@article{MTMT:30864570,
title = {Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers},
url = {https://m2.mtmt.hu/api/publication/30864570},
author = {Pető, János and Dobrik, Gergely and Kukucska, Gergő and Vancsó, Péter and Koós, Antal Adolf and Koltai, János and Nemes Incze, Péter and Hwang, Chanyong and Tapasztó, Levente},
doi = {10.1038/s41699-019-0123-5},
journal-iso = {NPJ 2D MATER APPL},
journal = {NPJ 2D MATERIALS AND APPLICATIONS},
volume = {3},
unique-id = {30864570},
year = {2019},
eissn = {2397-7132},
orcid-numbers = {Dobrik, Gergely/0000-0002-6690-274X; Kukucska, Gergő/0000-0002-8715-8075; Vancsó, Péter/0000-0003-4333-9787; Koós, Antal Adolf/0000-0003-0563-948X; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Tapasztó, Levente/0000-0002-9377-8465}
}
@article{MTMT:30774658,
title = {Transition metal chalcogenide single layers as an active platform for single-atom catalysis},
url = {https://m2.mtmt.hu/api/publication/30774658},
author = {Vancsó, Péter and Popov, Z.I. and Pető, János and Ollár, Tamás and Dobrik, Gergely and Pap, József Sándor and Hwang, C. and Sorokin, P.B. and Tapasztó, Levente},
doi = {10.1021/acsenergylett.9b01097},
journal-iso = {ACS ENERGY LETT},
journal = {ACS ENERGY LETTERS},
volume = {4},
unique-id = {30774658},
issn = {2380-8195},
year = {2019},
eissn = {2380-8195},
pages = {1947-1953},
orcid-numbers = {Vancsó, Péter/0000-0003-4333-9787; Dobrik, Gergely/0000-0002-6690-274X; Tapasztó, Levente/0000-0002-9377-8465}
}
@article{MTMT:30331608,
title = {Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions},
url = {https://m2.mtmt.hu/api/publication/30331608},
author = {Pető, János and Ollár, Tamás and Vancsó, Péter and Popov, Z.I. and Magda, Gábor Zsolt and Dobrik, Gergely and Hwang, C. and Sorokin, P.B. and Tapasztó, Levente},
doi = {10.1038/s41557-018-0136-2},
journal-iso = {NAT CHEM},
journal = {NATURE CHEMISTRY},
volume = {10},
unique-id = {30331608},
issn = {1755-4330},
year = {2018},
eissn = {1755-4349},
pages = {1246-1251},
orcid-numbers = {Vancsó, Péter/0000-0003-4333-9787; Dobrik, Gergely/0000-0002-6690-274X; Tapasztó, Levente/0000-0002-9377-8465}
}
@article{MTMT:3390771,
title = {Exfoliation of single layer BiTeI flakes},
url = {https://m2.mtmt.hu/api/publication/3390771},
author = {Fülöp, Bálint and Tajkov, Zoltán and Pető, János and Kun, Péter and Koltai, János and Oroszlány, László and Tóvári, Endre and Murakawa, H and Tokura, Y and Bordács, Sándor and Tapasztó, Levente and Csonka, Szabolcs},
doi = {10.1088/2053-1583/aac652},
journal-iso = {2D MATER},
journal = {2D MATERIALS},
volume = {5},
unique-id = {3390771},
issn = {2053-1583},
abstract = {Spin orbit interaction is strongly enhanced in structures where a heavy element is embedded in an inversion asymmetric crystal field. A simple way for realizing such a setup is to take a single atomic layer of a heavy element and encapsulate it between two atomic layers of different elemental composition. BiTeI is a promising candidate for such a 2D crystal. In its bulk form BiTeI consists of loosely coupled three atom thick layers where a layer of high atomic number Bi are sandwiched between Te and I sheets. Despite considerable recent attention to bulk BiTeI due to its giant Rashba spin splitting, the isolation of a single layer remained elusive. In this work we report the first successful isolation and characterization of a single layer of BiTeI using a novel exfoliation technique on stripped gold. Our scanning probe studies and first principles calculations show that the fabricated 100 mu m sized BiTeI flakes are stable at ambient conditions. Giant Rashba splitting and spin-momentum locking of this new 2D crystal opens the way towards novel spintronic applications and synthetic topological heterostructures.},
keywords = {AU; ENERGY; CRYSTALS; Graphene; Graphite; Rashba spin splitting; topological insulator; BiTeI; RASHBA; AU(111) SURFACE; DER-WAALS HETEROSTRUCTURES; SCANNING-TUNNELING-MICROSCOPE; stripped gold exfoliation; van der Waals heterostructures},
year = {2018},
eissn = {2053-1583},
orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Koltai, János/0000-0003-2576-9740; Oroszlány, László/0000-0001-5682-6424; Tóvári, Endre/0000-0002-0000-3805; Bordács, Sándor/0000-0003-0420-5997; Tapasztó, Levente/0000-0002-9377-8465}
}
@article{MTMT:3122457,
title = {The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy},
url = {https://m2.mtmt.hu/api/publication/3122457},
author = {Vancsó, Péter and Magda, Gábor Zsolt and Pető, János and Noh, JY and Kim, YS and Hwang, C and Biró, László Péter and Tapasztó, Levente},
doi = {10.1038/srep29726},
journal-iso = {SCI REP},
journal = {SCIENTIFIC REPORTS},
volume = {6},
unique-id = {3122457},
issn = {2045-2322},
abstract = {MoS2 single layers have recently emerged as strong competitors of graphene in electronic and optoelectronic device applications due to their intrinsic direct bandgap. However, transport measurements reveal the crucial role of defect-induced electronic states, pointing out the fundamental importance of characterizing their intrinsic defect structure. Transmission Electron Microscopy (TEM) is able to image atomic scale defects in MoS2 single layers, but the imaged defect structure is far from the one probed in the electronic devices, as the defect density and distribution are substantially altered during the TEM imaging. Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly resolve a high intrinsic concentration of individual sulfur atom vacancies, and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations. Experimental data on the intrinsic defect structure and the associated defect-bound electronic states that can be directly used for the interpretation of transport measurements are essential to fully understand the operation, reliability and performance limitations of realistic electronic devices based on MoS2 single layers.},
year = {2016},
eissn = {2045-2322},
orcid-numbers = {Vancsó, Péter/0000-0003-4333-9787; Biró, László Péter/0000-0001-7261-0420; Tapasztó, Levente/0000-0002-9377-8465}
}
@article{MTMT:2984284,
title = {Exfoliation of large-area transition metal chalcogenide single layers},
url = {https://m2.mtmt.hu/api/publication/2984284},
author = {Magda, Gábor Zsolt and Pető, János and Dobrik, Gergely and Hwang, C and Biró, László Péter and Tapasztó, Levente},
doi = {10.1038/srep14714},
journal-iso = {SCI REP},
journal = {SCIENTIFIC REPORTS},
volume = {5},
unique-id = {2984284},
issn = {2045-2322},
abstract = {Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically <10 um) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS2single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS2 crystal. Moreover, we found that our exfoliation process is not specific to MoS2, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides.},
year = {2015},
eissn = {2045-2322},
orcid-numbers = {Dobrik, Gergely/0000-0002-6690-274X; Biró, László Péter/0000-0001-7261-0420; Tapasztó, Levente/0000-0002-9377-8465}
}