@article{MTMT:30529764,
	title = {Investigation of defects in crystalline silicon solar cells by confocal Raman spectroscopy},
	url = {https://m2.mtmt.hu/api/publication/30529764},
	author = {Osayemwenre, Gilbert O. and Meyer, Edson L. and Taziwa, Raymond},
	doi = {10.1177/0958305X18781923},
	journal-iso = {ENERG ENVIRON-UK},
	journal = {ENERGY AND ENVIRONMENT},
	volume = {29},
	unique-id = {30529764},
	issn = {0958-305X},
	abstract = {Defects in solar cells can be caused during processing or through a benign event like a falling leaf when operating in an outdoor system. Shading caused by such a leaf can result in the cell operating in the reverse direction and ultimately in hotspot formation, which in turn can cause the entire cell to breakdown and essentially become a power dissipator rather than a producer. More often than not, this reverse biasing of the cell will enhance the effect of any inherent defect. In this study, poly-Si cells were reverse biased to enhance the effect of their inherent defect. These defects were then analysed using non-destructive confocal Raman spectroscopy, since this technique allows us to observe small defects in cells/material using the intensity of the transverse optic bands. The intensity of defect-induced Raman band has a direct relationship with the observed morphological defects of the reverse biased cell. The quality of the active layer was also investigated; this includes the chemical composition and the stress level which can be found through the single spectrum bandwidth. The efficiency of solar material depends on the absorption capability of the solar material, while the optical and the electrical properties to a large extent determine the absorption capability of solar cell. However, its structure, defect and stress level can offset the total optical and electronic properties. The present study reveals defect in micro-level and the stress induced in the affected region of the solar cell. Confocal Raman is suitable for characterising stresses in relation to microstructure, defect level as well as the manufacturer-induced defect in the substrate.},
	keywords = {IMPURITIES; Affected region; outside the affected region; poly-Si; Raman peak; transverse optic bands},
	year = {2018},
	eissn = {2048-4070},
	pages = {1525-1533},
	orcid-numbers = {Taziwa, Raymond/0000-0002-5374-6223}
}

@article{MTMT:25845827,
	title = {Large-Scale Computations in Chemistry: A Bird's Eye View of a Vibrant Field},
	url = {https://m2.mtmt.hu/api/publication/25845827},
	author = {Akimov, Alexey V and Prezhdo, Oleg V},
	doi = {10.1021/cr500524c},
	journal-iso = {CHEM REV},
	journal = {CHEMICAL REVIEWS},
	volume = {115},
	unique-id = {25845827},
	issn = {0009-2665},
	year = {2015},
	eissn = {1520-6890},
	pages = {5797-5890}
}

@article{MTMT:24360522,
	title = {Improved Photovoltaic Properties of Heterojunction Carbon Based Solar Cell},
	url = {https://m2.mtmt.hu/api/publication/24360522},
	author = {Adhikari, Sudip and Kayastha, MS and Ghimire, DC and Aryal, HR and Adhikary, S and Takeuchi, T and Murakami, K and Kawashimo, Y and Uchida, H and Wakita, K},
	journal-iso = {Journal of Surface Engineered Materials and Advanced Technology},
	journal = {Journal of Surface Engineered Materials and Advanced Technology},
	volume = {3},
	unique-id = {24360522},
	issn = {2161-489X},
	year = {2013}
}

@inproceedings{MTMT:22809853,
	title = {Enhanced photovoltaic properties of a-C/Si heterojunction solar cellsEnhanced photovoltaic properties of a-C/Si heterojunction solar cells},
	url = {https://m2.mtmt.hu/api/publication/22809853},
	author = {Adhikari, S and Ghimire, DC and Adhikary, S and Uchida, H and Wakita, K and Umeno, M},
	booktitle = {38th IEEE Photovoltaic Specialists Conference, PVSC 2012},
	doi = {10.1109/PVSC.2012.6318102},
	unique-id = {22809853},
	year = {2012},
	pages = {2500-2503}
}

@inproceedings{MTMT:21591496,
	title = {Comparison of Photoresponse Characteristics between Nitrogen and Phosphorous Doped n-C/p-Si Heterostructure},
	url = {https://m2.mtmt.hu/api/publication/21591496},
	author = {Rasin, Ahmed Tasnim and Mominuzzarnan, Sharif Mohammad and IEEE},
	booktitle = {International Conference on Electrical and Computer Engineering, ICECE 2008.},
	doi = {10.1109/ICECE.2008.4769328},
	unique-id = {21591496},
	year = {2008},
	pages = {842-845}
}

@article{MTMT:24157551,
	title = {Synthesis and characterization of high voltage electrodeposited phosphorus doped DLC films},
	url = {https://m2.mtmt.hu/api/publication/24157551},
	author = {Wan, SH and Hu, HY and Chen, G and Zhang, JY},
	doi = {10.1016/j.elecom.2008.01.003},
	journal-iso = {ELECTROCHEM COMMUN},
	journal = {ELECTROCHEMISTRY COMMUNICATIONS},
	volume = {10},
	unique-id = {24157551},
	issn = {1388-2481},
	year = {2008},
	eissn = {1873-1902},
	pages = {461-465}
}

@article{MTMT:21591497,
	title = {Effect of phosphorus content on structural properties of phosphorus incorporated tetrahedral amorphous carbon films},
	url = {https://m2.mtmt.hu/api/publication/21591497},
	author = {Han, J C and Liu, A P and Zhu, J Q and Tan, M L and Wu, H P},
	doi = {10.1007/s00339-007-3938-4},
	journal-iso = {APPL PHYS A-MATER},
	journal = {APPLIED PHYSICS A - MATERIALS SCIENCE AND PROCESSING},
	volume = {88},
	unique-id = {21591497},
	issn = {0947-8396},
	year = {2007},
	eissn = {1432-0630},
	pages = {341-345}
}

@article{MTMT:21591502,
	title = {Boron-doped hydrogenated amorphous carbon films grown by surface-wave mode microwave plasma chemical vapor deposition},
	url = {https://m2.mtmt.hu/api/publication/21591502},
	author = {Adhikari, Sudip and Ghimire, Dilip C and Aryal, Hare Ram and Adhikary, Sunil and Uchida, Hideo and Umeno, Masayoshi},
	doi = {10.1016/j.diamond.2006.07.022},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {15},
	unique-id = {21591502},
	issn = {0925-9635},
	year = {2006},
	eissn = {1879-0062},
	pages = {1909-1912}
}

@article{MTMT:21591498,
	title = {Rearrangements of sp(2)/sp(3) hybridized bonding with phosphorus incorporation in pulsed laser deposited semiconducting carbon films by X-ray photoelectron spectroscopic analysis},
	url = {https://m2.mtmt.hu/api/publication/21591498},
	author = {Mominuzzaman, Sharif Mohammad and Alam, Mahbub and Soga, Tetsuo and Jimbo, Takashi},
	doi = {10.1016/j.diamond.2006.08.003},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {15},
	unique-id = {21591498},
	issn = {0925-9635},
	year = {2006},
	eissn = {1879-0062},
	pages = {1795-1798}
}

@article{MTMT:21591499,
	title = {Properties of an n-C : P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature},
	url = {https://m2.mtmt.hu/api/publication/21591499},
	author = {Rusop, M and Soga, T and Jimbo, T},
	doi = {10.1016/j.solmat.2005.03.016},
	journal-iso = {SOL ENERG MAT SOL C},
	journal = {SOLAR ENERGY MATERIALS AND SOLAR CELLS},
	volume = {90},
	unique-id = {21591499},
	issn = {0927-0248},
	year = {2006},
	eissn = {1879-3398},
	pages = {291-300}
}

@article{MTMT:21591501,
	title = {Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD},
	url = {https://m2.mtmt.hu/api/publication/21591501},
	author = {Rusop, Mohamad and Soga, Tetsuo and Jimbo, Takashi},
	doi = {10.1016/j.solmat.2006.06.017},
	journal-iso = {SOL ENERG MAT SOL C},
	journal = {SOLAR ENERGY MATERIALS AND SOLAR CELLS},
	volume = {90},
	unique-id = {21591501},
	issn = {0927-0248},
	year = {2006},
	eissn = {1879-3398},
	pages = {3214-3222}
}

@article{MTMT:21591500,
	title = {Photovoltaic properties of n-C : P/p-Si cells deposited by XeCl eximer laser using graphite target},
	url = {https://m2.mtmt.hu/api/publication/21591500},
	author = {Rusop, Mohamad and Mominuzzaman, Shariff M and Soga, Tetsuo and Jimbo, Takashi and Umeno, M},
	doi = {10.1016/j.solmat.2006.06.018},
	journal-iso = {SOL ENERG MAT SOL C},
	journal = {SOLAR ENERGY MATERIALS AND SOLAR CELLS},
	volume = {90},
	unique-id = {21591500},
	issn = {0927-0248},
	year = {2006},
	eissn = {1879-3398},
	pages = {3205-3213}
}

@article{MTMT:21591511,
	title = {Bonding properties and temperature dependence characteristic of amorphous carbon nitride thin films prepared by pulsed laser deposition for solar cell applications},
	url = {https://m2.mtmt.hu/api/publication/21591511},
	author = {Rusop, M and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1142/S0217984905008098},
	journal-iso = {MOD PHYS LETT B},
	journal = {MODERN PHYSICS LETTERS B},
	volume = {19},
	unique-id = {21591511},
	issn = {0217-9849},
	year = {2005},
	eissn = {1793-6640},
	pages = {99-112}
}

@article{MTMT:21591510,
	title = {Characteristics of phosphorus-doped amorphous carbon films grown by rf plasma-enhanced CVD with a novel phosphorus solid target},
	url = {https://m2.mtmt.hu/api/publication/21591510},
	author = {Rusop, M and Adachi, M and Soga, T and Jimbo, T},
	doi = {10.1142/S0218625X05006731},
	journal-iso = {SURF REV LETT},
	journal = {SURFACE REVIEW AND LETTERS},
	volume = {12},
	unique-id = {21591510},
	issn = {0218-625X},
	year = {2005},
	eissn = {1793-6667},
	pages = {19-25}
}

@article{MTMT:21591509,
	title = {Electronic doping of amorphous carbon thin films},
	url = {https://m2.mtmt.hu/api/publication/21591509},
	author = {Rusop, M and Soga, T and Jimbo, T and Umeno, M and Sharon, M},
	doi = {10.1142/S0218625X05007463},
	journal-iso = {SURF REV LETT},
	journal = {SURFACE REVIEW AND LETTERS},
	volume = {12},
	unique-id = {21591509},
	issn = {0218-625X},
	year = {2005},
	eissn = {1793-6667},
	pages = {579-586}
}

@article{MTMT:25698315,
	title = {Nitrogen doped n-type amorphous carbon films obtained by pulsed laser deposition with a natural camphor source target for solar cell applications},
	url = {https://m2.mtmt.hu/api/publication/25698315},
	author = {Rusop, M and Mominuzzaman, SM and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1088/0953-8984/17/12/016},
	journal-iso = {J PHYS CONDENS MAT},
	journal = {JOURNAL OF PHYSICS-CONDENSED MATTER},
	volume = {17},
	unique-id = {25698315},
	issn = {0953-8984},
	year = {2005},
	eissn = {1361-648X},
	pages = {1929-1946}
}

@article{MTMT:21591507,
	title = {Photoelectrical properties of p-type and n-type electrical conductivity amorphous carbon thin films for application in economical carbon-based solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591507},
	author = {Rusop, M and Soga, T and Jimbo, T},
	doi = {10.1142/S0218625X05007219},
	journal-iso = {SURF REV LETT},
	journal = {SURFACE REVIEW AND LETTERS},
	volume = {12},
	unique-id = {21591507},
	issn = {0218-625X},
	year = {2005},
	eissn = {1793-6667},
	pages = {343-350}
}

@article{MTMT:10265728,
	title = {Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells},
	url = {https://m2.mtmt.hu/api/publication/10265728},
	author = {Rusop, M and Tian, XM and Mominuzzaman, SM and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1016/j.solener.2004.08.005},
	journal-iso = {SOL ENERGY},
	journal = {SOLAR ENERGY},
	volume = {78},
	unique-id = {10265728},
	issn = {0038-092X},
	year = {2005},
	eissn = {1471-1257},
	pages = {406-415}
}

@article{MTMT:21591505,
	title = {Physical and microstructural properties of radio-frequency plasma-enhanced chemical vapor deposition grown n-type phosphorus doped amorphous carbon films on the contribution to carbon-based solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591505},
	author = {Rusop, M and Ebisu, H and Adachi, M and Soga, T and Jim, T},
	doi = {10.1143/JJAP.44.6124},
	journal-iso = {JPN J APPL PHYS 1},
	journal = {JAPANESE JOURNAL OF APPLIED PHYSICS PART 1},
	volume = {44},
	unique-id = {21591505},
	issn = {0021-4922},
	year = {2005},
	eissn = {1347-4065},
	pages = {6124-6130}
}

@article{MTMT:21591504,
	title = {Structural, bonding and physical characteristics of phosphorus-dopcd hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition},
	url = {https://m2.mtmt.hu/api/publication/21591504},
	author = {Rusop, M and Soga, T and Jimbo, T},
	doi = {10.1016/j.tsf.2004.11.138},
	journal-iso = {THIN SOLID FILMS},
	journal = {THIN SOLID FILMS},
	volume = {482},
	unique-id = {21591504},
	issn = {0040-6090},
	year = {2005},
	eissn = {1879-2731},
	pages = {280-286}
}

@article{MTMT:21591503,
	title = {The physical properties of xecl excimer pulsed laser deposited n-C : P/p-Si photovoltaic solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591503},
	author = {Rusop, M and Soga, T and Jimbo, T},
	doi = {10.1142/S0218625X05006895},
	journal-iso = {SURF REV LETT},
	journal = {SURFACE REVIEW AND LETTERS},
	volume = {12},
	unique-id = {21591503},
	issn = {0218-625X},
	year = {2005},
	eissn = {1793-6667},
	pages = {167-172}
}

@article{MTMT:24157548,
	title = {Pulsed Laser Deposited Amorphous Carbon Nitride Films for Solar Cell Applications},
	url = {https://m2.mtmt.hu/api/publication/24157548},
	author = {M, Rusop and S M, Mominuzzaman and T, Soga and T, Jimbo and M, Umeno},
	volume = {5},
	unique-id = {24157548},
	year = {2004},
	pages = {309-325}
}

@article{MTMT:21591513,
	title = {Contribution of n-type amorphous carbon on the fabrication of n-C : P/p-Si solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591513},
	author = {Rusop, M and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1142/S0218625X04006578},
	journal-iso = {SURF REV LETT},
	journal = {SURFACE REVIEW AND LETTERS},
	volume = {11},
	unique-id = {21591513},
	issn = {0218-625X},
	year = {2004},
	eissn = {1793-6667},
	pages = {569-575}
}

@article{MTMT:21591512,
	title = {Defect studies and photoelectrical properties of phosphorus doped amorphous carbon films},
	url = {https://m2.mtmt.hu/api/publication/21591512},
	author = {Rusop, M and Soga, T and Jimbo, I},
	doi = {10.1016/j.diamond.2004.06.007},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {13},
	unique-id = {21591512},
	issn = {0925-9635},
	year = {2004},
	eissn = {1879-0062},
	pages = {2197-2202}
}

@CONFERENCE{MTMT:21591515,
	title = {Characteristics of n-C : P/p-Si heterojunction solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591515},
	author = {Rusop, M and Soga, T and Jimbo, T},
	booktitle = {3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C},
	unique-id = {21591515},
	year = {2003},
	pages = {192-195}
}

@article{MTMT:21591514,
	title = {Characterization of phosphorus-doped amorphous carbon and construction of n-carbon/p-silicon heterojunction solar cells},
	url = {https://m2.mtmt.hu/api/publication/21591514},
	author = {Rusop, M and Mominuzzaman, S M and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1143/JJAP.42.2339},
	journal-iso = {JPN J APPL PHYS 1},
	journal = {JAPANESE JOURNAL OF APPLIED PHYSICS PART 1},
	volume = {42},
	unique-id = {21591514},
	issn = {0021-4922},
	year = {2003},
	eissn = {1347-4065},
	pages = {2339-2344}
}

@book{MTMT:21591544,
	title = {Advances in Amorphous Semiconductors},
	url = {https://m2.mtmt.hu/api/publication/21591544},
	author = {Singh, J and Shimakawa, K},
	editor = {Sarma, d D and Kotliar, G and Tokur, Y},
	publisher = {Taylor & Francis Inc.},
	unique-id = {21591544},
	year = {2003}
}

@article{MTMT:21591517,
	title = {Diamond-like carbon by pulsed laser deposition from a camphoric carbon target: effect of phosphorus incorporation},
	url = {https://m2.mtmt.hu/api/publication/21591517},
	author = {Mominuzzaman, S M and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1016/S0925-9635(01)00439-3},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {10},
	unique-id = {21591517},
	issn = {0925-9635},
	year = {2001},
	eissn = {1879-0062},
	pages = {1839-1842}
}

@article{MTMT:21591516,
	title = {Phosphorus doping and defect studies of diamnond-like carbon films by pulsed laser deposition using camphoric carbon target},
	url = {https://m2.mtmt.hu/api/publication/21591516},
	author = {Mominuzzaman, S M and Ebisu, H and Soga, T and Jimbo, T and Umeno, M},
	doi = {10.1016/S0925-9635(00)00542-2},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {10},
	unique-id = {21591516},
	issn = {0925-9635},
	year = {2001},
	eissn = {1879-0062},
	pages = {984-988}
}

@article{MTMT:1103669,
	title = {Chemical Fragmentation in a Quantum Mechanical Treatment of Extended Covalent Systems},
	url = {https://m2.mtmt.hu/api/publication/1103669},
	author = {Náray-Szabó, Gábor},
	journal-iso = {RUSS J PHYS CHEM A+},
	journal = {RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A},
	volume = {74},
	unique-id = {1103669},
	issn = {0036-0244},
	abstract = {A review of applications of the concept of chemical fragmentation in the theory of molecular orbitals of large covalent systems is presented. The use of this concept makes it possible to vastly reduce the volume of computations. It is demonstrated that the use of standard molecular parameters, such as the topology or location and composition of the reaction center, substantially simplifies the construction of a reasonable initial wave function and, hence, the solution of the Schrodinger equation. Localized molecular orbitals provide a natural basis fur fragmentation and can be extended to describe large building blocks of a covalent system. Systems in which chemical changes are localized on a few atoms, while the others play the role of an electrostatic perturbation can be divided into an active site and an environment; this procedure constitutes the basis of quantum mechanics-molecular mechanics hybrid methods. A complete quantum mechanical treatment of large covalent systems can be performed within the framework of the fragment self-consistent method developed over the past two decades in our laboratory.},
	year = {2000},
	eissn = {1531-863X},
	pages = {34-39}
}

@article{MTMT:1103670,
	title = {Chemical Fragmentation in Quantum Mechanical Methods},
	url = {https://m2.mtmt.hu/api/publication/1103670},
	author = {Náray-Szabó, Gábor},
	doi = {10.1016/S0097-8485(99)00065-0},
	journal-iso = {COMPUT CHEM},
	journal = {COMPUTERS & CHEMISTRY},
	volume = {24},
	unique-id = {1103670},
	issn = {0097-8485},
	abstract = {We give a survey on the application of the chemical fragmentation concept in computer modelling of extended covalent systems. It will be stressed that information on molecular topology, as well as location and composition of the reaction centre allows the construction of a reasonable initial guess for the wave function and thus facilitates the solution of the Schrodinger equation. For systems, where the chemical changes are localised to a few atoms, while others play the role of essentially electrostatic perturbation, a partition into active site and environment is possible providing a background to hybrid quantum mechanical/molecular mechanical (QM/MM) methods. Full molecular orbital treatment of large covalent systems at the minimal basis, semiempirical level becomes possible in the frame of the fragment self-consistent field (FSCF) method which was developed in the past two decades in our laboratory. As an application, we discuss the hydride shift reaction step in xylose isomerase catalysis. (C)\ 2000 Elsevier Science Ltd. All rights reserved.},
	year = {2000},
	eissn = {1879-0763},
	pages = {287-294}
}

@article{MTMT:1710989,
	title = {Electronic structure of doped fourfold coordinated amorphous semiconductors. Midgap states in amorphous carbon},
	url = {https://m2.mtmt.hu/api/publication/1710989},
	author = {Kádas, Krisztina and Ferenczy, György},
	doi = {10.1016/S0166-1280(98)00409-6},
	journal-iso = {J MOL STRUC-THEOCHEM},
	journal = {JOURNAL OF MOLECULAR STRUCTURE: THEOCHEM},
	volume = {463},
	unique-id = {1710989},
	issn = {0166-1280},
	year = {1999},
	eissn = {1872-7999},
	pages = {175-180},
	orcid-numbers = {Ferenczy, György/0000-0002-5771-4616}
}