@article{MTMT:2121544,
	title = {Silicon surface preparation and passivation by vapor phase of heavy water},
	url = {https://m2.mtmt.hu/api/publication/2121544},
	author = {Csikósné Pap, Andrea Edit and Nenyei, Z and Battistig, Gábor and Bársony, István},
	doi = {10.4028/www.scientific.net/SSP.145-146.181},
	journal-iso = {SOLID STATE PHENOM},
	journal = {SOLID STATE PHENOMENA},
	volume = {145-146},
	unique-id = {2121544},
	issn = {1012-0394},
	year = {2009},
	eissn = {1662-9779},
	pages = {181-184},
	orcid-numbers = {Csikósné Pap, Andrea Edit/0000-0002-2295-2286; Battistig, Gábor/0000-0003-2445-857X; Bársony, István/0000-0002-3469-9468}
}

@article{MTMT:2607305,
	title = {Silicon Surface Passivation by Static Charge},
	url = {https://m2.mtmt.hu/api/publication/2607305},
	author = {Mizsei, János},
	doi = {10.1016/j.apsusc.2006.03.075},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {252},
	unique-id = {2607305},
	issn = {0169-4332},
	abstract = {A properly passivated silicon surface is chemically stable, and all interface properties are constant. The silicon dioxide layers fulfil the chemical stability requirements; however, their surface and interface charges have effect on the silicon surface potential barrier. Positive charge is usually assumed at the oxide-silicon interface, thus depletion or inversion layer develops in the case of p and accumulation in the case of n-type silicon. The surface of silicon dioxide can be charged macroscopically by corona charger or by conductive rubber stamp, microscopically by a tip of some scanning probe microscope (STM or AFM). The oxide surface usually retains the charges for a long time, however in the case of ultra-thin or other leaky oxide continuous charging it is necessary to keep the constant surface potential. The main purpose of this work is to summarize the possibilities of charging up the surface, the effect of the surface and interface charge on the surface properties of the silicon. The rearrangement of the surface charges will also be discussed. (c) 2006 Elsevier B.V. All rights reserved.},
	year = {2006},
	eissn = {1873-5584},
	pages = {7691-7699},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:2607301,
	title = {Investigation of Fermi-level Pinning at Silicon/porous- Silicon Interface by Vibrating Capacitor and Surface Photovoltage Measurements},
	url = {https://m2.mtmt.hu/api/publication/2607301},
	author = {Mizsei, János and Shrair, Jamal and Zólomy, Imre},
	doi = {10.1016/j.apsusc.2004.05.110},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {235},
	unique-id = {2607301},
	issn = {0169-4332},
	abstract = {In this paper the PSi-silicon interface properties have been investigated by surface photovoltage (SPV) and vibrating capacitor (Kelvin) measurements. These methods are sensitive for the work function change and for the PSi-silicon interface potential barrier. The porous silicon (PSi) layer contains huge number of volume traps. Theoretical considerations support the high band bending (near to intrinsic condition or inversion) at the PSi-silicon interface, as high charge carrier concentration at the interface would result in high charge injection into the porous silicon. SPV and vibrating capacitor experiments show that the PSi volume charge and PSi-silicon interface charge tends to shift the interface to depleted state, near to the intrinsic condition (Fermi-level pinning). The interface conditions are summarised in the article and compared with the surface properties of the earlier discussed silicon-dioxide-covered silicon system. Light excitation can affect the charge stored in the PSi, thus the potential barrier at the PSi-silicon interface: the light induced surface voltage transients reveal this charge injection effect. (C) 2004 Elsevier B.V. All rights reserved.},
	year = {2004},
	eissn = {1873-5584},
	pages = {376-388},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:2607298,
	title = {Fermi-level Pinning and Passivation on the Oxide-covered and Bare Silicon Surfaces and Interfaces},
	url = {https://m2.mtmt.hu/api/publication/2607298},
	author = {Mizsei, János},
	doi = {10.1016/S0042-207X(02)00200-2},
	journal-iso = {VACUUM},
	journal = {VACUUM},
	volume = {67},
	unique-id = {2607298},
	issn = {0042-207X},
	abstract = {The properties of the bare (oxide-free) and oxide-covered silicon have been discussed in details in the literature. Positive charge is usually assumed at the insulator-semiconductor interface, thus depletion or inversion layer develops in the case of p-type, and accumulation in the case of n-type semiconductor. However, the semiconductor (Si) covered by an ultra-thin tunnelable insulator (native SiO2) layer has some peculiarities, i.e. connection between surface charge and the interface charge carrier density. Theoretical considerations and vibrating capacitor experiments show that the surface charge tends to shift the surface nearer to the intrinsic condition in the case of the ultra-thin insulator-covered semiconductor surfaces. (C) 2002 Elsevier Science Ltd. All rights reserved.},
	year = {2002},
	eissn = {1879-2715},
	pages = {59-67},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:2607299,
	title = {Ultra-thin Insulator Covered Silicon: Potential Barriers and Tunnel Currents},
	url = {https://m2.mtmt.hu/api/publication/2607299},
	author = {Mizsei, János},
	doi = {10.1016/S0038-1101(01)00300-8},
	journal-iso = {SOLID STATE ELECTRON},
	journal = {SOLID-STATE ELECTRONICS},
	volume = {46},
	unique-id = {2607299},
	issn = {0038-1101},
	abstract = {The surface voltage of ultra-thin insulator (native oxide) layer upon silicon substrate has been measured by the vibrating capacitor (Kelvin) method. A change of some hundreds of millivolts in the surface voltage has been observed on the illuminated ultra-thin insulator-Si system. The original (dark) value of the surface voltage is reached through a transient process. The present article discusses the origin and nature of this surface voltage transient (charging and discharging of the surface) and evaluation of the measured results for calculation of the tunnel current through ultrathin insulator layer. (C) 2002 Elsevier Science Ltd. All rights reserved.},
	year = {2002},
	eissn = {1879-2405},
	pages = {235-241},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}