TY - JOUR AU - Matsumoto, Takahiro AU - Nomata, Ikumi AU - Ohhara, Takashi AU - Kanemitsu, Yoshihiko TI - Determination of localized surface phonons in nanocrystalline silicon by inelastic neutron scattering spectroscopy and its application to deuterium isotope enrichment JF - PHYSICAL REVIEW MATERIALS J2 - PHYS REV MAT VL - 5 PY - 2021 IS - 6 PG - 9 SN - 2475-9953 DO - 10.1103/PhysRevMaterials.5.066003 UR - https://m2.mtmt.hu/api/publication/32226123 ID - 32226123 AB - The hydrogen (H) isotope deuterium (D) has attracted special interest for the manufacture of silicon (Si) semiconductors, Si microchips, and optical fibers, as well as for the synthesis of isotopically labeled compounds. However, the efficient production of D or H deuteride in a controlled manner is challenging, and rational H isotope enrichment protocols are still lacking. Here, we demonstrate a highly efficient exchange reaction from H to D on the surface of nanocrystalline Si (n-Si). Fourfold enrichment of D termination was successfully achieved by dipping n-Si into a dilute D solution. By determining the surface-localized vibrational modes for H- and D-terminated n-Si using inelastic neutron scattering spectroscopy, we found that the physical mechanism responsible for this enrichment originates from the difference in the zero-point oscillation energies and entropies of the surface-localized vibrations. Theoretically, the extent of enrichment could be greatly enhanced (similar to 15 times) using a gas-phase reaction. This enrichment protocol, which avoids the use of precious metal catalysts, opens the way for sustainable H-to-heavy H exchange reactions. LA - English DB - MTMT ER - TY - THES AU - Couret, Marine TI - Failure mechanisms implementation into SiGe HBT compact model operating close to safe operating area edges PB - Université de Bordeaux PY - 2020 SP - 162 UR - https://m2.mtmt.hu/api/publication/32513627 ID - 32513627 LA - English DB - MTMT ER - TY - JOUR AU - Harada, K. AU - Tanii, R. AU - Matsushima, H. AU - Ueda, M. AU - Sato, K. AU - Haneda, T. TI - Effects of water transport on deuterium isotope separation during polymer electrolyte membrane water electrolysis JF - INTERNATIONAL JOURNAL OF HYDROGEN ENERGY J2 - INT J HYDROGEN ENERG VL - 45 PY - 2020 IS - 56 SP - 31389 EP - 31395 PG - 7 SN - 0360-3199 DO - 10.1016/j.ijhydene.2020.08.256 UR - https://m2.mtmt.hu/api/publication/31920376 ID - 31920376 LA - English DB - MTMT ER - TY - JOUR AU - Kalem, S. TI - 1320 nm Light Source from Deuterium Treated Silicon JF - IEEE OPEN JOURNAL OF NANOTECHNOLOGY J2 - IEEE OPEN J NANOTECH VL - 1 PY - 2020 SP - 88 EP - 94 PG - 7 SN - 2644-1292 DO - 10.1109/OJNANO.2020.3025167 UR - https://m2.mtmt.hu/api/publication/32513625 ID - 32513625 LA - English DB - MTMT ER - TY - JOUR AU - Matsushima, Hisayoshi AU - Sato, Hanako AU - Ueda, Mikito AU - Ito, Hiroshi TI - Communication-Deuterium Isotope Separation by Solid Polymer Electrolyte Water Electrolysis JF - JOURNAL OF THE ELECTROCHEMICAL SOCIETY J2 - J ELECTROCHEM SOC VL - 166 PY - 2019 IS - 10 SP - F566 EP - F568 PG - 3 SN - 0013-4651 DO - 10.1149/2.0071910jes UR - https://m2.mtmt.hu/api/publication/31014718 ID - 31014718 AB - Electrolytic deuterium (D) separation from protium-containing solution has been investigated. Proton (PEM) and anion exchange membrane (AEM) electrolysis were performed at constant current. The mass analysis of hydrogen gas and water vapor was carried out. For both PEM and AEM electrolysis, the D concentration in the evolved hydrogen gas was lower than that of the initial electrolytic solution. The D concentration in the water vapor was unchanged by PEM electrolysis, but was increased by AEM. The separation factor of PEM was smaller than that of AEM, which was attributed to the humidification state on platinum catalyst. (C) 2019 The Electrochemical Society. LA - English DB - MTMT ER - TY - THES AU - Battistig, Gábor TI - Határfelületi jelenségek félvezetőkben PY - 2017 SP - 103 UR - https://m2.mtmt.hu/api/publication/26655556 ID - 26655556 LA - English DB - MTMT ER - TY - PAT AU - Kalem, S TI - Methods for producing new silicon light source and devices CY - Country:10017(13) PY - 2016 UR - https://m2.mtmt.hu/api/publication/25912333 ID - 25912333 LA - English DB - MTMT ER - TY - JOUR AU - Suzuki, Y AU - Kurokawa, Y AU - Suzuki, T AU - Kanda, K AU - Niibe, M AU - Nakano, M AU - Ohtake, N AU - Akasaka, H TI - Structure and physical properties of stable isotopic amorphous carbon films JF - DIAMOND AND RELATED MATERIALS J2 - DIAM RELAT MATER VL - 63 PY - 2016 SP - 115 EP - 119 PG - 5 SN - 0925-9635 DO - 10.1016/j.diamond.2015.10.024 UR - https://m2.mtmt.hu/api/publication/25564190 ID - 25564190 LA - English DB - MTMT ER - TY - JOUR AU - T, Lavrennko AU - K, Marzinzig AU - T, Walter AU - Plesz, Balázs AU - Ress, Sándor László TI - On the application of the vibrating Kelvin probe method for quality control of Cu(In,Ga)(Se,S)2 thin-film solar modules JF - PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS J2 - PROG PHOTOVOLTAICS VL - 24 PY - 2016 IS - 12 SP - 1554 EP - 1565 PG - 12 SN - 1062-7995 DO - 10.1002/pip.2746 UR - https://m2.mtmt.hu/api/publication/3030623 ID - 3030623 N1 - Ulm University of Applied Sciences, Albert-Einstein-Allee 55, Ulm, 89081, Germany Budapest University of Technology and Economics, Magyar tudósok körútja 2, Budapest, H-1117, Hungary Cited By :1 Export Date: 22 September 2022 CODEN: PPHOE Correspondence Address: Lavrenko, T.; Ulm University of Applied Sciences, Albert-Einstein-Allee 55, Germany; email: lavrenko@hs-ulm.de LA - English DB - MTMT ER - TY - JOUR AU - Gholizadeh, Arashti M AU - Sadeghzadeh, MA TI - Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer JF - VACUUM J2 - VACUUM VL - 101 PY - 2014 SP - 267 EP - 270 PG - 4 SN - 0042-207X DO - 10.1016/j.vacuum.2013.09.008 UR - https://m2.mtmt.hu/api/publication/23603297 ID - 23603297 N1 - Cited By :2 Export Date: 20 September 2022 CODEN: VACUA Correspondence Address: Sadeghzadeh, M.A.; Physics Department, P.O. Box 89195-741, Yazd, Iran; email: Msadeghzadeh@yazduni.ac.ir LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Czett, Andor TI - Characterization of 4H-SiC surfaces by non-destructive techniques based on capacitance voltage measurements JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 301 PY - 2014 SP - 19 EP - 23 PG - 5 SN - 0169-4332 DO - 10.1016/j.apsusc.2014.01.206 UR - https://m2.mtmt.hu/api/publication/2733856 ID - 2733856 N1 - Export Date: 20 September 2022 CODEN: ASUSE Correspondence Address: Mizsei, J.; Department of Electron Devices, Magyar tudósok körútja 2, Budapest H-1117, Hungary; email: mizsei@eet.bme.hu LA - English DB - MTMT ER - TY - JOUR AU - Arashti, MG AU - Sadeghzadeh, MA TI - Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis JF - VACUUM J2 - VACUUM VL - 93 PY - 2013 SP - 1 EP - 6 PG - 6 SN - 0042-207X DO - 10.1016/j.vacuum.2012.12.006 UR - https://m2.mtmt.hu/api/publication/23603293 ID - 23603293 LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Czett, Andor TI - Electrical characterization of surface and interface potentials on SiC JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 258 PY - 2012 IS - 21 SP - 8343 EP - 8348 PG - 6 SN - 0169-4332 DO - 10.1016/j.apsusc.2012.02.127 UR - https://m2.mtmt.hu/api/publication/2687217 ID - 2687217 N1 - Cited By :2 Export Date: 20 September 2022 CODEN: ASUSE Correspondence Address: Mizsei, J.; Department of Electron Devices, Goldmann György tér 3, Budapest, H-1521, Hungary; email: mizsei@eet.bme.hu LA - English DB - MTMT ER - TY - JOUR AU - Kim, YH AU - Jeong, MG AU - Seo, HO AU - Park, SY AU - Jeong, IB AU - Kim, KD AU - Cho, SM AU - Lim, DC AU - Kim, YD TI - Preparation of ultrathin polydimethylsiloxane-coating on Cu as oxidation-protection layer JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 258 PY - 2012 IS - 19 SP - 7562 EP - 7566 PG - 5 SN - 0169-4332 DO - 10.1016/j.apsusc.2012.04.087 UR - https://m2.mtmt.hu/api/publication/23603294 ID - 23603294 LA - English DB - MTMT ER -