@misc{MTMT:34719870,
	title = {Signature of pressure-induced topological phase transition in ZrTe5},
	url = {https://m2.mtmt.hu/api/publication/34719870},
	author = {Kovács-Krausz, Zoltán and Nagy, Dániel and Márffy, Albin Máté and Karpiak, Bogdan and Tajkov, Zoltán and Oroszlány, László and Koltai, János and Nemes Incze, Péter and Dash, Saroj P and Makk, Péter and Csonka, Szabolcs and Tóvári, Endre},
	unique-id = {34719870},
	abstract = {The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is in a weak TI phase in ambient conditions.},
	year = {2023},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Oroszlány, László/0000-0001-5682-6424; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Tóvári, Endre/0000-0002-0000-3805}
}

@article{MTMT:34428944,
	title = {Clean assembly of van der Waals heterostructures using silicon nitride membranes},
	url = {https://m2.mtmt.hu/api/publication/34428944},
	author = {Wang, Wendong and Clark, Nicholas and Hamer, Matthew and Carl, Amy and Tóvári, Endre and Sullivan-Allsop, Sam and Tillotson, Evan and Gao, Yunze and de Latour, Hugo and Selles, Francisco and Howarth, James and Castanon, Eli G. and Zhou, Mingwei and Bai, Haoyu and Li, Xiao and Weston, Astrid and Watanabe, Kenji and Taniguchi, Takashi and Mattevi, Cecilia and Bointon, Thomas H. and Wiper, Paul V. and Strudwick, Andrew J. and Ponomarenko, Leonid A. and Kretinin, Andrey V. and Haigh, Sarah J. and Summerfield, Alex and Gorbachev, Roman},
	doi = {10.1038/s41928-023-01075-y},
	journal-iso = {NAT ELECTRON},
	journal = {NATURE ELECTRONICS},
	volume = {6},
	unique-id = {34428944},
	abstract = {Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moiré superlattice homogeneity compared to conventional transfer techniques.},
	year = {2023},
	eissn = {2520-1131},
	pages = {https://doi.org/10.1038/s41928-023-01075-y},
	orcid-numbers = {Wang, Wendong/0000-0003-1045-7170; Clark, Nicholas/0000-0003-3351-5628; Carl, Amy/0000-0003-3601-1636; Tóvári, Endre/0000-0002-0000-3805; Sullivan-Allsop, Sam/0000-0002-8697-6922; Tillotson, Evan/0000-0002-6097-8794; Gao, Yunze/0000-0002-4925-9780; de Latour, Hugo/0000-0002-9050-8750; Selles, Francisco/0000-0001-8388-6190; Howarth, James/0000-0001-7434-9940; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Mattevi, Cecilia/0000-0003-0005-0633; Strudwick, Andrew J./0000-0002-7365-502X; Kretinin, Andrey V./0000-0003-4110-4837; Haigh, Sarah J./0000-0001-5509-6706; Summerfield, Alex/0000-0001-6091-3969; Gorbachev, Roman/0000-0003-3604-5617}
}

@article{MTMT:34207534,
	title = {Stabilizing the Inverted Phase of a WSe 2 /BLG/WSe 2 Heterostructure via Hydrostatic Pressure},
	url = {https://m2.mtmt.hu/api/publication/34207534},
	author = {Kedves, Máté and Szentpéteri, Bálint and Márffy, Albin Máté and Tóvári, Endre and Papadopoulos, Nikos and Rout, Prasanna K. and Watanabe, Kenji and Taniguchi, Takashi and Goswami, Srijit and Csonka, Szabolcs and Makk, Péter},
	doi = {10.1021/acs.nanolett.3c03029},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {23},
	unique-id = {34207534},
	issn = {1530-6984},
	year = {2023},
	eissn = {1530-6992},
	pages = {9508-9514},
	orcid-numbers = {Kedves, Máté/0000-0002-2057-4891; Tóvári, Endre/0000-0002-0000-3805; Papadopoulos, Nikos/0000-0002-9972-699X; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105}
}

@article{MTMT:34140921,
	title = {Thermopower in hBN/graphene/hBN superlattices},
	url = {https://m2.mtmt.hu/api/publication/34140921},
	author = {Guarochico-Moreira, Victor H. and Anderson, Christopher R. and Fal'ko, Vladimir and Grigorieva, Irina V. and Tóvári, Endre and Hamer, Matthew and Gorbachev, Roman and Liu, Song and Edgar, James H. and Principi, Alessandro and Kretinin, Andrey V. and Vera-Marun, Ivan J.},
	doi = {10.1103/PhysRevB.108.115418},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {108},
	unique-id = {34140921},
	issn = {2469-9950},
	year = {2023},
	eissn = {2469-9969},
	orcid-numbers = {Guarochico-Moreira, Victor H./0000-0001-8493-4940; Anderson, Christopher R./0000-0001-7224-8193; Fal'ko, Vladimir/0000-0003-0828-0310; Grigorieva, Irina V./0000-0001-5991-7778; Tóvári, Endre/0000-0002-0000-3805; Hamer, Matthew/0000-0003-3121-6536; Gorbachev, Roman/0000-0003-3604-5617; Edgar, James H./0000-0003-0918-5964; Vera-Marun, Ivan J./0000-0002-6347-580X}
}

@article{MTMT:33673970,
	title = {Revealing the band structure of ZrTe5 using multicarrier transport},
	url = {https://m2.mtmt.hu/api/publication/33673970},
	author = {Kovács-Krausz, Zoltán and Tóvári, Endre and Nagy, Dániel and Márffy, Albin Máté and Karpiak, Bogdan and Tajkov, Zoltán and Oroszlány, László and Koltai, János and Nemes Incze, Péter and Dash, Saroj P. and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1103/PhysRevB.107.075152},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {107},
	unique-id = {33673970},
	issn = {2469-9950},
	year = {2023},
	eissn = {2469-9969},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Tóvári, Endre/0000-0002-0000-3805; Karpiak, Bogdan/0000-0001-7462-8405; Oroszlány, László/0000-0001-5682-6424; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Dash, Saroj P./0000-0001-7931-4843}
}

@article{MTMT:33293455,
	title = {Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect},
	url = {https://m2.mtmt.hu/api/publication/33293455},
	author = {Sütő, Máté and Prok, Tamás and Makk, Péter and Kirti, Magdhi and Biasiol, Giorgio and Csonka, Szabolcs and Tóvári, Endre},
	doi = {10.1103/PhysRevB.106.235404},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {106},
	unique-id = {33293455},
	issn = {2469-9950},
	year = {2022},
	eissn = {2469-9969},
	orcid-numbers = {Sütő, Máté/0000-0003-2983-4490; Kirti, Magdhi/0000-0001-9490-1405; Biasiol, Giorgio/0000-0001-7974-5459; Tóvári, Endre/0000-0002-0000-3805}
}

@article{MTMT:32462636,
	title = {Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure.},
	url = {https://m2.mtmt.hu/api/publication/32462636},
	author = {Szentpéteri, Bálint and Rickhaus, Peter and de Vries, Folkert K and Márffy, Albin Máté and Fülöp, Bálint and Tóvári, Endre and Watanabe, Kenji and Taniguchi, Takashi and Kormányos, Andor and Csonka, Szabolcs and Makk, Péter},
	doi = {10.1021/acs.nanolett.1c03066},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {21},
	unique-id = {32462636},
	issn = {1530-6984},
	abstract = {Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.},
	keywords = {PRESSURE; Band structure; transport measurements; superlattice; continuum modeling; twisted double bilayer graphene},
	year = {2021},
	eissn = {1530-6992},
	pages = {8777-8784},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Tóvári, Endre/0000-0002-0000-3805; Kormányos, Andor/0000-0002-6837-6966}
}

@article{MTMT:32294722,
	title = {Boosting proximity spin–orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure},
	url = {https://m2.mtmt.hu/api/publication/32294722},
	author = {Fülöp, Bálint and Márffy, Albin Máté and Zihlmann, Simon and Gmitra, Martin and Tóvári, Endre and Szentpéteri, Bálint and Kedves, Máté and Watanabe, Kenji and Taniguchi, Takashi and Fabian, Jaroslav and Schönenberger, Christian and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1038/s41699-021-00262-9},
	journal-iso = {NPJ 2D MATER APPL},
	journal = {NPJ 2D MATERIALS AND APPLICATIONS},
	volume = {5},
	unique-id = {32294722},
	year = {2021},
	eissn = {2397-7132},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Zihlmann, Simon/0000-0001-5717-2063; Gmitra, Martin/0000-0003-1118-3028; Tóvári, Endre/0000-0002-0000-3805; Szentpéteri, Bálint/0000-0003-1587-1098; Kedves, Máté/0000-0002-2057-4891; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Schönenberger, Christian/0000-0002-5652-460X}
}

@article{MTMT:32210273,
	title = {In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr},
	url = {https://m2.mtmt.hu/api/publication/32210273},
	author = {Kocsis, Mátyás and Zheliuk, Oleksandr and Makk, Péter and Tóvári, Endre and Kun, Péter and Tereshchenko, Oleg Evgenevich and Kokh, Konstantin Aleksandrovich and Taniguchi, Takashi and Watanabe, Kenji and Ye, Jianting and Csonka, Szabolcs},
	doi = {10.1103/PhysRevResearch.3.033253},
	journal-iso = {PRRESEARCH},
	journal = {PHYSICAL REVIEW RESEARCH},
	volume = {3},
	unique-id = {32210273},
	year = {2021},
	eissn = {2643-1564},
	orcid-numbers = {Tóvári, Endre/0000-0002-0000-3805; Kun, Péter/0000-0002-9304-068X; Tereshchenko, Oleg Evgenevich/0000-0002-6157-5874; Watanabe, Kenji/0000-0003-3701-8119}
}

@article{MTMT:32130144,
	title = {New method of transport measurements on van der Waals heterostructures under pressure},
	url = {https://m2.mtmt.hu/api/publication/32130144},
	author = {Fülöp, Bálint and Márffy, Albin Máté and Tóvári, Endre and Kedves, Máté and Zihlmann, Simon and Indolese, David and Kovács-Krausz, Zoltán and Watanabe, Kenji and Taniguchi, Takashi and Schönenberger, Christian and Kézsmárki, István and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1063/5.0058583},
	journal-iso = {J APPL PHYS},
	journal = {JOURNAL OF APPLIED PHYSICS},
	volume = {130},
	unique-id = {32130144},
	issn = {0021-8979},
	year = {2021},
	eissn = {1089-7550},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Márffy, Albin Máté/0000-0002-5652-460X; Tóvári, Endre/0000-0002-0000-3805; Kedves, Máté/0000-0002-2057-4891; Zihlmann, Simon/0000-0001-5717-2063; Indolese, David/0000-0002-9436-8994; Kovács-Krausz, Zoltán/0000-0001-5821-6195; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Kézsmárki, István/0000-0003-4706-3247; Makk, Péter/0000-0001-7637-4672; Csonka, Szabolcs/0000-0003-0505-2806}
}