@article{MTMT:34822190,
	title = {Structural Control Enables Catalytic and Electrocatalytic Activity of Porous Tetrametallic Nanorods},
	url = {https://m2.mtmt.hu/api/publication/34822190},
	author = {Zámbó, Dániel and Kovács, Dávid and Radnóczi, György and Horváth, Zsolt Endre and Sulyok, Attila and Tolnai, István and Deák, András},
	doi = {10.1002/smll.202400421},
	journal-iso = {SMALL},
	journal = {SMALL},
	volume = {in press},
	unique-id = {34822190},
	issn = {1613-6810},
	year = {2024},
	eissn = {1613-6829},
	orcid-numbers = {Radnóczi, György/0000-0002-5056-7625; Horváth, Zsolt Endre/0000-0002-4632-0136; Deák, András/0000-0002-2526-1245}
}

@article{MTMT:34773813,
	title = {Schottky contacts on sulfurized silicon carbide (4H-SiC) surface},
	url = {https://m2.mtmt.hu/api/publication/34773813},
	author = {Roccaforte, F. and Vivona, M. and Panasci, S.E. and Greco, G. and Fiorenza, P. and Sulyok, Attila and Koós, Antal Adolf and Pécz, Béla and Giannazzo, F.},
	doi = {10.1063/5.0192691},
	journal-iso = {APPL PHYS LETT},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {124},
	unique-id = {34773813},
	issn = {0003-6951},
	year = {2024},
	eissn = {1077-3118},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34743262,
	title = {Methane pyrolysis on NiMo/MgO catalysts: The significance of equimolar NiMo alloy resisting nanosize segregation during the reaction},
	url = {https://m2.mtmt.hu/api/publication/34743262},
	author = {Horváth, Anita and Németh, Miklós László and Vargáné Beck, Andrea and Sáfrán, György and Horváth, Zsolt Endre and Rigó, István and May, Z and Korányi, Tamás},
	doi = {10.1016/j.apcata.2024.119651},
	journal-iso = {APPL CATAL A-GEN},
	journal = {APPLIED CATALYSIS A-GENERAL},
	volume = {676},
	unique-id = {34743262},
	issn = {0926-860X},
	year = {2024},
	eissn = {1873-3875},
	orcid-numbers = {Sáfrán, György/0000-0003-3708-3551; Horváth, Zsolt Endre/0000-0002-4632-0136}
}

@article{MTMT:34727538,
	title = {Pásztázószondás módszerek az MFA-ban},
	url = {https://m2.mtmt.hu/api/publication/34727538},
	author = {Biró, László Péter and Tapasztó, Levente and Nemes Incze, Péter},
	journal-iso = {FIZIKAI SZEMLE},
	journal = {FIZIKAI SZEMLE},
	volume = {74},
	unique-id = {34727538},
	issn = {0015-3257},
	year = {2024},
	pages = {74-79},
	orcid-numbers = {Biró, László Péter/0000-0001-7261-0420; Tapasztó, Levente/0000-0002-9377-8465; Nemes Incze, Péter/0000-0002-1222-3020}
}

@article{MTMT:34727537,
	title = {Gyulai József öröksége a funkcionális anyagok tudományában},
	url = {https://m2.mtmt.hu/api/publication/34727537},
	author = {Biró, László Péter and Pécz, Béla},
	journal-iso = {FIZIKAI SZEMLE},
	journal = {FIZIKAI SZEMLE},
	volume = {74},
	unique-id = {34727537},
	issn = {0015-3257},
	year = {2024},
	pages = {73-73},
	orcid-numbers = {Biró, László Péter/0000-0001-7261-0420; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34672527,
	title = {Amorphous, Carbonated Calcium Phosphate and Biopolymer-Composite-Coated Si3N4/MWCNTs as Potential Novel Implant Materials},
	url = {https://m2.mtmt.hu/api/publication/34672527},
	author = {Furko, Monika and Detsch, Rainer and Horváth, Zsolt Endre and Balázsi, Katalin and Boccaccini, Aldo R. and Balázsi, Csaba},
	doi = {10.3390/nano14030279},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {14},
	unique-id = {34672527},
	keywords = {Biopolymers; SI3N4; MWCNT; BIOCOMPOSITES; amorphous calcium phosphate},
	year = {2024},
	eissn = {2079-4991},
	orcid-numbers = {Horváth, Zsolt Endre/0000-0002-4632-0136; Balázsi, Katalin/0000-0002-8929-9672; Balázsi, Csaba/0000-0003-4219-8783}
}

@article{MTMT:34571541,
	title = {Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices},
	url = {https://m2.mtmt.hu/api/publication/34571541},
	author = {Giannazzo, Filippo and Panasci, Salvatore Ethan and Schilirò, Emanuela and Koós, Antal Adolf and Pécz, Béla},
	doi = {10.1016/j.mssp.2024.108220},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {174},
	unique-id = {34571541},
	issn = {1369-8001},
	abstract = {Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is currently explored. The integration of two dimensional (2D) materials, such as graphene and molybdenum disulfide (MoS2) provides silicon carbide (SiC) with additional functionalities, allowing to expand its range of applications. This article reviews the state-of-the art methods for scalable growth of graphene and MoS2 on SiC, specifically on the hexagonal polytypes. Some open research directions in materials integration have been also discussed, like the use of epitaxial graphene (Epi-Gr) as interlayer for van der Waals (vdW) epitaxy of GaN or Ga2O3 on SiC substrates, and the growth of 2D forms of GaN materials by confined epitaxy at Epi-Gr/SiC interface. Finally, an overview of recently proposed electronics/optoelectronics applications of these material systems, specifically for high frequency electronics, quantum metrology, THz and UV detectors, is provided. This work can be a useful guide for silicon carbide community on these open research directions.},
	keywords = {sensors; Graphene; silicon carbide; ELECTRONIC DEVICES; MOS; heterogeneous integration},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34481837,
	title = {Interface Properties of MoS2 van der Waals Heterojunctions with GaN},
	url = {https://m2.mtmt.hu/api/publication/34481837},
	author = {Panasci, Salvatore E. and Deretzis, Ioannis and Schilirò, Emanuela and La, Magna Antonino and Roccaforte, Fabrizio and Koós, Antal Adolf and Nemeth, Miklos and Pécz, Béla and Cannas, Marco and Agnello, Simonpietro and Giannazzo, Filippo},
	doi = {10.3390/nano14020133},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {14},
	unique-id = {34481837},
	abstract = {The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm−2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.},
	keywords = {INTERFACE; GAN; DFT; MOS2; vdW heterostructures; wide-band gap},
	year = {2024},
	eissn = {2079-4991},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34196964,
	title = {Effect of process parameters on co-sputtered Al(1-x)ScxN layer's properties: Morphology, crystal structure, strain, band gap, and piezoelectricity},
	url = {https://m2.mtmt.hu/api/publication/34196964},
	author = {Nguyen Quoc, Khánh and Horváth, Zsolt Endre and Zolnai, Zsolt and Petrik, Péter and Pósa, László and Volk, János},
	doi = {10.1016/j.mssp.2023.107902},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {169},
	unique-id = {34196964},
	issn = {1369-8001},
	abstract = {The effect of pulse direct current (DC) reactive ion co-sputtering parameters on the morphology, crystal structure, residual stress, band gap, and piezoelectric properties of the Al(1-x)ScxN thin film deposited in large target-to-substrate distance (TSD) system has been studied using Scanning Probe Microscopy, X ray Diffractometry, Spectroscopic Ellipsometry, and profilometer, among others. The process pressure was revealed to be the key factor which essentially determines the quality of the film for such system. As low as 0.2 Pa working pressure is needed to achieve smooth nitride layer with good piezoelectric properties. High N2/(Ar + N2) gas ratio also was shown to result in better film properties. Residual stress in nitride film, and thereby the optical band gap can be tuned by variation of process pressure, gas ratio, and Sc fraction in the studied x range (0–0.5). The Al(1-x)ScxN film deposited at low pressure, medium N2 gas ratio with x ∼ 0.41 shows high piezoelectric coefficient, relatively low residual stress, and smooth surface. Top electrode has been applied to eliminate the interfering effect of the restraining force induced by the unexcited matrix materials around tip/sample contact for Piezoresponse Force Microscopic (PFM) measurement of piezoelectric constant of thin nitride film. We have shown by comparing the corrected d33corr data determined with PFM to those obtained from direct piezoelectric method that PFM using proper measurement conditions and correction can be applied as a quantitative method for study of piezoelectric properties of thin film.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Nguyen Quoc, Khánh/0000-0001-7032-2919; Horváth, Zsolt Endre/0000-0002-4632-0136; Zolnai, Zsolt/0000-0003-3457-7679; Petrik, Péter/0000-0002-5374-6952; Volk, János/0000-0003-3633-6190}
}

@misc{MTMT:34719870,
	title = {Signature of pressure-induced topological phase transition in ZrTe5},
	url = {https://m2.mtmt.hu/api/publication/34719870},
	author = {Kovács-Krausz, Zoltán and Nagy, Dániel and Márffy, Albin Máté and Karpiak, Bogdan and Tajkov, Zoltán and Oroszlány, László and Koltai, János and Nemes Incze, Péter and Dash, Saroj P and Makk, Péter and Csonka, Szabolcs and Tóvári, Endre},
	unique-id = {34719870},
	abstract = {The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is in a weak TI phase in ambient conditions.},
	year = {2023},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Oroszlány, László/0000-0001-5682-6424; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Tóvári, Endre/0000-0002-0000-3805}
}