@article{MTMT:34714394,
	title = {Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature},
	url = {https://m2.mtmt.hu/api/publication/34714394},
	author = {Baji, Zsófia and Pécz, Béla and Fogarassy, Zsolt and Szabó, Zoltán and Cora, Ildikó},
	doi = {10.1016/j.tsf.2024.140267},
	journal-iso = {THIN SOLID FILMS},
	journal = {THIN SOLID FILMS},
	volume = {794},
	unique-id = {34714394},
	issn = {0040-6090},
	abstract = {Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity.},
	keywords = {Atomic layer deposition; Thermal annealing; Pyrrhotite; Iron sulphide},
	year = {2024},
	eissn = {1879-2731},
	orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237; Szabó, Zoltán/0000-0002-2150-1459}
}

@article{MTMT:34714097,
	title = {Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack},
	url = {https://m2.mtmt.hu/api/publication/34714097},
	author = {Fogarassy, Zsolt and Wójcicka, Aleksandra and Cora, Ildikó and Rácz, Adél Sarolta and Grzanka, Szymon and Dodony, Erzsébet and Perlin, Piotr and Borysiewicz, Michał A.},
	doi = {10.1016/j.mssp.2024.108250},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {175},
	unique-id = {34714097},
	issn = {1369-8001},
	abstract = {In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34653875,
	title = {Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition},
	url = {https://m2.mtmt.hu/api/publication/34653875},
	author = {Galizia, Bruno and Fiorenza, Patrick and Schilirò, Emanuela and Pécz, Béla and Fogarassy, Zsolt and Greco, Giuseppe and Saggio, Mario and Cascino, Salvatore and Lo, Nigro Raffaella and Roccaforte, Fabrizio},
	doi = {10.1016/j.mssp.2024.108244},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {174},
	unique-id = {34653875},
	issn = {1369-8001},
	abstract = {Stacked aluminum oxide/aluminum nitride (Al2O3/AlN) layers were deposited on n-type (0001) 4H–SiC by atomic layer deposition (ALD) processes. The structural and chemical properties have been investigated and are consistent with the growth of ∼9 nm oriented (0001) AlN layer, and an upper 20 nm amorphous Al2O3 layer. The entire Al2O3/AlN stack was electrically characterized and compared with respect to a single Al2O3 layer having the same total thickness. The Al2O3/AlN bilayer exhibited a higher dielectric constant (κ = 8.7), a significant reduction of the oxide trapped charges (NOT) from 7.8 × 1012 to 1.8 × 1012 cm−2, as well as a decrease of a factor 2 of the interface traps density (Dit) compared with the Al2O3 single layer values. A large positive flat band voltage shift was observed in the C–V curves acquired on MIS capacitors. The comparison of the behaviour of MIS capacitors fabricated on both n-type and p-type 4H–SiC demonstrated that deep interface states (near the 4H–SiC mid gap) acting as acceptors or donors for the n-type and p-type MIS contribute to the observed behavior. This hypothesis has been also corroborated by TCAD simulations.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34193521,
	title = {Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)},
	url = {https://m2.mtmt.hu/api/publication/34193521},
	author = {Galizia, Bruno and Fiorenza, Patrick and Bongiorno, Corrado and Pécz, Béla and Fogarassy, Zsolt and Schilirò, Emanuela and Giannazzo, Filippo and Roccaforte, Fabrizio and Nigro, Raffaella Lo},
	doi = {10.1016/j.mee.2023.112103},
	journal-iso = {MICROELECTRON ENG},
	journal = {MICROELECTRONIC ENGINEERING},
	volume = {283},
	unique-id = {34193521},
	issn = {0167-9317},
	year = {2024},
	eissn = {1873-5568},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34538351,
	title = {Tungsten Carbide Nanolayer Formation by Ion Beam Mixing with Argon and Xenon Ions for Applications as Protective Coatings},
	url = {https://m2.mtmt.hu/api/publication/34538351},
	author = {Rácz, Adél Sarolta and Kun, Péter and Kerner, Zsolt Gábor and Fogarassy, Zsolt and Menyhárd, Miklós},
	doi = {10.1021/acsanm.2c05505},
	journal-iso = {ACS APPL NANO MATER},
	journal = {ACS APPLIED NANO MATERIALS},
	volume = {6},
	unique-id = {34538351},
	year = {2023},
	eissn = {2574-0970},
	pages = {3816-3824},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Menyhárd, Miklós/0000-0003-4581-5337}
}

@CONFERENCE{MTMT:34487420,
	title = {DIFFRAKCIÓS INTENZITÁS MÉRÉSEK TEM-BEN II.: AZ EWALD KORREKCIÓ KITERJESZTÉSE. Diffracted intensity measurements in TEM II.: Extension of the Ewald correction},
	url = {https://m2.mtmt.hu/api/publication/34487420},
	author = {Dodony, Erzsébet and Dódony, István and Fogarassy, Zsolt and Pekker, Péter and Sáfrán, György},
	booktitle = {A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023},
	unique-id = {34487420},
	year = {2023},
	pages = {28-31},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pekker, Péter/0000-0002-0463-0742; Sáfrán, György/0000-0003-3708-3551}
}

@CONFERENCE{MTMT:34487369,
	title = {A γ -NIKKEL-SZILICID SZERKEZETI VÁLTOZATOSSÁGA. Structural variability of the γ-nickel-silicide},
	url = {https://m2.mtmt.hu/api/publication/34487369},
	author = {Dodony, Erzsébet and Dódony, István and Fogarassy, Zsolt and Pekker, Péter and Sáfrán, György},
	booktitle = {A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023},
	unique-id = {34487369},
	year = {2023},
	pages = {26-28},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pekker, Péter/0000-0002-0463-0742; Sáfrán, György/0000-0003-3708-3551}
}

@article{MTMT:34120023,
	title = {Decisive role of Cu/Co interfaces in copper cobaltite derivatives for high performance CO2 methanation catalyst},
	url = {https://m2.mtmt.hu/api/publication/34120023},
	author = {Varga, Gábor and Szenti, Imre and Kiss, János and Baán, Kornélia and Halasi, Gyula and Óvári, László and Szamosvölgyi, Ákos and Mucsi, Róbert and Dodony, Erzsébet and Fogarassy, Zsolt and Pécz, Béla and Olivi, Luca and Sápi, András and Kukovecz, Ákos and Kónya, Zoltán},
	doi = {10.1016/j.jcou.2023.102582},
	journal-iso = {J CO2 UTIL},
	journal = {JOURNAL OF CO2 UTILIZATION},
	volume = {75},
	unique-id = {34120023},
	issn = {2212-9820},
	abstract = {Thermo-catalytic bio-SNG (CH4) production is one of the useful tools for converting waste to gaseous fuels through CO2 conversion. To abundant properly, however, efficient, robust and cost-effective catalysts would be required. Bimetallic systems based on transition metals seem to be promising candidates for this task. The CoCu bimetallic system with in-situ generated interfaces was synthesized and used as a catalyst for CO2 methanation. The in-depth analysis of the structure-activity-selectivity relationships involving XRD, (NAP-)XPS, EXAFS and TEM-EDX revealed that the co-existence of Co0, CoO, and Cu0 in the proper distribution on the surface can ensure the selective production of methane. To fine-tune the surface composition of the bimetallic systems, a systematic alteration of the Cu:Co ratio in the precursor spinel structures must be performed. Cu0.4Co2.6O4 derivative, stabilizing subsurface Cu(I)–O specimen, showed the best performance with high activity (12,800 nmol g–1 s–1) and a remarkable selectivity of 65–85% for methane in a wide temperature range (250–425 °C). In studying the mechanistic aspects of methanation, it has been shown that the hydrogenation of active carbon at the surface or below the surface is the key step for the production of methane. So far, this cobalt-catalyzed sub-step has been proposed in catalytic Fischer-Tropsch syntheses.},
	year = {2023},
	eissn = {2212-9839},
	orcid-numbers = {Varga, Gábor/0000-0002-7131-1629; Baán, Kornélia/0000-0001-7511-4422; Halasi, Gyula/0000-0003-0195-9400; Óvári, László/0000-0001-8991-2708; Fogarassy, Zsolt/0000-0003-4981-1237; Pécz, Béla/0000-0002-4651-6972; Olivi, Luca/0000-0002-8368-7105; Sápi, András/0000-0001-6557-0731; Kukovecz, Ákos/0000-0003-0716-9557; Kónya, Zoltán/0000-0002-9406-8596}
}

@article{MTMT:33733765,
	title = {In-situ formation of Ag nanoparticles in the MAO coating during the processing of cp-Ti},
	url = {https://m2.mtmt.hu/api/publication/33733765},
	author = {Maj, Ł. and Fogarassy, Zsolt and Wojtas, D. and Jarzębska, A. and Muhaffel, F. and Sulyok, Attila and Góral, A. and Kulczyk, M. and Çimenoğlu, H. and Bieda, M.},
	doi = {10.1038/s41598-023-29999-7},
	journal-iso = {SCI REP},
	journal = {SCIENTIFIC REPORTS},
	volume = {13},
	unique-id = {33733765},
	issn = {2045-2322},
	year = {2023},
	eissn = {2045-2322},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:33728503,
	title = {Irradiation-induced strain localization and strain burst suppression investigated by microcompression and concurrent acoustic emission experiments},
	url = {https://m2.mtmt.hu/api/publication/33728503},
	author = {Ugi, Dávid and Péterffy, Gábor and Lipcsei, S. and Fogarassy, Zsolt and Szilágyi, Edit and Groma, István and Ispánovity, Péter Dusán},
	doi = {10.1016/j.matchar.2023.112780},
	journal-iso = {MATER CHARACT},
	journal = {MATERIALS CHARACTERIZATION},
	volume = {199},
	unique-id = {33728503},
	issn = {1044-5803},
	year = {2023},
	eissn = {1873-4189},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Groma, István/0000-0002-6644-1365; Ispánovity, Péter Dusán/0000-0002-9956-0061}
}