TY  - JOUR
AU  - Abdulrazzaq, Ali Kareem
AU  - Bognár, György
AU  - Plesz, Balázs
TI  - Combined electro-thermal model for PV panels
JF  - POLLACK PERIODICA: AN INTERNATIONAL JOURNAL FOR ENGINEERING AND INFORMATION SCIENCES
J2  - POLLACK PERIODICA
VL  - 16
PY  - 2021
IS  - 1
SP  - 7
EP  - 13
PG  - 7
SN  - 1788-1994
DO  - 10.1556/606.2020.00145
UR  - https://m2.mtmt.hu/api/publication/31933543
ID  - 31933543
N1  - Department of Electron Devices, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, Magyar tudosok korutja 2, Budapest, H-1117, Hungary            
            Department of Electrical and Electronics Engineering, Thi-Qar University, P.O.B 0535, Nassiriya, 64001, Iraq            
            Export Date: 22 September 2022            
            Correspondence Address: Abdulrazzaq, A.K.; Department of Electron Devices, Magyar tudosok korutja 2, Hungary; email: ali.k.abdulrazzaq@edu.bme.hu
AB  - This paper presents a combined electro-thermal model to serve the aim of accurate output power prediction of photovoltaic systems, based on the concept of the thermal energy balance. The electrical sub-model is built based on fitting a surface to the current-voltage curves collected under wide range temperatures and irradiances. For this purpose, the current-voltage characteristic curves are reproduced using two different methods. The thermal sub-model considers all the effective heat transfer mechanisms to estimate the photovoltaic module junction temperature. The Newton-Raphson iterative method is used as a solving algorithm to calculate the photovoltaic junction temperature. The collected results prove the applicability of the model under a wide range of environmental conditions.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Pohl, László
AU  - Hantos, Gusztáv
AU  - Hegedüs, János
AU  - Németh, Márton
AU  - Kohári, Zsolt
AU  - Poppe, András
TI  - Mixed Detailed and Compact Multi-Domain Modeling to Describe CoB LEDs
JF  - ENERGIES
J2  - ENERGIES
VL  - 13
PY  - 2020
IS  - 16
PG  - 38
SN  - 1996-1073
DO  - 10.3390/en13164051
UR  - https://m2.mtmt.hu/api/publication/31395925
ID  - 31395925
AB  - Large area multi-chip LED devices, such as chip-on-board (CoB) LEDs, require the combined use of chip-level multi-domain compact LED models (Spice-like compact models) and the proper description of distributed nature of the thermal environment (the CoB substrate and phosphor) of the LED chips. In this paper, we describe such a new numerical solver that was specifically developed for this purpose. For chip-level, the multi-domain compact modeling approach of the Delphi4LED project is used. This chip-level model is coupled to a finite difference scheme based numerical solver that is used to simulate the thermal phenomena in the substrate and in the phosphor (heat transfer and heat generation). Besides solving the 3D heat-conduction problem, this new numerical simulator also tracks the propagation and absorption of the blue light emitted by the LED chips, as well as the propagation and absorption of the longer wavelength light that is converted by the phosphor from blue. Heat generation in the phosphor, due to conversion loss (Stokes shift), is also modeled. To validate our proposed multi-domain model of the phosphor, dedicated phosphor and LED package samples with known resin—phosphor powder ratios and known geometry were created. These samples were partly used to identify the nature of the temperature dependence of phosphor-conversion efficiency and were also used as simple test cases to “calibrate” and test the new numerical solver. With the models developed, combined simulation of the LED chip and the CoB substrate + phosphor for a known CoB LED device is shown, and the simulation results are compared to measurement results.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Pohl, László
AU  - Soma, Ur
AU  - Mizsei, János
TI  - Thermoelectrical modelling and simulation of devices based on VO2
JF  - MICROELECTRONICS RELIABILITY
J2  - MICROELECTRON RELIAB
VL  - 79
PY  - 2017
SP  - 387
EP  - 394
PG  - 8
SN  - 0026-2714
DO  - 10.1016/j.microrel.2017.03.027
UR  - https://m2.mtmt.hu/api/publication/3204967
ID  - 3204967
N1  - WoS:hiba:000417774400046 2020-08-29 11:08 cikkazonosító nem egyezik
AB  - Limits of development of conventional silicon-based integrated 
circuits get closer. More and more effort is done
to develop new devices for integrated circuits. A promising 
structure is based on the semiconductor-to-metal
phase change of vanadium-dioxide at about 67 °C. In these 
circuits the information is carried by combined thermal
and electrical currents. For device modelling and circuit 
design, accurate distributed electro-thermal transient
simulation is mandatory. This paper is the first one to 
present an electro-thermal transient simulation
method for VO2 devices operating in real-world conditions. The 
paper presents three VO2 material models, the
algorithmic extension of an electro-thermal field simulator to 
be able to handle hysteresis and the transient simulation
issues of VO2 and the modelling of VO2 based devices. The 
paper compares measured and simulated device
characteristics.
LA  - English
DB  - MTMT
ER  -