@inproceedings{MTMT:34448273,
	title = {Thermal Transient Tests with Programmed Powering on Wide Bandgap Power Devices of Non-Monotonous and Time-Variant Characteristics},
	url = {https://m2.mtmt.hu/api/publication/34448273},
	author = {Ress, Sándor László and Sárkány, Zoltán and Kerecsen Istvánné Rencz, Márta and Farkas, Gábor},
	booktitle = {2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)},
	doi = {10.1109/THERMINIC60375.2023.10325869},
	unique-id = {34448273},
	abstract = {Thermal transient testing of semiconductor devices needs a well-defined power level for heating and proper data acquisition for recording the change of a thermally sensitive device parameter. While the latter is fully solved by up-to-date thermal testers, power level setting is typically limited to forcing varying current levels on two pin devices, such as diodes. Other proposed methods need trials for setting the power and have poor stability.The paper presents a methodology for applying power in various test arrangements, on devices with three pins such as MOSFETs, IGBTs, BJTs and HEMTs. A simple analog circuitry is proposed which ensures thermally and electrically stable powering and an exact operating voltage and current.Several simulation and measurement experiments prove that a novel solution based on fast drain-source voltage change at constant current ensures optimal powering in reliability tests and short electric distortion in transient tests. © 2023 IEEE.},
	keywords = {wide band gap semiconductors; high electron mobility transistors; Data acquisition; Energy gap; MOSFETS; Transient analysis; Thermal transient testing; Thermal transient testing; Reliability testing; Reliability testing; well testing; MOSFET; High power; High power; Wide-band-gap semiconductors; Drain current; Power levels; Power MOSFET; MOS-FET; Wide-band-gap semiconductor; Thermal transients; Transient tests},
	year = {2023},
	orcid-numbers = {Ress, Sándor László/0000-0003-4611-0718; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:33589490,
	title = {The Use of Thermal Transient Testing},
	url = {https://m2.mtmt.hu/api/publication/33589490},
	author = {Kerecsen Istvánné Rencz, Márta and Farkas, Gábor and Sárkány, Zoltán and Vass-Várnai, András},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_7},
	unique-id = {33589490},
	year = {2022},
	pages = {319-352},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:33589441,
	title = {Thermal Transient Measurements on Various Electronic Components},
	url = {https://m2.mtmt.hu/api/publication/33589441},
	author = {Farkas, Gábor and Poppe, András and Sárkány, Zoltán and Vass-Várnai, András},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_6},
	unique-id = {33589441},
	year = {2022},
	pages = {209-318},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716}
}

@{MTMT:33589426,
	title = {Fundamentals of Thermal Transient Measurements},
	url = {https://m2.mtmt.hu/api/publication/33589426},
	author = {Farkas, Gábor},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_5},
	unique-id = {33589426},
	year = {2022},
	pages = {171-208}
}

@{MTMT:33589413,
	title = {Temperature-Dependent Electrical Characteristics of Semiconductor Devices},
	url = {https://m2.mtmt.hu/api/publication/33589413},
	author = {Farkas, Gábor},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_4},
	unique-id = {33589413},
	year = {2022},
	pages = {139-169}
}

@{MTMT:33589399,
	title = {Thermal Metrics},
	url = {https://m2.mtmt.hu/api/publication/33589399},
	author = {Poppe, András and Farkas, Gábor},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_3},
	unique-id = {33589399},
	year = {2022},
	pages = {97-137},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716}
}

@{MTMT:33589207,
	title = {Theoretical Background of Thermal Transient Measurements},
	url = {https://m2.mtmt.hu/api/publication/33589207},
	author = {Farkas, Gábor and Poppe, András and Kerecsen Istvánné Rencz, Márta},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_2},
	unique-id = {33589207},
	year = {2022},
	pages = {7-96},
	orcid-numbers = {Poppe, András/0000-0002-9381-6716; Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@{MTMT:33589178,
	title = {Why Was Written and How to Read This Book},
	url = {https://m2.mtmt.hu/api/publication/33589178},
	author = {Kerecsen Istvánné Rencz, Márta and Farkas, Gábor},
	booktitle = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	doi = {10.1007/978-3-030-86174-2_1},
	unique-id = {33589178},
	year = {2022},
	pages = {1-5},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}

@book{MTMT:33589137,
	title = {Theory and Practice of Thermal Transient Testing of Electronic Components},
	url = {https://m2.mtmt.hu/api/publication/33589137},
	isbn = {9783030861735},
	doi = {10.1007/978-3-030-86174-2},
	editor = {Kerecsen Istvánné Rencz, Márta and Farkas, Gábor and Poppe, András},
	publisher = {Springer Netherlands},
	unique-id = {33589137},
	year = {2022},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853; Poppe, András/0000-0002-9381-6716}
}

@inproceedings{MTMT:33085919,
	title = {Thermal Transient Testing Alternatives for the Characterisation of GaN HEMT Power Devices},
	url = {https://m2.mtmt.hu/api/publication/33085919},
	author = {Sárkány, Zoltán and Musolino, Mattia and Sitta, Alessandro and Calabretta, Michele and Farkas, Gábor and Németh, Márk and Kerecsen Istvánné Rencz, Márta},
	booktitle = {Proceedings of the 28th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'22)},
	unique-id = {33085919},
	abstract = {Despite all the advancements, thermal characterization of GaN HEMT devices is still a challenging task today. In this paper we present a new transient measurement approach utilizing the gate current as temperature sensitive electric parameter (TSEP) and compare the results to the data captured using the channel resistance (Vds). The experienced differences are small, but repeatable. We examine the various factors that could cause artifacts in each method, but no evidence of measurement error was found.},
	year = {2022},
	orcid-numbers = {Kerecsen Istvánné Rencz, Márta/0000-0003-4183-3853}
}