TY - JOUR AU - Bassotto, Luana Campagnolo AU - da Silva, Ivana Zanella AU - dos Santos, Claudia Lange TI - The role of the surface passivation in the mechanical properties of wurtzite InAs and InP nanowires: first-principles calculations JF - EUROPEAN PHYSICAL JOURNAL PLUS J2 - EUR PHYS J PLUS VL - 137 PY - 2022 IS - 10 PG - 6 SN - 2190-5444 DO - 10.1140/epjp/s13360-022-03329-8 UR - https://m2.mtmt.hu/api/publication/33183761 ID - 33183761 AB - We investigate the effect of surface passivation on the mechanical properties of InAs and InP nanowires (NWs) as a function of diameter using density-functional theory. The unpassivated and pseudohydrogen-passivated NWs are aligned along the [0001] direction of the wurtzite structure and have diameters ranging from 1 to 3 nm, approximately. The equilibrium lattice parameters of the NWs are seen to decrease with decreasing diameter, this reduction being more pronounced for the unpassivated NWs. Moreover, for similar diameters, the equilibrium lattice parameters of the unpassivated NWs, due to the radial expansion of As/P atoms on the surface region, are smaller than that for the pseudohydrogen-passivated NWs. The Young's modulus of the unpassivated InAs and InP NWs increases as the diameter decreases while that for the pseudohydrogen-passivated NWs an opposite trend was observed. The Poisson's ratio of the studied NWs, on the other hand, increases with decreasing diameters, and the calculated values for this quantity are almost three times larger for the unpassivated NWs when compared to that of the pseudohydrogen-passivated NWs. This shows that the surface passivation in [0001] WZ InAs and InP NWs has a crucial role in the understanding of the mechanical properties of these systems at nanometric sizes. LA - English DB - MTMT ER - TY - JOUR AU - Gandolfi, Marco AU - Peli, Simone AU - Diego, Michele AU - Danesi, Stefano AU - Giannetti, Claudio AU - Alessandri, Ivano AU - Zannier, Valentina AU - Demontis, Valeria AU - Rocci, Mirko AU - Beltram, Fabio AU - Sorba, Lucia AU - Roddaro, Stefano AU - Rossella, Francesco AU - Banfi, Francesco TI - Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties JF - JOURNAL OF PHYSICAL CHEMISTRY C J2 - J PHYS CHEM C VL - 126 PY - 2022 IS - 14 SP - 6361 EP - 6372 PG - 12 SN - 1932-7447 DO - 10.1021/acs.jpcc.2c01060 UR - https://m2.mtmt.hu/api/publication/32976934 ID - 32976934 AB - InAs nanowires are emerging as go-to materials in avariety of applications ranging from optoelectronics to nano-electronics, yet a consensus on their mechanical properties is stilllacking. The mechanical properties of wurtzite InAs nanowires arehere investigated via a multitechnique approach, exploitingelectron microscopies, ultrafast photoacoustics, andfinite elementsimulations. A benchmarked elastic matrix is provided and a Youngmodulus of 97 GPa is obtained, thus clarifying the debated issue ofInAs NW elastic properties. The validity of the analyticalapproaches and approximations commonly adopted to retrievethe elastic properties from ultrafast spectroscopies is discussed.The mechanism triggering the oscillations is unveiled. Nanowireoscillations in this system arise from a sudden expansion of the supporting substrate rather than the nanowire itself. This mechanismconstitutes a new paradigm, being at variance with respect to the excitation mechanisms so far identified in ultrafast experiments onnanowires and on a plethora of nanosystems. The presentfindings are relevant in view of applications involving InAs nanowires,knowledge of their mechanical properties being crucial for any device engineering beyond a trial-and-error approach. The resultsbear generality beyond the specific case, the launching mechanism potentially encompassing a variety of systems serving as nano-optomechanical resonators. LA - English DB - MTMT ER - TY - JOUR AU - Kanne, Thomas AU - Olsteins, Dags AU - Marnauza, Mikelis AU - Vekris, Alexandros AU - Estrada Saldaña, Juan Carlos AU - Loric̀, Sara AU - Schlosser, Rasmus D. AU - Ross, Daniel AU - Csonka, Szabolcs AU - Grove-Rasmussen, Kasper AU - Nygård, Jesper TI - Double Nanowires for Hybrid Quantum Devices JF - ADVANCED FUNCTIONAL MATERIALS J2 - ADV FUNCT MATER VL - 32 PY - 2022 IS - 9 PG - 9 SN - 1616-301X DO - 10.1002/adfm.202107926 UR - https://m2.mtmt.hu/api/publication/32552315 ID - 32552315 AB - Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated. LA - English DB - MTMT ER - TY - JOUR AU - Volk, János AU - Radó, János AU - Baji, Zsófia AU - Erdélyi, Róbert TI - Mechanical Characterization of Two-Segment Free-Standing ZnO Nanowires Using Lateral Force Microscopy JF - NANOMATERIALS J2 - NANOMATERIALS-BASEL VL - 12 PY - 2022 IS - 23 PG - 14 SN - 2079-4991 DO - 10.3390/nano12234120 UR - https://m2.mtmt.hu/api/publication/33267730 ID - 33267730 AB - Mechanical characterization of quasi one-dimensional nanostructures is essential for the design of novel nanoelectromechanical systems. However, the results obtained on basic mechanical quantities, such as Young’s modulus and fracture strength, show significant standard deviation in the literature. This is partly because of diversity in the quality of the nanowire, and partly because of inappropriately performed mechanical tests and simplified mechanical models. Here we present orientation-controlled bending and fracture studies on wet chemically grown vertical ZnO nanowires, using lateral force microscopy. The lateral force signal of the atomic force microscope was calibrated by a diamagnetic levitation spring system. By acquiring the bending curves of 14 nanowires, and applying a two-segment mechanical model, an average bending modulus of 108 ± 17 GPa was obtained, which was 23% lower than the Young’s modulus of bulk ZnO in the [0001] direction. It was also found that the average fracture strain and stress inside the nanowire was above 3.1 ± 0.3 % and 3.3 ± 0.3 GPa, respectively. However, the fracture of the nanowires was governed by the quality of the nanowire/substrate interface. The demonstrated technique is a relatively simple and productive way for the accurate mechanical characterization of vertical nanowire arrays. LA - English DB - MTMT ER - TY - JOUR AU - Zhang, Leilei AU - Li, Xing AU - Cheng, Shaobo AU - Shan, Chongxin TI - Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures JF - MATERIALS J2 - MATERIALS VL - 15 PY - 2022 IS - 5 PG - 24 SN - 1996-1944 DO - 10.3390/ma15051917 UR - https://m2.mtmt.hu/api/publication/32976935 ID - 32976935 AB - III-V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure-property relationship of III-V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III-V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III-V NWs. Finally, the promising applications of III-V materials in the energy-storage field are introduced. LA - English DB - MTMT ER - TY - THES AU - Hill, Megan O TI - Total Tomography of III-As Nanowire Emitters: Atom Probe Tomography and X-Ray Imaging of Nanowire Heterostructures PB - Northwestern University Evanston PY - 2020 SP - 213 SN - 9798698574415 UR - https://m2.mtmt.hu/api/publication/31903621 ID - 31903621 LA - English DB - MTMT ER - TY - JOUR AU - Calahorra, Y AU - Kar-Narayan, S TI - Piezoelectricity in non-nitride III-V nanowires: Challenges and opportunities JF - JOURNAL OF MATERIALS RESEARCH J2 - J MATER RES VL - 33 PY - 2018 IS - 6 SP - 611 EP - 624 PG - 14 SN - 0884-2914 DO - 10.1557/jmr.2018.29 UR - https://m2.mtmt.hu/api/publication/27392273 ID - 27392273 LA - English DB - MTMT ER - TY - JOUR AU - Choi, S AU - Lee, JH AU - Pin, MW AU - Jang, DW AU - Hong, SG AU - Cho, B AU - Lee, SJ AU - Jeong, JS AU - Yi, SH AU - Kim, YH TI - Study on fracture behavior of individual InAs nanowires using an electron-beam-drilled notch JF - RSC ADVANCES J2 - RSC ADV VL - 7 PY - 2017 IS - 27 SP - 16655 EP - 16661 PG - 7 SN - 2046-2069 DO - 10.1039/c7ra01117b UR - https://m2.mtmt.hu/api/publication/26672886 ID - 26672886 LA - English DB - MTMT ER - TY - JOUR AU - Li, X AU - Wei, X AU - Chen, Q TI - In-situ environmental scanning electron microscopy for probing the properties of advanced energy materials JF - International Journal of Nanomanufacturing J2 - International Journal of Nanomanufacturing VL - 12 PY - 2016 IS - 3-4 SP - 264 EP - 277 PG - 14 SN - 1746-9392 DO - 10.1504/IJNM.2016.079214 UR - https://m2.mtmt.hu/api/publication/26273819 ID - 26273819 LA - English DB - MTMT ER - TY - THES AU - Mets, Magnus TI - Viiendat järku kaksik-kristalliseerunud nanotraatide deformatsiooni mehaanika PB - Tartu Ülikool PY - 2016 SP - 42 UR - https://m2.mtmt.hu/api/publication/31650204 ID - 31650204 LA - Estonian DB - MTMT ER - TY - JOUR AU - Park, Dong Woo AU - Bin, Ji Young AU - Hwang, Jehwan AU - Lee, Cheul-Ro AU - Lee, Sang Jun AU - Kim, Jun Oh AU - Noh, Sam Kyu AU - Oh, Seung Jae AU - Kim, Sang-Hoon AU - Jeon, Tae-In AU - Jeong, Kwang-Un AU - Kim, Jin Soo TI - Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 6 PY - 2016 PG - 9 SN - 2045-2322 DO - 10.1038/srep36094 UR - https://m2.mtmt.hu/api/publication/26219914 ID - 26219914 LA - English DB - MTMT ER - TY - THES AU - Anyebe, Ezekiel Anyebe TI - Growth of Narrow Band Gap Semiconductor Nanowires on Silicon and Graphitic substrates by Droplet Epitaxy PB - Lancaster University PY - 2015 SP - 182 SN - 9798691296710 UR - https://m2.mtmt.hu/api/publication/32552320 ID - 32552320 LA - English DB - MTMT ER - TY - THES AU - Taşdemir, Zühal TI - Silicon nanowires: Monolithic fabrication in thick silicon layers and nanomechanical testing PB - Koc University PY - 2015 SP - 96 UR - https://m2.mtmt.hu/api/publication/33730542 ID - 33730542 LA - English DB - MTMT ER - TY - JOUR AU - Halpern, Eliezer AU - Cohen, Gilad AU - Gross, Shahar AU - Henning, Alexander AU - Matok, Max AU - Kretinin, Andrey V AU - Shtrikman, Hadas AU - Rosenwaks, Yossi TI - Measuring surface state density and energy distribution in InAs nanowires JF - PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE J2 - PHYS STATUS SOLIDI A-APPL MAT SCI VL - 211 PY - 2014 IS - 2 SP - 473 EP - 482 PG - 10 SN - 1862-6300 DO - 10.1002/pssa.201300302 UR - https://m2.mtmt.hu/api/publication/23850269 ID - 23850269 LA - English DB - MTMT ER - TY - JOUR AU - Li, X AU - Wei, X L AU - Xu, T T AU - Ning, Z Y AU - Shu, J P AU - Wang, X Y AU - Pan, D AU - Zhao, J H AU - Yang, T AU - Chen, Q TI - Mechanical properties of individual InAs nanowires studied by tensile tests JF - APPLIED PHYSICS LETTERS J2 - APPL PHYS LETT VL - 104 PY - 2014 IS - 10 PG - 4 SN - 0003-6951 DO - 10.1063/1.4868133 UR - https://m2.mtmt.hu/api/publication/23850268 ID - 23850268 LA - English DB - MTMT ER - TY - JOUR AU - Volk, János AU - Erdélyi, Róbert TI - Morphology and crystallinity control of wet chemically grown ZnO nanorods JF - TURKISH JOURNAL OF PHYSICS J2 - TURKISH J PHYS VL - 38 PY - 2014 IS - 3 SP - 391 EP - 398 PG - 8 SN - 1300-0101 DO - 10.3906/fiz-1405-12 UR - https://m2.mtmt.hu/api/publication/2762230 ID - 2762230 N1 - Funding Agency and Grant Number: PiezoMAT ("High-resolution fingerprint sensing with vertical piezoelectric nanowire MATrices") FP7 small- or medium-scale focused research grant; Hungarian-American Enterprise Scholarship Fund (HAESF) Funding text: This work was supported by a PiezoMAT ("High-resolution fingerprint sensing with vertical piezoelectric nanowire MATrices") FP7 small- or medium-scale focused research grant. JV acknowledges the support of the Hungarian-American Enterprise Scholarship Fund (HAESF). AB - The controlled growth of ZnO nanorods on technologically relevant substrates is essential for their practical integration into next generation optoelectronic and piezoelectric devices. In this report, highly ordered and uniform vertical ZnO nanorod arrays were synthesized using a facile, low temperature selective area wet chemical growth process. The nanorods were grown through nucleation windows that were patterned in a PMMA mask using electron beam lithography. At first, the technique was demonstrated on 'ideal' ZnO single crystal substrates, where the geometrical parameters of the highly uniform and crystallographically coherent nanorods were dictated by the nucleation pattern, the polarity of the substrate, and the growth conditions. The obtained geometry was then compared to 4 further arrays corresponding to different ZnO seed layers deposited on Si and sapphire substrates. Scanning electron microscopy showed that the crystal orientation and the alignment of the nanorods were determined by the underlying seed layer. The piezoresponse force microscopy revealed that the d(33) piezoelectric tensor component of the wet chemically grown nanorods was comparable (6-12 pm/V) to that of the highest value measured on ZnO single crystal (12.4 pm/V). The presented nanorod arrays have several potential applications, from nanorod based light emitting devices to CMOS compatible piezoelectric nanoforce sensors. LA - English DB - MTMT ER -