@{MTMT:33589490,
	title = {The Use of Thermal Transient Testing},
	url = {https://m2.mtmt.hu/api/publication/33589490},
	author = {Kerecsen Istvánné Rencz, Márta and Farkas, Gábor and Sárkány, Zoltán and Vass-Várnai, András},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_7},
	unique-id = {33589490},
	year = {2022},
	pages = {319-352},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:33589441,
	title = {Thermal Transient Measurements on Various Electronic Components},
	url = {https://m2.mtmt.hu/api/publication/33589441},
	author = {Farkas, Gábor and Poppe, András and Sárkány, Zoltán and Vass-Várnai, András},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_6},
	unique-id = {33589441},
	year = {2022},
	pages = {209-318},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716}
}

@inproceedings{MTMT:32765962,
	title = {Rapid Assessment of Semiconductor Thermal Quality},
	url = {https://m2.mtmt.hu/api/publication/32765962},
	author = {Wong, Voon Hon and Vass-Várnai, András and Caruso, Antonio and Cho, Young Joon and Lee, Yong Seoung and Lee, Kwon Hyung},
	booktitle = {2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
	doi = {10.1109/IPFA53173.2021.9617427},
	unique-id = {32765962},
	abstract = {The performance and reliability of an IC Package will be affected by die attach defects such as voids, cracks and delaminations. In this paper, a novel Thermal Quality Tester is presented. It allows for non-intrusive and non-destructive tests of the samples within a very short period of time. Thermal transient tests are used to determine the thermal impedance and structure function curves of the samples. The samples can then be binned according to their thermal performance. Thermal simulations of the samples are used to provide information for the binning process. The concepts for this tester will be presented along with test sample measurements.},
	keywords = {Voids; Structure functions; Thermal impedance; Thermal simulations; Thermal transient tests},
	year = {2021},
	pages = {1-6}
}

@inproceedings{MTMT:32765939,
	title = {Detection Of Die Attach Defects Through Rapid Thermal Transient Tests},
	url = {https://m2.mtmt.hu/api/publication/32765939},
	author = {Wong, Voon Hon and Vass-Várnai, András and Caruso, Antonio and Hara, Tomoaki and Hsu, Alvin and Wang, Gang},
	booktitle = {2021 International Conference on Electronics Packaging (ICEP)},
	doi = {10.23919/ICEP51988.2021.9451916},
	unique-id = {32765939},
	abstract = {The presence die attach defects such as voids and delaminations in a semiconductor device will lead to increased junction temperatures and premature failure of the device. In this paper, a thermal quality testing method is presented which allows for the rapid detection of die attach defects and sorting of the production samples. The methodology is a combination of thermal transient tests for thermal characterization and 3D CFD simulations.},
	keywords = {CFD; Structure functions; Thermal impedance; DIE ATTACH; Thermal transient tests},
	year = {2021},
	pages = {117-118}
}

@inproceedings{MTMT:32236544,
	title = {Suggestions for Extending the Scope of the Transient Dual Interface Method},
	url = {https://m2.mtmt.hu/api/publication/32236544},
	author = {Poppe, András and Vass-Várnai, András and Sárkány, Zoltán and Kerecsen Istvánné Rencz, Márta and Hantos, Gusztáv and Farkas, Gábor},
	booktitle = {Proceedings of the 27th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC'21 online)},
	doi = {10.1109/THERMINIC52472.2021.9626508},
	unique-id = {32236544},
	abstract = {A decade ago the JEDEC JESD51-14 standard was a real breakthrough in the thermal measure¬ments of semiconductor devices. This standard introduces the Transient Dual (thermal) Interface Method (TDIM) for the measurement of the junction to case thermal resistance (RthJC) of power device packages with a single dominant heat-flow path through an exposed cooling surface.
		
		The recommendations of the standard are based on experiences obtained from many numerical and physical experiments performed typically on power devices in small packages such as TO types. The precise test procedure descriptions, however, seem to be too restrictive for large modules, power LED constructions and other.
		
		The aim of this paper is to examine package types for which a TDIM based RthJC measurement is feasible and to identify how the recommendations of the present JESD51-14 standard could be extended to these package types, keeping the merits of the present methodology. Moreover, it is investigated how the TDIM method can be extended to the measurement of other standard thermal metrics, such as the junction to pin thermal resistance.},
	year = {2021},
	pages = {23-30},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853; Hantos, Gusztáv/0000-0002-0401-2098}
}

@inproceedings{MTMT:31322686,
	title = {An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes},
	url = {https://m2.mtmt.hu/api/publication/31322686},
	author = {Vass-Várnai, András and Cho, Y.J. and Farkas, Gábor and Kerecsen Istvánné Rencz, Márta},
	booktitle = {2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA)},
	doi = {10.23919/IPEC.2018.8507995},
	unique-id = {31322686},
	abstract = {To determine the thermal properties of power semiconductor devices and structures, the JEDEC JESD 51-1 static, electrical test method is a well-known and industry-wide accepted technique. The approach provides accurate and repeatable results in case of silicon based transistors in all cases. For certain compound semiconductor components, such as SiC MOSFET-s and GaN HEMT structures, the application of the electrical test method becomes in some cases challenging. If traditional test setups are used, in the unit step response function, due to parasitic effects, an electric signal may superpose on the thermal signal of interest, making it hard or even impossible to analyze the test results. If the structure has a physical diode as well, it can be used to understand the thermal properties of the package and its layers. This information can be applied in another step to gather the thermal properties from die transistors' point of view as well, without measuring it. In this article we show a combined measurement and simulation based method, which allows the accurate thermal characterization of such components, even in cases when other approaches may fail. © 2018 IEEJ Industry Application Society.},
	keywords = {wide band gap semiconductors; III-V semiconductors; high electron mobility transistors; silicon carbide; Semiconductor device structures; Thermodynamic properties; Semiconducting silicon compounds; POWER SEMICONDUCTORS; Semiconducting gallium compounds; Thermal transient testing; Thermal transient testing; Structure functions; Structure functions; compound semiconductors; power semiconductor; Thermal characterization; Electric insulation testing; MOSFET devices; Power semiconductor diodes; Power transistors; Combined measurements; Silicon-based transistors; Unit step response function},
	year = {2018},
	pages = {137-141},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@mastersthesis{MTMT:3412157,
	title = {New Methods for the Investigation of Modern Electronics Packaging Materials Using Thermal Transient Measurements},
	url = {https://m2.mtmt.hu/api/publication/3412157},
	author = {Vass-Várnai, András},
	publisher = {Budapest University of Technology and Economics},
	unique-id = {3412157},
	year = {2017}
}

@inproceedings{MTMT:3177301,
	title = {Detailed analysis of IC packages using thermal transient testing and CFD modelling for communication device applications},
	url = {https://m2.mtmt.hu/api/publication/3177301},
	author = {Fang, Yake and Wang, Gang and Xiaodan, Chen and Wong, Voon Hon and Xing, Fu and Vass-Várnai, András},
	booktitle = {2016 22nd International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'16)},
	doi = {10.1109/THERMINIC.2016.7749046},
	unique-id = {3177301},
	year = {2016},
	pages = {164-168}
}

@inproceedings{MTMT:2911949,
	title = {Lifetime estimation of power electronics modules considering the target application},
	url = {https://m2.mtmt.hu/api/publication/2911949},
	author = {Attila, Szel and Sárkány, Zoltán and Bein, Márton and Robin, Bornoff and Vass-Várnai, András and Kerecsen Istvánné Rencz, Márta},
	booktitle = {Proceedings of the 31st IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM'15)},
	doi = {10.1109/SEMI-THERM.2015.7100183},
	unique-id = {2911949},
	year = {2015},
	pages = {332-335},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@inproceedings{MTMT:2911926,
	title = {Mission profile driven component design for adjusting product lifetime on system level},
	url = {https://m2.mtmt.hu/api/publication/2911926},
	author = {Attila, Szel and Sárkány, Zoltán and Bein, Márton and Robin, Bornoff and Vass-Várnai, András and Kerecsen Istvánné Rencz, Márta},
	booktitle = {Proceedings of International Conference on Electronics Packaging},
	doi = {10.1109/ICEP-IAAC.2015.7111041},
	unique-id = {2911926},
	year = {2015},
	pages = {385-389},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}