@article{MTMT:34822190, title = {Structural Control Enables Catalytic and Electrocatalytic Activity of Porous Tetrametallic Nanorods}, url = {https://m2.mtmt.hu/api/publication/34822190}, author = {Zámbó, Dániel and Kovács, Dávid and Radnóczi, György and Horváth, Zsolt Endre and Sulyok, Attila and Tolnai, István and Deák, András}, doi = {10.1002/smll.202400421}, journal-iso = {SMALL}, journal = {SMALL}, volume = {in press}, unique-id = {34822190}, issn = {1613-6810}, year = {2024}, eissn = {1613-6829}, orcid-numbers = {Radnóczi, György/0000-0002-5056-7625; Horváth, Zsolt Endre/0000-0002-4632-0136; Deák, András/0000-0002-2526-1245} } @article{MTMT:34822178, title = {Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure}, url = {https://m2.mtmt.hu/api/publication/34822178}, author = {Maidebura, Y.E. and Mansurov, V.G. and Malin, T.V. and Smirnov, A.N. and Zhuravlev, K.S. and Pécz, Béla}, doi = {10.1016/j.apsusc.2024.159595}, journal-iso = {APPL SURF SCI}, journal = {APPLIED SURFACE SCIENCE}, volume = {655}, unique-id = {34822178}, issn = {0169-4332}, year = {2024}, eissn = {1873-5584}, orcid-numbers = {Pécz, Béla/0000-0002-4651-6972} } @article{MTMT:34773813, title = {Schottky contacts on sulfurized silicon carbide (4H-SiC) surface}, url = {https://m2.mtmt.hu/api/publication/34773813}, author = {Roccaforte, F. and Vivona, M. and Panasci, S.E. and Greco, G. and Fiorenza, P. and Sulyok, Attila and Koós, Antal Adolf and Pécz, Béla and Giannazzo, F.}, doi = {10.1063/5.0192691}, journal-iso = {APPL PHYS LETT}, journal = {APPLIED PHYSICS LETTERS}, volume = {124}, unique-id = {34773813}, issn = {0003-6951}, year = {2024}, eissn = {1077-3118}, orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972} } @article{MTMT:34743262, title = {Methane pyrolysis on NiMo/MgO catalysts: The significance of equimolar NiMo alloy resisting nanosize segregation during the reaction}, url = {https://m2.mtmt.hu/api/publication/34743262}, author = {Horváth, Anita and Németh, Miklós László and Vargáné Beck, Andrea and Sáfrán, György and Horváth, Zsolt Endre and Rigó, István and May, Z and Korányi, Tamás}, doi = {10.1016/j.apcata.2024.119651}, journal-iso = {APPL CATAL A-GEN}, journal = {APPLIED CATALYSIS A-GENERAL}, volume = {676}, unique-id = {34743262}, issn = {0926-860X}, year = {2024}, eissn = {1873-3875}, orcid-numbers = {Sáfrán, György/0000-0003-3708-3551; Horváth, Zsolt Endre/0000-0002-4632-0136} } @article{MTMT:34738071, title = {A fogzománc szerkezeti és mechanikai tulajdonságai}, url = {https://m2.mtmt.hu/api/publication/34738071}, author = {Hegedűs, Máté and Kovácsné Kis, Viktória and Kovács, Zsolt}, journal-iso = {FIZIKAI SZEMLE}, journal = {FIZIKAI SZEMLE}, volume = {74}, unique-id = {34738071}, issn = {0015-3257}, year = {2024}, pages = {56-61}, orcid-numbers = {Kovács, Zsolt/0000-0001-6802-3311} } @article{MTMT:34727542, title = {Transzmissziós elektronmikroszkópia az MFA-ban}, url = {https://m2.mtmt.hu/api/publication/34727542}, author = {Lábár, János and Pécz, Béla}, journal-iso = {FIZIKAI SZEMLE}, journal = {FIZIKAI SZEMLE}, volume = {74}, unique-id = {34727542}, issn = {0015-3257}, year = {2024}, pages = {84-87}, orcid-numbers = {Lábár, János/0000-0002-3944-8350; Pécz, Béla/0000-0002-4651-6972} } @article{MTMT:34727537, title = {Gyulai József öröksége a funkcionális anyagok tudományában}, url = {https://m2.mtmt.hu/api/publication/34727537}, author = {Biró, László Péter and Pécz, Béla}, journal-iso = {FIZIKAI SZEMLE}, journal = {FIZIKAI SZEMLE}, volume = {74}, unique-id = {34727537}, issn = {0015-3257}, year = {2024}, pages = {73-73}, orcid-numbers = {Biró, László Péter/0000-0001-7261-0420; Pécz, Béla/0000-0002-4651-6972} } @article{MTMT:34714394, title = {Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature}, url = {https://m2.mtmt.hu/api/publication/34714394}, author = {Baji, Zsófia and Pécz, Béla and Fogarassy, Zsolt and Szabó, Zoltán and Cora, Ildikó}, doi = {10.1016/j.tsf.2024.140267}, journal-iso = {THIN SOLID FILMS}, journal = {THIN SOLID FILMS}, volume = {794}, unique-id = {34714394}, issn = {0040-6090}, abstract = {Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity.}, keywords = {Atomic layer deposition; Thermal annealing; Pyrrhotite; Iron sulphide}, year = {2024}, eissn = {1879-2731}, orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237; Szabó, Zoltán/0000-0002-2150-1459} } @article{MTMT:34714097, title = {Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack}, url = {https://m2.mtmt.hu/api/publication/34714097}, author = {Fogarassy, Zsolt and Wójcicka, Aleksandra and Cora, Ildikó and Rácz, Adél Sarolta and Grzanka, Szymon and Dodony, Erzsébet and Perlin, Piotr and Borysiewicz, Michał A.}, doi = {10.1016/j.mssp.2024.108250}, journal-iso = {MAT SCI SEMICON PROC}, journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, volume = {175}, unique-id = {34714097}, issn = {1369-8001}, abstract = {In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior.}, year = {2024}, eissn = {1873-4081}, orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237} } @article{MTMT:34699351, title = {Improved Method for Electron Powder Diffraction-Based Rietveld Analysis of Nanomaterials}, url = {https://m2.mtmt.hu/api/publication/34699351}, author = {Kovácsné Kis, Viktória and Kovács, Zsolt and Czigány, Zsolt}, doi = {10.3390/nano14050444}, journal-iso = {NANOMATERIALS-BASEL}, journal = {NANOMATERIALS}, volume = {14}, unique-id = {34699351}, abstract = {Multiphase nanomaterials are of increasing importance in material science. Providing reliable and statistically meaningful information on their average nanostructure is essential for synthesis control and applications. In this paper, we propose a novel procedure that simplifies and makes more effective the electron powder diffraction-based Rietveld analysis of nanomaterials. Our single step in-TEM method allows to obtain the instrumental broadening function of the TEM directly from a single measurement without the need for an additional X-ray diffraction measurement. Using a multilayer graphene calibration standard and applying properly controlled acquisition conditions on a spherical aberration-corrected microscope, we achieved the instrumental broadening of ±0.01 Å in terms of interplanar spacing. The shape of the diffraction peaks is modeled as a function of the scattering angle using the Caglioti relation, and the obtained parameters for instrumental broadening can be directly applied in the Rietveld analysis of electron diffraction data of the analyzed specimen. During peak shape analysis, the instrumental broadening parameters of the TEM are controlled separately from nanostructure-related peak broadening effects, which contribute to the higher reliability of nanostructure information extracted from electron diffraction patterns. The potential of the proposed procedure is demonstrated through the Rietveld analysis of hematite nanopowder and two-component Cu-Ni nanocrystalline thin film specimens.}, keywords = {electron diffraction; Nanopowder; Rietveld analysis; nanostructure characterization; instrumental broadening}, year = {2024}, eissn = {2079-4991}, orcid-numbers = {Kovács, Zsolt/0000-0001-6802-3311; Czigány, Zsolt/0000-0001-6410-8801} }