TY - JOUR AU - Székely, Vladimir AU - Poppe, András AU - Kerecsen Istvánné Rencz, Márta AU - Csendes, A AU - Páhi, A TI - Electro-thermal simulation: a realization by simultaneous iteration JF - MICROELECTRONICS JOURNAL J2 - MICROELECTRON J VL - 28 PY - 1997 IS - 3 SP - 247 EP - 262 PG - 16 SN - 0026-2692 DO - 10.1016/S0026-2692(96)00029-8 UR - https://m2.mtmt.hu/api/publication/2606976 ID - 2606976 AB - After a comparison of major strategies of electro-thermal simulation (the relaxation method and the method of simultaneous iteration) a detailed description of the fundamentals and realization issues of the simultaneous iteration method is given. The paper introduces the SISSSI electro-thermal simulation package which is a recent realization of the latter method, fully integrated into the Cadence Opus design framework. The use of the package as an analogue circuit layout design verification tool is demonstrated through a detailed case study. LA - English DB - MTMT ER - TY - CHAP AU - Székely, Vladimir AU - Páhi, A AU - Poppe, András AU - Kerecsen Istvánné Rencz, Márta AU - Csendes, A ED - IEEE, null TI - SISSSI - a tool for dynamic electro-thermal simulation of analog VLSI cells T2 - Proceedings of the European Design and Test Conference (ED&TC'97) PB - IEEE Press CY - New York, New York SN - 0818677864 PY - 1997 SP - 617 EP - 617 PG - 1 DO - 10.1109/EDTC.1997.582430 UR - https://m2.mtmt.hu/api/publication/2613548 ID - 2613548 AB - With the decreasing feature sizes and increasing packaging densities, thermal effects influence more and more the operation of integrated circuits. The accurate consideration of thermal effects while predicting the electrical behaviour of the ICs became crucial in case of high performance integrated circuits both for analog and digital ones. The SISSSI electro-thermal simulator family can be applied for the above purpose, both for analog and digital designs. The common feature of the SISSSI versions (SISSSI-Classic and SISSSI-Logitherm) is that they construct the layout based thermal model of the IC automatically and consider accurately the effect of the chip encapsulation as well. Here we present the developments in the SISSSI-Classic version which is aimed at device level (analog) electro-thermal simulation. LA - English DB - MTMT ER - TY - JOUR AU - Csendes, A AU - Székely, Vladimir AU - Kerecsen Istvánné Rencz, Márta TI - Thermal mapping with liquid crystal method JF - MICROELECTRONIC ENGINEERING J2 - MICROELECTRON ENG VL - 31 PY - 1996 IS - 1-4 SP - 281 EP - 290 PG - 10 SN - 0167-9317 DO - 10.1016/0167-9317(95)00350-9 UR - https://m2.mtmt.hu/api/publication/2606972 ID - 2606972 AB - Good resolution thermal mapping can be achieved by using liquid crystals. The article presents a new, high resolution automated measuring equipment, which executes the measurement and the evaluation process under computer control. The equipment was developed especially for micro-thermography of integrated circuits. The paper presents the practical aspects of the liquid crystal measuring method. Resolution and accuracy features of the method are also discussed. LA - English DB - MTMT ER - TY - CHAP AU - Székely, Vladimir AU - Poppe, András AU - Kerecsen Istvánné Rencz, Márta AU - Farkas, Gábor AU - Csendes, Alpár AU - Páhi, András ED - IEEE, null TI - An efficient method for the self-consistent electro-thermal simulation and its integration into a CAD framework T2 - Proceedings of the European Design and Test Conference (ED&TC'96) PB - IEEE Computer Society Press CY - Los Alamitos (CA) SN - 0818674237 PY - 1996 SP - 604 DO - 10.1109/EDTC.1996.494368 UR - https://m2.mtmt.hu/api/publication/29067 ID - 29067 LA - English DB - MTMT ER - TY - CONF AU - Székely, Vladimir AU - Kerecsen Istvánné Rencz, Márta AU - J. M., Karam AU - M., Lubaszewski AU - B., Courtois TI - Thermal monitoring of self-checking systems T2 - Proceedings of the 2nd IEEE International On-Line Testing Workshop (IOLTW'96) PY - 1996 SP - 6 EP - 12 PG - 7 UR - https://m2.mtmt.hu/api/publication/2608961 ID - 2608961 LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir AU - A., Csendes AU - Kerecsen Istvánné Rencz, Márta TI - μS-THERMANAL: an efficient thermal simulation tool for microsystem elements and MCMs JF - PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING J2 - PROCEEDINGS OF SPIE VL - 2880 PY - 1996 SP - 64 EP - 75 PG - 12 SN - 0277-786X DO - 10.1117/12.250968 UR - https://m2.mtmt.hu/api/publication/2607026 ID - 2607026 N1 - WoS:hiba:A1996BG36S00007 2022-07-19 08:55 típus nem egyezik AB - Integrated microsystems raise new problems in thermal simulation. The frequently used structures such as cantilevers, membranes have quite different heat transfer properties than the simple silicon cubes of conventional ICs. Furthermore numerous functions are realized on these structures based on thermal principle. Quick and correct thermal simulation of these structures is needed during the design process. The paper presents the (mu) S-THERMANAL thermal simulation tool which is capable to simulate cantilever, bridge etc. microsystem structures both in steady-state and in the frequency-domain case. The algorithms of the program, based on the Fourier method, are detailed in the paper and numerous examples illustrate the capabilities of the tool. LA - English DB - MTMT ER - TY - CHAP AU - Székely, Vladimir AU - Kerecsen Istvánné Rencz, Márta ED - IEEE, null TI - Thermal Test and Monitoring T2 - Proceedings of The European Design and Test Conference PB - IEEE Computer Society Press CY - Los Alamitos (CA) SN - 0818670398 PY - 1995 SP - 601 EP - 601 PG - 1 DO - 10.1109/EDTC.1995.470328 UR - https://m2.mtmt.hu/api/publication/2670966 ID - 2670966 LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir TI - On the representation of infinite-length distributed RC one-ports JF - IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II - ANALOG AND DIGITAL SIGNAL PROCESSING J2 - IEEE T CIRCUITS-II VL - 38 PY - 1991 IS - 7 SP - 711 EP - 719 PG - 9 SN - 1057-7130 DO - 10.1109/31.135743 UR - https://m2.mtmt.hu/api/publication/2670980 ID - 2670980 AB - The paper describes new representations of infinite distributed RC one-ports. Two new functions are introduced: the dipole intensity function (as the generalization of pole-zero pattern) and the time-constant density (as the generalization of the discrete time-constant set of a lumped network). Relations between the new representations and the complex impedance are presented. The use of the new representations is demonstrated by some examples. LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir AU - Poppe, András TI - Novel Tools for Thermal and Electrical Analysis of Circuits JF - ELECTROSOFT J2 - ELECTROSOFT VL - 1 PY - 1990 IS - 4 SP - 234 EP - 252 PG - 19 SN - 0269-9184 UR - https://m2.mtmt.hu/api/publication/2607102 ID - 2607102 LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir AU - Tran, van Bien TI - Fine structure of heat flow path in semiconductor devices: a measurement and identification method JF - SOLID-STATE ELECTRONICS J2 - SOLID STATE ELECTRON VL - 31 PY - 1988 IS - 9 SP - 1363 EP - 1368 PG - 6 SN - 0038-1101 DO - 10.1016/0038-1101(88)90099-8 UR - https://m2.mtmt.hu/api/publication/2670979 ID - 2670979 LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir TI - Accurate Calculation of Device Heat Dynamics: a Special Feature of the TRANZ-TRAN Circuit-Analysis Program JF - ELECTRONICS LETTERS J2 - ELECTRON LETT VL - 9 PY - 1973 IS - 6 SP - 132 EP - 134 PG - 3 SN - 0013-5194 UR - https://m2.mtmt.hu/api/publication/2667285 ID - 2667285 LA - English DB - MTMT ER - TY - JOUR AU - Székely, Vladimir AU - Tarnay, Kálmán TI - Accurate Algorithm for Temperature Calculation of Devices in Nonlinear-Circuit-Analysis Programs JF - ELECTRONICS LETTERS J2 - ELECTRON LETT VL - 8 PY - 1972 IS - 19 SP - 470 EP - 472 PG - 3 SN - 0013-5194 UR - https://m2.mtmt.hu/api/publication/2667284 ID - 2667284 LA - English DB - MTMT ER -