TY - JOUR AU - Roccaforte, F. AU - Vivona, M. AU - Panasci, S.E. AU - Greco, G. AU - Fiorenza, P. AU - Sulyok, Attila AU - Koós, Antal Adolf AU - Pécz, Béla AU - Giannazzo, F. TI - Schottky contacts on sulfurized silicon carbide (4H-SiC) surface JF - APPLIED PHYSICS LETTERS J2 - APPL PHYS LETT VL - 124 PY - 2024 IS - 10 PG - 5 SN - 0003-6951 DO - 10.1063/5.0192691 UR - https://m2.mtmt.hu/api/publication/34773813 ID - 34773813 LA - English DB - MTMT ER - TY - JOUR AU - Horváth, Anita AU - Németh, Miklós László AU - Vargáné Beck, Andrea AU - Sáfrán, György AU - Horváth, Zsolt Endre AU - Rigó, István AU - May, Z AU - Korányi, Tamás TI - Methane pyrolysis on NiMo/MgO catalysts: The significance of equimolar NiMo alloy resisting nanosize segregation during the reaction JF - APPLIED CATALYSIS A-GENERAL J2 - APPL CATAL A-GEN VL - 676 PY - 2024 PG - 16 SN - 0926-860X DO - 10.1016/j.apcata.2024.119651 UR - https://m2.mtmt.hu/api/publication/34743262 ID - 34743262 LA - English DB - MTMT ER - TY - JOUR AU - Biró, László Péter AU - Tapasztó, Levente AU - Nemes Incze, Péter TI - Pásztázószondás módszerek az MFA-ban JF - FIZIKAI SZEMLE J2 - FIZIKAI SZEMLE VL - 74 PY - 2024 IS - 3 SP - 74 EP - 79 PG - 6 SN - 0015-3257 UR - https://m2.mtmt.hu/api/publication/34727538 ID - 34727538 LA - Hungarian DB - MTMT ER - TY - JOUR AU - Biró, László Péter AU - Pécz, Béla TI - Gyulai József öröksége a funkcionális anyagok tudományában JF - FIZIKAI SZEMLE J2 - FIZIKAI SZEMLE VL - 74 PY - 2024 IS - 3 SP - 73 EP - 73 PG - 1 SN - 0015-3257 UR - https://m2.mtmt.hu/api/publication/34727537 ID - 34727537 LA - Hungarian DB - MTMT ER - TY - JOUR AU - Furko, Monika AU - Detsch, Rainer AU - Horváth, Zsolt Endre AU - Balázsi, Katalin AU - Boccaccini, Aldo R. AU - Balázsi, Csaba TI - Amorphous, Carbonated Calcium Phosphate and Biopolymer-Composite-Coated Si3N4/MWCNTs as Potential Novel Implant Materials JF - NANOMATERIALS J2 - NANOMATERIALS-BASEL VL - 14 PY - 2024 IS - 3 PG - 16 SN - 2079-4991 DO - 10.3390/nano14030279 UR - https://m2.mtmt.hu/api/publication/34672527 ID - 34672527 LA - English DB - MTMT ER - TY - JOUR AU - Giannazzo, Filippo AU - Panasci, Salvatore Ethan AU - Schilirò, Emanuela AU - Koós, Antal Adolf AU - Pécz, Béla TI - Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING J2 - MAT SCI SEMICON PROC VL - 174 PY - 2024 PG - 13 SN - 1369-8001 DO - 10.1016/j.mssp.2024.108220 UR - https://m2.mtmt.hu/api/publication/34571541 ID - 34571541 AB - Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is currently explored. The integration of two dimensional (2D) materials, such as graphene and molybdenum disulfide (MoS2) provides silicon carbide (SiC) with additional functionalities, allowing to expand its range of applications. This article reviews the state-of-the art methods for scalable growth of graphene and MoS2 on SiC, specifically on the hexagonal polytypes. Some open research directions in materials integration have been also discussed, like the use of epitaxial graphene (Epi-Gr) as interlayer for van der Waals (vdW) epitaxy of GaN or Ga2O3 on SiC substrates, and the growth of 2D forms of GaN materials by confined epitaxy at Epi-Gr/SiC interface. Finally, an overview of recently proposed electronics/optoelectronics applications of these material systems, specifically for high frequency electronics, quantum metrology, THz and UV detectors, is provided. This work can be a useful guide for silicon carbide community on these open research directions. LA - English DB - MTMT ER - TY - JOUR AU - Panasci, Salvatore E. AU - Deretzis, Ioannis AU - Schilirò, Emanuela AU - La, Magna Antonino AU - Roccaforte, Fabrizio AU - Koós, Antal Adolf AU - Nemeth, Miklos AU - Pécz, Béla AU - Cannas, Marco AU - Agnello, Simonpietro AU - Giannazzo, Filippo TI - Interface Properties of MoS2 van der Waals Heterojunctions with GaN JF - NANOMATERIALS J2 - NANOMATERIALS-BASEL VL - 14 PY - 2024 IS - 2 PG - 14 SN - 2079-4991 DO - 10.3390/nano14020133 UR - https://m2.mtmt.hu/api/publication/34481837 ID - 34481837 AB - The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm−2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations. LA - English DB - MTMT ER - TY - JOUR AU - Nguyen Quoc, Khánh AU - Horváth, Zsolt Endre AU - Zolnai, Zsolt AU - Petrik, Péter AU - Pósa, László AU - Volk, János TI - Effect of process parameters on co-sputtered Al(1-x)ScxN layer's properties: Morphology, crystal structure, strain, band gap, and piezoelectricity JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING J2 - MAT SCI SEMICON PROC VL - 169 PY - 2024 PG - 9 SN - 1369-8001 DO - 10.1016/j.mssp.2023.107902 UR - https://m2.mtmt.hu/api/publication/34196964 ID - 34196964 AB - The effect of pulse direct current (DC) reactive ion co-sputtering parameters on the morphology, crystal structure, residual stress, band gap, and piezoelectric properties of the Al(1-x)ScxN thin film deposited in large target-to-substrate distance (TSD) system has been studied using Scanning Probe Microscopy, X ray Diffractometry, Spectroscopic Ellipsometry, and profilometer, among others. The process pressure was revealed to be the key factor which essentially determines the quality of the film for such system. As low as 0.2 Pa working pressure is needed to achieve smooth nitride layer with good piezoelectric properties. High N2/(Ar + N2) gas ratio also was shown to result in better film properties. Residual stress in nitride film, and thereby the optical band gap can be tuned by variation of process pressure, gas ratio, and Sc fraction in the studied x range (0–0.5). The Al(1-x)ScxN film deposited at low pressure, medium N2 gas ratio with x ∼ 0.41 shows high piezoelectric coefficient, relatively low residual stress, and smooth surface. Top electrode has been applied to eliminate the interfering effect of the restraining force induced by the unexcited matrix materials around tip/sample contact for Piezoresponse Force Microscopic (PFM) measurement of piezoelectric constant of thin nitride film. We have shown by comparing the corrected d33corr data determined with PFM to those obtained from direct piezoelectric method that PFM using proper measurement conditions and correction can be applied as a quantitative method for study of piezoelectric properties of thin film. LA - English DB - MTMT ER - TY - JOUR AU - Kertész, Krisztián Imre AU - Piszter, Gábor AU - Vargáné Beck, Andrea AU - Horváth, Anita AU - Nagy, G. AU - Molnár, György AU - Radnóczi, György Zoltán AU - Horváth, Zsolt Endre AU - Illés, Levente AU - Biró, László Péter TI - Hybrid Bio-Nanocomposites by Integrating Nanoscale Au in Butterfly Scales Colored by Photonic Nanoarchitectures JF - PHOTONICS J2 - PHOTONICS-BASEL VL - 10 PY - 2023 IS - 11 PG - 15 SN - 2304-6732 DO - 10.3390/photonics10111275 UR - https://m2.mtmt.hu/api/publication/34538415 ID - 34538415 LA - English DB - MTMT ER - TY - JOUR AU - Rácz, Adél Sarolta AU - Kun, Péter AU - Kerner, Zsolt Gábor AU - Fogarassy, Zsolt AU - Menyhárd, Miklós TI - Tungsten Carbide Nanolayer Formation by Ion Beam Mixing with Argon and Xenon Ions for Applications as Protective Coatings JF - ACS APPLIED NANO MATERIALS J2 - ACS APPL NANO MATER VL - 6 PY - 2023 IS - 5 SP - 3816 EP - 3824 PG - 9 SN - 2574-0970 DO - 10.1021/acsanm.2c05505 UR - https://m2.mtmt.hu/api/publication/34538351 ID - 34538351 LA - English DB - MTMT ER -