@book{MTMT:1134759,
	title = {CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining},
	url = {https://m2.mtmt.hu/api/publication/1134759},
	author = {Ádám, Antalné and Bársony, István and Dücső, Csaba and Eroes, Magdolna and Mohácsy, Tibor and Payer, Karolyne and Vázsonyi, Éva},
	unique-id = {1134759},
	abstract = {NOVELTY - A front side isotropic porous silicon etching is started from exposed predetermined domain surface. The etching is continued until predetermined domain portion is fully underetched, to form a porous silicon sacrificial layer that partially covers predetermined domain portion. The exposed porous silicon sacrificial layer surface is passivated when applied with metallic thin film. Metallic contact pieces of circuit component are formed through CMOS technology steps. The porous silicon sacrificial layer is chemically dissolved to form micromechanical component after removing thin film.},
	year = {2012},
	orcid-numbers = {Bársony, István/0000-0002-3469-9468; Dücső, Csaba/0000-0002-3003-9569}
}

@{MTMT:2620858,
	title = {Eljárás nitril csoport aldehid csoporttá alakítására},
	url = {https://m2.mtmt.hu/api/publication/2620858},
	author = {Mallát, T and Tungler, Antal and Petró, J},
	unique-id = {2620858},
	year = {1988}
}