TY  - JOUR
AU  - Pohl, László
AU  - Soma, Ur
AU  - Mizsei, János
TI  - Thermoelectrical modelling and simulation of devices based on VO2
JF  - MICROELECTRONICS RELIABILITY
J2  - MICROELECTRON RELIAB
VL  - 79
PY  - 2017
SP  - 387
EP  - 394
PG  - 8
SN  - 0026-2714
DO  - 10.1016/j.microrel.2017.03.027
UR  - https://m2.mtmt.hu/api/publication/3204967
ID  - 3204967
N1  - WoS:hiba:000417774400046 2020-08-29 11:08 cikkazonosító nem egyezik
AB  - Limits of development of conventional silicon-based integrated 
circuits get closer. More and more effort is done
to develop new devices for integrated circuits. A promising 
structure is based on the semiconductor-to-metal
phase change of vanadium-dioxide at about 67 °C. In these 
circuits the information is carried by combined thermal
and electrical currents. For device modelling and circuit 
design, accurate distributed electro-thermal transient
simulation is mandatory. This paper is the first one to 
present an electro-thermal transient simulation
method for VO2 devices operating in real-world conditions. The 
paper presents three VO2 material models, the
algorithmic extension of an electro-thermal field simulator to 
be able to handle hysteresis and the transient simulation
issues of VO2 and the modelling of VO2 based devices. The 
paper compares measured and simulated device
characteristics.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Nagy, Gergely
AU  - Horváth, Péter
AU  - Pohl, László
AU  - Poppe, András
TI  - Advancing the thermal stability of 3D ICs using logi-thermal simulation
JF  - MICROELECTRONICS JOURNAL
J2  - MICROELECTRON J
VL  - 46
PY  - 2015
IS  - 12, Part: A
SP  - 1114
EP  - 1120
PG  - 7
SN  - 0959-8324
DO  - 10.1016/j.mejo.2015.06.025
UR  - https://m2.mtmt.hu/api/publication/2908301
ID  - 2908301
N1  - Megjegyzés-25412368
Megjegyzés-26505942
PN A

Issue: 12, Part: A
WoS:hiba:000367859500003 2020-08-29 08:48 füzet nem egyezik
LA  - English
DB  - MTMT
ER  - 

TY  - CHAP
AU  - Mizsei, János
AU  - Jyrki, Lappalainen
AU  - Bein, Márton
ED  - Raad, P E
ED  - Kerecsen Istvánné Rencz, Márta
ED  - Wunderle, B
ED  - Poppe, András
TI  - Thermal-Electronic Integrated Logic
T2  - 19th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC 2013)
PB  - Institute of Electrical and Electronics Engineers (IEEE)
CY  - New York, New York
SN  - 9781479922710
PY  - 2013
SP  - 128
EP  - 134
PG  - 4
DO  - 10.1109/THERMINIC.2013.6675249
UR  - https://m2.mtmt.hu/api/publication/2698758
ID  - 2698758
N1  - Budapest University of Technology and Economics, Budapest, Hungary            
            University of Oulu, Finland            
            Cited By :11            
            Export Date: 21 September 2022            
            Correspondence Address: Mizsei, J.; Budapest University of Technology and Economics, Budapest, Hungary; email: mizsei@eet.bme.hu
LA  - English
DB  - MTMT
ER  - 

TY  - CHAP
AU  - Bein, Márton
AU  - Mizsei, János
ED  - Bernard, Courtois
ED  - Marta, Rencz
TI  - Contracting Current Paths in Vanadium Dioxide Thin Films
T2  - Proceedings of the 17th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'11)
PB  - EDA Publishing Association
CY  - Grenoble
SN  - 9781457707780
PY  - 2011
SP  - 66
EP  - 69
PG  - 4
UR  - https://m2.mtmt.hu/api/publication/2668775
ID  - 2668775
AB  - Vanadium dioxide (VO2) has been extensively investigated due to 
its thermal-induced metal-insulator transition (MIT) at about 67 
oC; which can be lowered by doping. During the transition from 
semiconductor to metallic phase electrical conductivity can 
increase by up to 3-4 orders of magnitude, while optical 
reflectance can drop by almost 50%. Possible applications 
include thermally controlled electrical and optical switches. As 
the thin film is conductive optical changes can be induced 
electrically by Joule-heating.
In this paper we present electro-optical measurements carried 
out on 100 nm thick VO2 thin films deposited on sapphire 
substrates. Phase transitions were electrically induced in 
contacted films and observed using an optical microscope. Strong 
spatial inhomogeneity has been detected: a few micron wide dark 
path connected the two contacts. The visible channel is a 
metallic area within the semiconducting film as the domain 
undergoes a MIT because of the Joule-heat of the flowing 
current.
The optically observable fine structure found suggests that VO2 
thin films could be used to visualize isotherms with a 
resolution of a few microns, similar to that of liquid crystals. 
Possible benefits include the simple and reliable use of the 
once deposited solid phase precision films and a higher 
resolution compared to liquid crystal thermography.
LA  - English
DB  - MTMT
ER  -