TY - JOUR AU - Zámbó, Dániel AU - Kovács, Dávid AU - Radnóczi, György AU - Horváth, Zsolt Endre AU - Sulyok, Attila AU - Tolnai, István AU - Deák, András TI - Structural Control Enables Catalytic and Electrocatalytic Activity of Porous Tetrametallic Nanorods JF - SMALL J2 - SMALL VL - in press PY - 2024 PG - 12 SN - 1613-6810 DO - 10.1002/smll.202400421 UR - https://m2.mtmt.hu/api/publication/34822190 ID - 34822190 LA - English DB - MTMT ER - TY - JOUR AU - Maidebura, Y.E. AU - Mansurov, V.G. AU - Malin, T.V. AU - Smirnov, A.N. AU - Zhuravlev, K.S. AU - Pécz, Béla TI - Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 655 PY - 2024 PG - 9 SN - 0169-4332 DO - 10.1016/j.apsusc.2024.159595 UR - https://m2.mtmt.hu/api/publication/34822178 ID - 34822178 LA - English DB - MTMT ER - TY - JOUR AU - Roccaforte, F. AU - Vivona, M. AU - Panasci, S.E. AU - Greco, G. AU - Fiorenza, P. AU - Sulyok, Attila AU - Koós, Antal Adolf AU - Pécz, Béla AU - Giannazzo, F. TI - Schottky contacts on sulfurized silicon carbide (4H-SiC) surface JF - APPLIED PHYSICS LETTERS J2 - APPL PHYS LETT VL - 124 PY - 2024 IS - 10 PG - 5 SN - 0003-6951 DO - 10.1063/5.0192691 UR - https://m2.mtmt.hu/api/publication/34773813 ID - 34773813 LA - English DB - MTMT ER - TY - JOUR AU - Horváth, Anita AU - Németh, Miklós László AU - Vargáné Beck, Andrea AU - Sáfrán, György AU - Horváth, Zsolt Endre AU - Rigó, István AU - May, Z AU - Korányi, Tamás TI - Methane pyrolysis on NiMo/MgO catalysts: The significance of equimolar NiMo alloy resisting nanosize segregation during the reaction JF - APPLIED CATALYSIS A-GENERAL J2 - APPL CATAL A-GEN VL - 676 PY - 2024 PG - 16 SN - 0926-860X DO - 10.1016/j.apcata.2024.119651 UR - https://m2.mtmt.hu/api/publication/34743262 ID - 34743262 LA - English DB - MTMT ER - TY - JOUR AU - Hegedűs, Máté AU - Kovácsné Kis, Viktória AU - Kovács, Zsolt TI - A fogzománc szerkezeti és mechanikai tulajdonságai JF - FIZIKAI SZEMLE J2 - FIZIKAI SZEMLE VL - 74 PY - 2024 IS - 2 SP - 56 EP - 61 PG - 6 SN - 0015-3257 UR - https://m2.mtmt.hu/api/publication/34738071 ID - 34738071 N1 - "A kutatás pénzügyi hátterét a Nemzeti Kutatási, Fejlesztési és Innovációs Hivatal biztosította a K-125100 számú pályázat keretében. Köszönettel tartozunk a [4, 9] publikációk társszerzőinek." LA - Hungarian DB - MTMT ER - TY - JOUR AU - Lábár, János AU - Pécz, Béla TI - Transzmissziós elektronmikroszkópia az MFA-ban JF - FIZIKAI SZEMLE J2 - FIZIKAI SZEMLE VL - 74 PY - 2024 IS - 3 SP - 84 EP - 87 PG - 4 SN - 0015-3257 UR - https://m2.mtmt.hu/api/publication/34727542 ID - 34727542 LA - Hungarian DB - MTMT ER - TY - JOUR AU - Biró, László Péter AU - Pécz, Béla TI - Gyulai József öröksége a funkcionális anyagok tudományában JF - FIZIKAI SZEMLE J2 - FIZIKAI SZEMLE VL - 74 PY - 2024 IS - 3 SP - 73 EP - 73 PG - 1 SN - 0015-3257 UR - https://m2.mtmt.hu/api/publication/34727537 ID - 34727537 LA - Hungarian DB - MTMT ER - TY - JOUR AU - Baji, Zsófia AU - Pécz, Béla AU - Fogarassy, Zsolt AU - Szabó, Zoltán AU - Cora, Ildikó TI - Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature JF - THIN SOLID FILMS J2 - THIN SOLID FILMS VL - 794 PY - 2024 PG - 14 SN - 0040-6090 DO - 10.1016/j.tsf.2024.140267 UR - https://m2.mtmt.hu/api/publication/34714394 ID - 34714394 AB - Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity. LA - English DB - MTMT ER - TY - JOUR AU - Fogarassy, Zsolt AU - Wójcicka, Aleksandra AU - Cora, Ildikó AU - Rácz, Adél Sarolta AU - Grzanka, Szymon AU - Dodony, Erzsébet AU - Perlin, Piotr AU - Borysiewicz, Michał A. TI - Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING J2 - MAT SCI SEMICON PROC VL - 175 PY - 2024 PG - 12 SN - 1369-8001 DO - 10.1016/j.mssp.2024.108250 UR - https://m2.mtmt.hu/api/publication/34714097 ID - 34714097 AB - In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior. LA - English DB - MTMT ER - TY - JOUR AU - Kovácsné Kis, Viktória AU - Kovács, Zsolt AU - Czigány, Zsolt TI - Improved Method for Electron Powder Diffraction-Based Rietveld Analysis of Nanomaterials JF - NANOMATERIALS J2 - NANOMATERIALS-BASEL VL - 14 PY - 2024 IS - 5 PG - 17 SN - 2079-4991 DO - 10.3390/nano14050444 UR - https://m2.mtmt.hu/api/publication/34699351 ID - 34699351 AB - Multiphase nanomaterials are of increasing importance in material science. Providing reliable and statistically meaningful information on their average nanostructure is essential for synthesis control and applications. In this paper, we propose a novel procedure that simplifies and makes more effective the electron powder diffraction-based Rietveld analysis of nanomaterials. Our single step in-TEM method allows to obtain the instrumental broadening function of the TEM directly from a single measurement without the need for an additional X-ray diffraction measurement. Using a multilayer graphene calibration standard and applying properly controlled acquisition conditions on a spherical aberration-corrected microscope, we achieved the instrumental broadening of ±0.01 Å in terms of interplanar spacing. The shape of the diffraction peaks is modeled as a function of the scattering angle using the Caglioti relation, and the obtained parameters for instrumental broadening can be directly applied in the Rietveld analysis of electron diffraction data of the analyzed specimen. During peak shape analysis, the instrumental broadening parameters of the TEM are controlled separately from nanostructure-related peak broadening effects, which contribute to the higher reliability of nanostructure information extracted from electron diffraction patterns. The potential of the proposed procedure is demonstrated through the Rietveld analysis of hematite nanopowder and two-component Cu-Ni nanocrystalline thin film specimens. LA - English DB - MTMT ER -