@article{MTMT:2606976,
	title = {Electro-thermal simulation: a realization by simultaneous iteration},
	url = {https://m2.mtmt.hu/api/publication/2606976},
	author = {Székely, Vladimir and Poppe, András and Kerecsen Istvánné Rencz, Márta and Csendes, A and Páhi, A},
	doi = {10.1016/S0026-2692(96)00029-8},
	journal-iso = {MICROELECTRON J},
	journal = {MICROELECTRONICS JOURNAL},
	volume = {28},
	unique-id = {2606976},
	issn = {0026-2692},
	abstract = {After a comparison of major strategies of electro-thermal simulation (the relaxation method and the method of simultaneous iteration) a detailed description of the fundamentals and realization issues of the simultaneous iteration method is given. The paper introduces the SISSSI electro-thermal simulation package which is a recent realization of the latter method, fully integrated into the Cadence Opus design framework. The use of the package as an analogue circuit layout design verification tool is demonstrated through a detailed case study.},
	year = {1997},
	eissn = {0959-8324},
	pages = {247-262},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:2613548,
	title = {SISSSI - a tool for dynamic electro-thermal simulation of analog VLSI cells},
	url = {https://m2.mtmt.hu/api/publication/2613548},
	author = {Székely, Vladimir and Páhi, A and Poppe, András and Kerecsen Istvánné Rencz, Márta and Csendes, A},
	booktitle = {Proceedings of the European Design and Test Conference (ED&TC'97)},
	doi = {10.1109/EDTC.1997.582430},
	unique-id = {2613548},
	abstract = {With the decreasing feature sizes and increasing packaging densities, thermal effects influence more and more the operation of integrated circuits. The accurate consideration of thermal effects while predicting the electrical behaviour of the ICs became crucial in case of high performance integrated circuits both for analog and digital ones. The SISSSI electro-thermal simulator family can be applied for the above purpose, both for analog and digital designs. The common feature of the SISSSI versions (SISSSI-Classic and SISSSI-Logitherm) is that they construct the layout based thermal model of the IC automatically and consider accurately the effect of the chip encapsulation as well. Here we present the developments in the SISSSI-Classic version which is aimed at device level (analog) electro-thermal simulation.},
	year = {1997},
	pages = {617-617},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@article{MTMT:2606972,
	title = {Thermal mapping with liquid crystal method},
	url = {https://m2.mtmt.hu/api/publication/2606972},
	author = {Csendes, A and Székely, Vladimir and Kerecsen Istvánné Rencz, Márta},
	doi = {10.1016/0167-9317(95)00350-9},
	journal-iso = {MICROELECTRON ENG},
	journal = {MICROELECTRONIC ENGINEERING},
	volume = {31},
	unique-id = {2606972},
	issn = {0167-9317},
	abstract = {Good resolution thermal mapping can be achieved by using liquid crystals. The article presents a new, high resolution automated measuring equipment, which executes the measurement and the evaluation process under computer control. The equipment was developed especially for micro-thermography of integrated circuits. The paper presents the practical aspects of the liquid crystal measuring method. Resolution and accuracy features of the method are also discussed.},
	year = {1996},
	eissn = {1873-5568},
	pages = {281-290},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:29067,
	title = {An efficient method for the self-consistent electro-thermal simulation and its integration into a CAD framework},
	url = {https://m2.mtmt.hu/api/publication/29067},
	author = {Székely, Vladimir and Poppe, András and Kerecsen Istvánné Rencz, Márta and Farkas, Gábor and Csendes, Alpár and Páhi, András},
	booktitle = {Proceedings of the European Design and Test Conference (ED&TC'96)},
	doi = {10.1109/EDTC.1996.494368},
	unique-id = {29067},
	year = {1996},
	pages = {604},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@CONFERENCE{MTMT:2608961,
	title = {Thermal monitoring of self-checking systems},
	url = {https://m2.mtmt.hu/api/publication/2608961},
	author = {Székely, Vladimir and Kerecsen Istvánné Rencz, Márta and J. M., Karam and M., Lubaszewski and B., Courtois},
	booktitle = {Proceedings of the 2nd IEEE International On-Line Testing Workshop (IOLTW'96)},
	unique-id = {2608961},
	year = {1996},
	pages = {6-12},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@article{MTMT:2607026,
	title = {μS-THERMANAL: an efficient thermal simulation tool for microsystem elements and MCMs},
	url = {https://m2.mtmt.hu/api/publication/2607026},
	author = {Székely, Vladimir and A., Csendes and Kerecsen Istvánné Rencz, Márta},
	doi = {10.1117/12.250968},
	journal-iso = {PROCEEDINGS OF SPIE},
	journal = {PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING},
	volume = {2880},
	unique-id = {2607026},
	issn = {0277-786X},
	abstract = {Integrated microsystems raise new problems in thermal simulation. The frequently used structures such as cantilevers, membranes have quite different heat transfer properties than the simple silicon cubes of conventional ICs. Furthermore numerous functions are realized on these structures based on thermal principle. Quick and correct thermal simulation of these structures is needed during the design process. The paper presents the (mu) S-THERMANAL thermal simulation tool which is capable to simulate cantilever, bridge etc. microsystem structures both in steady-state and in the frequency-domain case. The algorithms of the program, based on the Fourier method, are detailed in the paper and numerous examples illustrate the capabilities of the tool.},
	year = {1996},
	eissn = {1996-756X},
	pages = {64-75},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:2670966,
	title = {Thermal Test and Monitoring},
	url = {https://m2.mtmt.hu/api/publication/2670966},
	author = {Székely, Vladimir and Kerecsen Istvánné Rencz, Márta},
	booktitle = {Proceedings of The European Design and Test Conference},
	doi = {10.1109/EDTC.1995.470328},
	unique-id = {2670966},
	year = {1995},
	pages = {601-601},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@article{MTMT:2670980,
	title = {On the representation of infinite-length distributed RC one-ports},
	url = {https://m2.mtmt.hu/api/publication/2670980},
	author = {Székely, Vladimir},
	doi = {10.1109/31.135743},
	journal-iso = {IEEE T CIRCUITS-II},
	journal = {IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II - ANALOG AND DIGITAL SIGNAL PROCESSING},
	volume = {38},
	unique-id = {2670980},
	issn = {1057-7130},
	abstract = {The paper describes new representations of infinite distributed RC one-ports. Two new functions are introduced: the dipole intensity function (as the generalization of pole-zero pattern) and the time-constant density (as the generalization of the discrete time-constant set of a lumped network). Relations between the new representations and the complex impedance are presented. The use of the new representations is demonstrated by some examples.},
	year = {1991},
	pages = {711-719}
}

@article{MTMT:2607102,
	title = {Novel Tools for Thermal and Electrical Analysis of Circuits},
	url = {https://m2.mtmt.hu/api/publication/2607102},
	author = {Székely, Vladimir and Poppe, András},
	journal-iso = {ELECTROSOFT},
	journal = {ELECTROSOFT},
	volume = {1},
	unique-id = {2607102},
	issn = {0269-9184},
	year = {1990},
	pages = {234-252},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716}
}

@article{MTMT:2670979,
	title = {Fine structure of heat flow path in semiconductor devices: a measurement and identification method},
	url = {https://m2.mtmt.hu/api/publication/2670979},
	author = {Székely, Vladimir and Tran, van Bien},
	doi = {10.1016/0038-1101(88)90099-8},
	journal-iso = {SOLID STATE ELECTRON},
	journal = {SOLID-STATE ELECTRONICS},
	volume = {31},
	unique-id = {2670979},
	issn = {0038-1101},
	year = {1988},
	eissn = {1879-2405},
	pages = {1363-1368}
}

@article{MTMT:2667285,
	title = {Accurate Calculation of Device Heat Dynamics: a Special Feature of the TRANZ-TRAN Circuit-Analysis Program},
	url = {https://m2.mtmt.hu/api/publication/2667285},
	author = {Székely, Vladimir},
	journal-iso = {ELECTRON LETT},
	journal = {ELECTRONICS LETTERS},
	volume = {9},
	unique-id = {2667285},
	issn = {0013-5194},
	year = {1973},
	eissn = {1350-911X},
	pages = {132-134}
}

@article{MTMT:2667284,
	title = {Accurate Algorithm for Temperature Calculation of Devices in Nonlinear-Circuit-Analysis Programs},
	url = {https://m2.mtmt.hu/api/publication/2667284},
	author = {Székely, Vladimir and Tarnay, Kálmán},
	journal-iso = {ELECTRON LETT},
	journal = {ELECTRONICS LETTERS},
	volume = {8},
	unique-id = {2667284},
	issn = {0013-5194},
	year = {1972},
	eissn = {1350-911X},
	pages = {470-472}
}