TY  - PAT
AU  - Ádám, Antalné
AU  - Bársony, István
AU  - Dücső, Csaba
AU  - Eroes, Magdolna
AU  - Mohácsy, Tibor
AU  - Payer, Karolyne
AU  - Vázsonyi, Éva
TI  - CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining
PY  - 2012
UR  - https://m2.mtmt.hu/api/publication/1134759
ID  - 1134759
AB  - NOVELTY - A front side isotropic porous silicon etching is started from exposed predetermined domain surface. The etching is continued until predetermined domain portion is fully underetched, to form a porous silicon sacrificial layer that partially covers predetermined domain portion. The exposed porous silicon sacrificial layer surface is passivated when applied with metallic thin film. Metallic contact pieces of circuit component are formed through CMOS technology steps. The porous silicon sacrificial layer is chemically dissolved to form micromechanical component after removing thin film.
LA  - English
DB  - MTMT
ER  - 

TY  - PAT
AU  - Mallát, T
AU  - Tungler, Antal
AU  - Petró, J
TI  - Eljárás nitril csoport aldehid csoporttá alakítására
CY  - Country:10001(1)
PY  - 1988
UR  - https://m2.mtmt.hu/api/publication/2620858
ID  - 2620858
LA  - Hungarian
DB  - MTMT
ER  -