical tests and simplified mechanical models. Here we present orientation-controlled bending and fracture studies on wet chemically grown vertical ZnO nanowires, using lateral force microscopy. The lateral force signal of the atomic force microscope was calibrated by a diamagnetic levitation spring system. By acquiring the bending curves of 14 nanowires, and applying a two-segment mechanical model, an average bending modulus of 108 ± 17 GPa was obtained, which was 23% lower than the Young’s modulus of bulk ZnO in the [0001] direction. It was also found that the average fracture strain and stress inside the nanowire was above 3.1 ± 0.3 % and 3.3 ± 0.3 GPa, respectively. However, the fracture of the nanowires was governed by the quality of the nanowire/substrate interface. The demonstrated technique is a relatively simple and productive way for the accurate mechanical characterization of vertical nanowire arrays.}, year = {2022}, eissn = {2079-4991}, orcid-numbers = {Volk, János/0000-0003-3633-6190; Baji, Zsófia/0000-0001-5051-3128; Erdélyi, Róbert/0000-0003-0202-4084} } @article{MTMT:32976935, title = {Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures}, url = {https://m2.mtmt.hu/api/publication/32976935}, author = {Zhang, Leilei and Li, Xing and Cheng, Shaobo and Shan, Chongxin}, doi = {10.3390/ma15051917}, journal-iso = {MATERIALS}, journal = {MATERIALS}, volume = {15}, unique-id = {32976935}, abstract = {III-V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure-property relationship of III-V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III-V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III-V NWs. Finally, the promising applications of III-V materials in the energy-storage field are introduced.}, keywords = {Structure evolution; Structure-property relationship; growth dynamics; III-V nanowires; in situ technique}, year = {2022}, eissn = {1996-1944}, orcid-numbers = {Li, Xing/0000-0002-4524-600X} } @mastersthesis{MTMT:31903621, title = {Total Tomography of III-As Nanowire Emitters: Atom Probe Tomography and X-Ray Imaging of Nanowire Heterostructures}, url = {https://m2.mtmt.hu/api/publication/31903621}, isbn = {9798698574415}, author = {Hill, Megan O}, publisher = {Northwestern University Evanston}, unique-id = {31903621}, year = {2020} } @article{MTMT:27392273, title = {Piezoelectricity in non-nitride III-V nanowires: Challenges and opportunities}, url = {https://m2.mtmt.hu/api/publication/27392273}, author = {Calahorra, Y and Kar-Narayan, S}, doi = {10.1557/jmr.2018.29}, journal-iso = {J MATER RES}, journal = {JOURNAL OF MATERIALS RESEARCH}, volume = {33}, unique-id = {27392273}, issn = {0884-2914}, year = {2018}, eissn = {2044-5326}, pages = {611-624} } @article{MTMT:26672886, title = {Study on fracture behavior of individual InAs nanowires using an electron-beam-drilled notch}, url = {https://m2.mtmt.hu/api/publication/26672886}, author = {Choi, S and Lee, JH and Pin, MW and Jang, DW and Hong, SG and Cho, B and Lee, SJ and Jeong, JS and Yi, SH and Kim, YH}, doi = {10.1039/c7ra01117b}, journal-iso = {RSC ADV}, journal = {RSC ADVANCES}, volume = {7}, unique-id = {26672886}, issn = {2046-2069}, year = {2017}, eissn = {2046-2069}, pages = {16655-16661} } @article{MTMT:26273819, title = {In-situ environmental scanning electron microscopy for probing the properties of advanced energy materials}, url = {https://m2.mtmt.hu/api/publication/26273819}, author = {Li, X and Wei, X and Chen, Q}, doi = {10.1504/IJNM.2016.079214}, journal-iso = {International Journal of Nanomanufacturing}, journal = {International Journal of Nanomanufacturing}, volume = {12}, unique-id = {26273819}, issn = {1746-9392}, year = {2016}, pages = {264-277} } @mastersthesis{MTMT:31650204, title = {Viiendat järku kaksik-kristalliseerunud nanotraatide deformatsiooni mehaanika}, url = {https://m2.mtmt.hu/api/publication/31650204}, author = {Mets, Magnus}, publisher = {University of Tartu}, unique-id = {31650204}, year = {2016} } @article{MTMT:26219914, title = {Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water}, url = {https://m2.mtmt.hu/api/publication/26219914}, author = {Park, Dong Woo and Bin, Ji Young and Hwang, Jehwan and Lee, Cheul-Ro and Lee, Sang Jun and Kim, Jun Oh and Noh, Sam Kyu and Oh, Seung Jae and Kim, Sang-Hoon and Jeon, Tae-In and Jeong, Kwang-Un and Kim, Jin Soo}, doi = {10.1038/srep36094}, journal-iso = {SCI REP}, journal = {SCIENTIFIC REPORTS}, volume = {6}, unique-id = {26219914}, issn = {2045-2322}, year = {2016}, eissn = {2045-2322} } @mastersthesis{MTMT:32552320, title = {Growth of Narrow Band Gap Semiconductor Nanowires on Silicon and Graphitic substrates by Droplet Epitaxy}, url = {https://m2.mtmt.hu/api/publication/32552320}, isbn = {9798691296710}, author = {Anyebe, Ezekiel Anyebe}, publisher = {Lancaster University}, unique-id = {32552320}, year = {2015} } @mastersthesis{MTMT:33730542, title = {Silicon nanowires: Monolithic fabrication in thick silicon layers and nanomechanical testing}, url = {https://m2.mtmt.hu/api/publication/33730542}, author = {Taşdemir, Zühal}, publisher = {Koç Üniversitesi}, unique-id = {33730542}, year = {2015} } @article{MTMT:23850269, title = {Measuring surface state density and energy distribution in InAs nanowires}, url = {https://m2.mtmt.hu/api/publication/23850269}, author = {Halpern, Eliezer and Cohen, Gilad and Gross, Shahar and Henning, Alexander and Matok, Max and Kretinin, Andrey V and Shtrikman, Hadas and Rosenwaks, Yossi}, doi = {10.1002/pssa.201300302}, journal-iso = {PHYS STATUS SOLIDI A-APPL MAT SCI}, journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, volume = {211}, unique-id = {23850269}, issn = {1862-6300}, year = {2014}, eissn = {1862-6319}, pages = {473-482} } @article{MTMT:23850268, title = {Mechanical properties of individual InAs nanowires studied by tensile tests}, url = {https://m2.mtmt.hu/api/publication/23850268}, author = {Li, X and Wei, X L and Xu, T T and Ning, Z Y and Shu, J P and Wang, X Y and Pan, D and Zhao, J H and Yang, T and Chen, Q}, doi = {10.1063/1.4868133}, journal-iso = {APPL PHYS LETT}, journal = {APPLIED PHYSICS LETTERS}, volume = {104}, unique-id = {23850268}, issn = {0003-6951}, year = {2014}, eissn = {1077-3118} } @article{MTMT:2762230, title = {Morphology and crystallinity control of wet chemically grown ZnO nanorods}, url = {https://m2.mtmt.hu/api/publication/2762230}, author = {Volk, János and Erdélyi, Róbert}, doi = {10.3906/fiz-1405-12}, journal-iso = {TURKISH J PHYS}, journal = {TURKISH JOURNAL OF PHYSICS}, volume = {38}, unique-id = {2762230}, issn = {1300-0101}, abstract = {The controlled growth of ZnO nanorods on technologically relevant substrates is essential for their practical integration into next generation optoelectronic and piezoelectric devices. In this report, highly ordered and uniform vertical ZnO nanorod arrays were synthesized using a facile, low temperature selective area wet chemical growth process. The nanorods were grown through nucleation windows that were patterned in a PMMA mask using electron beam lithography. At first, the technique was demonstrated on 'ideal' ZnO single crystal substrates, where the geometrical parameters of the highly uniform and crystallographically coherent nanorods were dictated by the nucleation pattern, the polarity of the substrate, and the growth conditions. The obtained geometry was then compared to 4 further arrays corresponding to different ZnO seed layers deposited on Si and sapphire substrates. Scanning electron microscopy showed that the crystal orientation and the alignment of the nanorods were determined by the underlying seed layer. The piezoresponse force microscopy revealed that the d(33) piezoelectric tensor component of the wet chemically grown nanorods was comparable (6-12 pm/V) to that of the highest value measured on ZnO single crystal (12.4 pm/V). The presented nanorod arrays have several potential applications, from nanorod based light emitting devices to CMOS compatible piezoelectric nanoforce sensors.}, year = {2014}, eissn = {1303-6122}, pages = {391-398}, orcid-numbers = {Volk, János/0000-0003-3633-6190; Erdélyi, Róbert/0000-0003-0202-4084} }