TY - CONF AU - Bein, Márton AU - Bornoff, Robin AU - Farkas, Gábor AU - Gaal, Lajos AU - Poppe, András AU - Kerecsen Istvánné Rencz, Márta TI - Measurement-Based Multi-Domain Modeling of LEDs for “Industry 4.0” T2 - Proceedings of The 18th Intersociety Conference on Thermomechanical Phenomena in Electronic Systems (ITHERM'19) PB - IEEE C1 - Las Vegas (NV) PY - 2019 SP - 23 EP - 30 PG - 8 DO - 10.1109/ITHERM.2019.8757371 UR - https://m2.mtmt.hu/api/publication/30881278 ID - 30881278 AB - The Industry 4.0 initiative targets the digitalization of design and manufacturing processes. The aim of the Delphi4LED project is to trigger this transition in the solid-state lighting industry by developing testing and modelling methodologies aimed at multi-domain characterization of LED based products. The multi-domain model sums up the following parts: the electrical and optical domain is based on semiconductor physics, for the latter the key is the balance of diffusion and recombination effects realistically representing the low-current and high-current decay of efficiency. The geometry domain defines the thermal boundary and supposed to be temperature independent. For the thermal domain compact modeling and model order reduction are discussed; the suggested model is based on the one previously proposed in DELPHI project. Finally a new JEDEC standard is proposed encompassing multiple thermal test environments for a power LED which enable identifying case boundaries. LA - English DB - MTMT ER - TY - CHAP AU - Farkas, Gábor AU - Lajos, Gaál AU - Bein, Márton AU - Poppe, András AU - Ress, Sándor László AU - Kerecsen Istvánné Rencz, Márta ED - Jeffrey, C Suhling TI - LED Characterization within the Delphi4LED Project T2 - Proceedings of The 17th Intersociety Conference on Thermomechanical Phenomena in Electronic Systems (ITHERM'18) PB - IEEE CY - San Diego (CA) SN - 9781538612729 PY - 2018 SP - 262 PG - 9 DO - 10.1109/ITHERM.2018.8419602 UR - https://m2.mtmt.hu/api/publication/3378564 ID - 3378564 N1 - The work described here has received funding from the European Union’s Horizon 2020 research and innovation program through the H2020 ECSEL project Delphi4LED (grant agreement 692465). Co-financing of the Delphi4LED project by the Hungarian government through the NEMZ_16-1-2017-0002 grant is also acknowledged. Befoglaló mű WoS és MTMT megnevezése nem azonos. Az MTMT-ben standardizált konferenciamegnevezéssel lett a befoglaló mű rögzítve. WoS:hiba:000467263000039 2020-08-29 12:48 befoglaló egyiknél nincsenek szerzők, befoglaló cím nem egyezik AB - The European Delphi4LED consortium intensively works on measurement, modeling and simulation techniques to cope with the lack of standardized methodologies to describe the strongly temperature and current dependent characteristics of LEDs. The paper presents some of the efforts and results in making the lighting design of luminaires an automated, model based process; similarly to the design practice in electronics. To achieve this target, validated and standardized multiphysics LED models are needed. In this paper results in comparing standard LED measurement methods and the realized upgraded testing and modeling procedures are shown, as the authors see it after one and half year of intensive collaboration in the subject. LA - English DB - MTMT ER - TY - CHAP AU - Hantos, Gusztáv AU - Hegedüs, János AU - Bein, Márton AU - L, Gaál AU - Farkas, Gábor AU - Sárkány, Zoltán AU - Ress, Sándor László AU - Poppe, András AU - Kerecsen Istvánné Rencz, Márta ED - IEEE, null TI - Measurement issues in LED characterization for Delphi4LED style combined electrical-optical-thermal LED modeling T2 - 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC) PB - IEEE CY - New York, New York SN - 9781538630426 PY - 2017 PG - 7 DO - 10.1109/EPTC.2017.8277493 UR - https://m2.mtmt.hu/api/publication/3285479 ID - 3285479 AB - Traditionally incandescent and fluorescent light sources were mostly used in a single operation point and their relevant characteristics was described by a few parameters in a datasheet. The emitted light of LED products depends on current and temperature heavily and the behavior of LEDs in actual use can be predicted only by complex models of physical roots. The paper summarizes the targets and methodology of the European Delphi4LED project aiming the elaboration of relevant measurements for identifying parameters of electrical-optical-thermal LED models. Measurement examples of high power LEDs are shown and the state-of-art of the modeling efforts is demonstrated in case studies. The two-diode Spice-like electro-thermal-optical model of LEDs is proposed to be extended with a serial resistor in the branch describing the light emission. LA - English DB - MTMT ER - TY - CHAP AU - Bein, Márton AU - Hegedüs, János AU - Hantos, Gusztáv AU - Gaál, Lajos AU - Farkas, Gábor AU - Kerecsen Istvánné Rencz, Márta AU - Poppe, András ED - W, Luiten ED - J, Janssen ED - G, Martin TI - Comparison of Two Alternate Junction Temperature Setting Methods aimed for Thermal and Optical Testing of High Power LEDs T2 - 2017 23rd International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'17) PB - IEEE CY - Amsterdam SN - 9781538619285 PY - 2017 EP - 4 PG - 4 DO - 10.1109/THERMINIC.2017.8233838 UR - https://m2.mtmt.hu/api/publication/3257748 ID - 3257748 N1 - Funding Agency and Grant Number: European Union's Horizon 2020 research and innovation programme through the H2020 ECSEL project Delphi4LED [692465]; Delphi4LED project by the Hungarian government of the National Research, Development and Innovation Fund [NEMZ_16-1-2017-0002] Funding text: The work described here has received funding from the European Union's Horizon 2020 research and innovation programme through the H2020 ECSEL project Delphi4LED (grant agreement 692465). Co-financing of the Delphi4LED project by the Hungarian government through the NEMZ_16-1-2017-0002 grant of the National Research, Development and Innovation Fund is also acknowledged. AB - Characterization of LEDs and other semiconductor devices demands at least accurate junction temperature (Tj) monitoring and also control in more sophisticated cases. One of the most common causes is that in practical LED lighting appliances “hot lumens” are meaningful – most lamps are used in power on steady state and cold analysis provides only indirect information about intended operation. On the other hand direct TJ measurement is not trivial – the most viable way is to measure the forward voltage (VF) which is a function of junction temperature. In this paper we compare two ways of VF- based TJ regulation of LEDs capable for electrical-optical- thermal characterization in a single session in terms of accuracy and time consumption. LA - English DB - MTMT ER - TY - CHAP AU - Farkas, Gábor AU - Bein, Márton AU - Lajos, Gaál ED - Poppe, András TI - Multi domain modelling of power LEDs based on measured isothermal and transient I-V-L characteristics T2 - 2016 22nd International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'16) PB - IEEE CY - New York, New York SN - 9781509054503 PY - 2016 SP - 181 EP - 186 PG - 6 DO - 10.1109/THERMINIC.2016.7749049 UR - https://m2.mtmt.hu/api/publication/3213229 ID - 3213229 AB - Recent research has already proved that the characteristics of LED systems can be analyzed creating multi-domain models with tightly coupled electrical, thermal and optical operation. Transient models of the electric and thermal effects have been already successfully established but experimental verification of the dynamic optical behavior was neglected as fast radiometric and photometric measurements have not been available. The present paper outlines two measurement techniques which extend the methodology towards radiometric transients, calibrated by isothermal results. It proposes adequate instrumentation and highlights metrology problems through a measurement example. LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Bein, Márton AU - J, Lappalainen AU - Juhász, László AU - Plesz, Balázs TI - The Phonsistor – A Novel VO2 Based Nanoscale Thermal-electronic Device and Its Application in Thermal-electronic Logic Circuits (TELC) JF - MATERIALS TODAY: PROCEEDINGS J2 - MATER TOD PROC VL - 2 PY - 2015 IS - 8 SP - 4272 EP - 4279 PG - 8 SN - 2214-7853 DO - 10.1016/j.matpr.2015.09.013 UR - https://m2.mtmt.hu/api/publication/2984697 ID - 2984697 N1 - Budapest University of Technology and Economics, Department of Electron Devices, Budapest, H-1521, Hungary University of Oulu, Department of Electrical Engineering, P.O. Box 4500, Oulu, FIN-90014, Finland Cited By :9 Export Date: 21 September 2022 Correspondence Address: Mizsei, J.; Budapest University of Technology and Economics, Hungary; email: mizsei@eet.bme.hu AB - The continuous development of electronics has been characterized by Moore's law. Although the current CMOS integrated circuit development is driven by a lot of innovations, there are still some limits determined by unavoidable physical effects. There are many new ideas for building atomic or molecular scale devices for the information technology, but there is still a gap between CMOS technology and novel devices. The recently proposed thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) may help to fill this gap. The operation is based on the semiconductor-metal transition (SMT) effect shown by certain materials, for example VO2. The switches can be excited by electronic and thermal signals as well, thus two different physical parameters are available for representing the logic states. A proof of concept for the device operation has been demonstrated, and device scaling and integration issues will be discussed too. LA - English DB - MTMT ER - TY - JOUR AU - Mizsei, János AU - Bein, Márton AU - J, Lappalainen AU - Juhász, László TI - Thermal-electronic logic circuits: Scaling down JF - MICROELECTRONICS JOURNAL J2 - MICROELECTRON J VL - 46 PY - 2015 IS - 12 A SP - 1175 EP - 1178 PG - 4 SN - 0026-2692 DO - 10.1016/j.mejo.2015.10.003 UR - https://m2.mtmt.hu/api/publication/2976582 ID - 2976582 N1 - Budapest University of Technology and Economics, Department of Electron Devices, Budapest, H-1521, Hungary Microelectronics and Materials Physics Laboratories, University of Oulu, Linnanmaa, Oulu, FIN-90570, Finland Cited By :6 Export Date: 21 September 2022 CODEN: MICEB Correspondence Address: Mizsei, J.; Budapest University of Technology and Economics, Hungary; email: mizsei@eet.bme.hu LA - English DB - MTMT ER - TY - CHAP AU - Mizsei, János AU - Bein, Márton AU - Juhász, László AU - Jelinek, Éva ED - Franz, M ED - Krammer, O ED - Nicolics, J ED - Wohlrabe, H TI - Thermal-electronic devices and thermal-electronic logic circuits (TELC) T2 - 38th International Spring Seminar on Electronics Technology (ISSE) PB - IEEE CY - Piscataway (NJ) SN - 9781479988600 T3 - International Spring Seminar on Electronics Technology ISSE, ISSN 2161-2536 PY - 2015 SP - 61 EP - 65 PG - 5 DO - 10.1109/ISSE.2015.7247963 UR - https://m2.mtmt.hu/api/publication/2954107 ID - 2954107 N1 - Cited By :3 Export Date: 21 September 2022 AB - The core of this work is to introduce a new electro-thermal device operation principle based on a thermally controlled temperature sensitive component. General conditions for operation and results from practical realization are summarized for this new functional thermal-electronic device (phonsistor) and the CMOS compatible thermal-electronic logic circuit (TELC) formed of phonsistors. Our experimental TELC devices has been realized in lateral form using thin VO2 layers on oxidized silicon substrate and thin platinum layers as metallization and contact electrodes. LA - English DB - MTMT ER - TY - CHAP AU - Mizsei, János AU - Bein, Márton AU - Jyrki, Lappalainen AU - Juhász, László ED - Chris, Bailey ED - Bernhard, Wunderle ED - Sebastian, Volz TI - Thermal-Electronic Circuits: Basics, Simulations, Experiments T2 - 2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) PB - IEEE CY - New York, New York SN - 9781467397063 PY - 2015 PG - 6 DO - 10.1109/THERMINIC.2015.7389599 UR - https://m2.mtmt.hu/api/publication/2953874 ID - 2953874 N1 - Budapest University of Technology and Economics, Budapest, Hungary University of Oulu, Oulu, Finland Cited By :2 Export Date: 21 September 2022 Correspondence Address: Mizsei, J.; Budapest University of Technology and EconomicsHungary; email: mizsei@eet.bme.hu AB - Semiconductor devices are sensitive on temperature, and they produce a lot of heat because of the high power density. Therefore thermal effects have high importance in the operation of the semiconductor based microsystems. The thermal management has key importance in the microsystem construction, however thermal effects has been treated as parasitic phenomena until now. Recent research demonstrated that beside the electrical signal the thermal signal can also be treated as logic variable. In order to get closer to both the construction aspects and modeling questions of thermal-electronic devices lateral thin film semiconductor devices were constructed by laser ablation (vanadium dioxide, VO2) and cathode sputtering technology (Pt electrodes). The high temperature sensitivity of semiconductor-metal transition (SMT) semiconductor resulted in promising switching characteristics. A model was constructed and thermal-electric simulations were performed; the results are in good correlation with the measurements validating both the model and the explanation of the behavior. LA - English DB - MTMT ER - TY - CHAP AU - Attila, Szel AU - Sárkány, Zoltán AU - Bein, Márton AU - Robin, Bornoff AU - Vass-Várnai, András AU - Kerecsen Istvánné Rencz, Márta ED - Paul, Wesling TI - Lifetime estimation of power electronics modules considering the target application T2 - Proceedings of the 31st IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM'15) PB - IEEE CY - New York, New York SN - 9781479986002 PY - 2015 SP - 332 EP - 335 PG - 4 DO - 10.1109/SEMI-THERM.2015.7100183 UR - https://m2.mtmt.hu/api/publication/2911949 ID - 2911949 LA - English DB - MTMT ER -