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The partial\npressure of O-2 varied from 100 to 1000 mbar, while the oxidation time\nranged from 0.5 to 45 h. The thickness of the oxide films was\ndetermined by spectroscopic ellipsometry and Rutherford backscattering\nspectrometry. The time and the pressure dependence of the oxidation\nkinetics of SiC are well described by the modified Deal-Grove model. In\nthe diffusion-limited region, even for the faster case, the oxidation\nkinetics of the C-terminated face of SiC is not clearly limited by\noxygen indiffusion, as for pure silicon. To interpret the ellipsometry\nspectra, two models of possible structure were used. In the case of the\none-layer model, for layer thicknesses above 30 nm, the refractive\nindex of the oxide layers is identical to that of thermally oxidized\nSi, and it increases rapidly with decreasing thickness below about 15\nnm. This increase is significantly larger for C-terminated than for\nSi-terminated faces, and this difference can be explained by a\ntransition layer introduced into the two-layer model. This model\ncontains a pure SiO2 layer and a transition layer modeled by a mixture\nof 50 % SiO2 and 50 % SiC. The transition layer is thicker on the\nC-terminated surface than on the Si-terminated one. The thickness ratio\nof the transition layers is slightly larger than the surface roughness\nratio on the two different sides determined by atomic force microscopy.\nThe density of the oxide films, which can be determined from the\nbackscattering and spectroscopic ellipsometry spectra, decreases with\ndecreasing thickness below about 30 nm. For thicker films, the density\nof the oxide is equal to the bulk density of SiO2. 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