@book{MTMT:34767558,
	title = {Thermal-electric logic integrated circuit and use of said integrated circuit},
	url = {https://m2.mtmt.hu/api/publication/34767558},
	author = {Mizsei, János and J., Lappalainen},
	unique-id = {34767558},
	abstract = {The invention is based on the integrated application of a thermal-electric active device (phonon transistor). Phonon transistors consist of resistors that respond to temperature changes with a metal-insulator phase transition, or possibly other resistors suitable for heat generation. These resistors are thermally and electrically coupled to each other as needed, and are thermally and electrically insulated from each other. The thermal-electric system built in this way is suitable for the implementation of high-integration logic networks.},
	year = {2023},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@{MTMT:33541580,
	title = {Thermal-electric logic integrated circuit and use of said integrated circuit},
	url = {https://m2.mtmt.hu/api/publication/33541580},
	author = {Mizsei, János and Jyrki, Lappalainen},
	unique-id = {33541580},
	year = {2022},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@article{MTMT:32812606,
	title = {Gas Sensors and Semiconductor Nanotechnology},
	url = {https://m2.mtmt.hu/api/publication/32812606},
	author = {Mizsei, János},
	doi = {10.3390/nano12081322},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {12},
	unique-id = {32812606},
	keywords = {Materials Science, Multidisciplinary; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology},
	year = {2022},
	eissn = {2079-4991},
	orcid-numbers = {Mizsei, János/0000-0003-3411-1502}
}

@inproceedings{MTMT:32236564,
	title = {Application of Vanadium Dioxide for Thermal Sensing},
	url = {https://m2.mtmt.hu/api/publication/32236564},
	author = {Darwish, Mahmoud Ibrahim Azmi and Al-abassi, Salam and Neumann, Péter Lajos and Mizsei, János and Pohl, László},
	booktitle = {Proceedings of the 27th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC'21 online)},
	doi = {10.1109/THERMINIC52472.2021.9626518},
	unique-id = {32236564},
	abstract = {Thermal sensors are widely used in different areas such as, automotive, defense, healthcare, and fire protection. Heat management is a hot topic nowadays, especially in electronics and power electronic packages, due to the miniaturization of semiconductor devices dimensions. New materials and concepts are studied to develop thermal sensors with more excellent reliability and sensitivity. Vanadium dioxide is a strongly correlated electron material with interesting thermal and optical properties due to its transition from a low-conducting phase to a high-conducting phase called metal-to-insulator transition. This study investigates two different models to use vanadium dioxide as a sensing element by presenting simulations performed on SUNRED simulator.},
	year = {2021},
	pages = {249-252},
	orcid-numbers = {Neumann, Péter Lajos/0000-0002-2881-5733; Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@inproceedings{MTMT:32236558,
	title = {Comparative multiphysics simulation of VO2 based lateral devices},
	url = {https://m2.mtmt.hu/api/publication/32236558},
	author = {Al-abassi, Salam and Darwish, Mahmoud Ibrahim Azmi and Pohl, László and Mizsei, János and Neumann, Péter Lajos},
	booktitle = {Proceedings of the 27th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC'21 online)},
	doi = {10.1109/THERMINIC52472.2021.9626517},
	unique-id = {32236558},
	abstract = {Due to reaching the end of Moore’s era and minimising CMOS technology becomes difficult. Finding different materials to keep electronic devices evolving is a matter of scientists. A thermal electronic logic circuit (TELC) is one of the most prominent alternatives that has been proposed recently. Vanadium dioxide (VO2) is an essential material that has been utilised in TELC due to its thermal and electrical properties. VO2 transits its electrical property from the semiconductor phase into the metal phase at around 67oC. In this paper, two numerical methods were used to determine the electrical and thermal characteristics of VO2, and measured data compared the results. The phase-change material behaviour was modelled by two different softwares using different simulation methods, finite volume method FVM and finite element method FEM. The sample preparation and the thermal and electrical measurements were carried out in our cleanroom.},
	year = {2021},
	pages = {178-181},
	orcid-numbers = {Pohl, László/0000-0003-2390-1381; Mizsei, János/0000-0003-3411-1502; Neumann, Péter Lajos/0000-0002-2881-5733}
}

@inproceedings{MTMT:31778148,
	title = {Study of Dynamic Simulation for Thermal-Electronic Logic Circuits},
	url = {https://m2.mtmt.hu/api/publication/31778148},
	author = {Darwish, Mahmoud Ibrahim Azmi and Neumann, Péter Lajos and Mizsei, János and Pohl, László},
	booktitle = {Proceedings of the 26th International Workshop on THERMal INvestigations of ICs and Systems (THERMINIC)},
	doi = {10.1109/THERMINIC49743.2020.9420495},
	unique-id = {31778148},
	abstract = {Emerging devices and materials in computing industry are recently of great interest because classical silicon-based circuit development is saturating due to scaling limits. Thermal-electronic logic circuit (TELC) concept is a promising approach to enhance conventional CMOS circuits or even replace them. Semiconductor-to-metal transition (SMT) of vanadium dioxide (VO2) is the main part of TELC as it allows transmission and control of information flow both electrically and thermally. The first TELC inverter is introduced in this article, dynamic simulations are performed to test its behavior and relation between propagation delay and input voltage is demonstrated. A new phase transition model is used to upgrade our SUNRED simulator. This new version is accurate and proved to be suitable for dynamic simulations. This article presents first dynamic simulation of SMT material.},
	year = {2020},
	pages = {97-102},
	orcid-numbers = {Neumann, Péter Lajos/0000-0002-2881-5733; Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@article{MTMT:31672178,
	title = {Magnetic Nanoparticles with Dual Surface Functions—Efficient Carriers for Metalloporphyrin-Catalyzed Drug Metabolite Synthesis in Batch and Continuous-Flow Reactors},
	url = {https://m2.mtmt.hu/api/publication/31672178},
	author = {Balogh Weiser, Diána and Decsi, Balázs and Réka, Krammer and Dargó, Gergő and Ender, Ferenc and Mizsei, János and Berkecz, Róbert and Gyarmati, Benjámin Sándor and Szilágyi, András Ferenc and Tötös, Róbert and Paizs, Csaba and Poppe, László and Balogh, György Tibor},
	doi = {10.3390/nano10122329},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {10},
	unique-id = {31672178},
	abstract = {The dual functionalization of magnetic nanoparticles with inert (methyl) and reactive (aminopropyl) groups enables efficient immobilization of synthetic metalloporphyrins (such as 5,10,15,20-tetrakis(2,3,4,5,6-pentafluorophenyl)iron(II) porphyrin and 5,10,15,20-tetrakis-(4-sulfonatophenyl)iron(II) porphyrin) via covalent or ionic interactions. The proportion of reactive function on the surface has significant effect on the biomimetic activity of metalloporphyrins. The
		optimized magnetic nanocatalyst containing porphyrin was successfully applied for biomimetic oxidation of antihypertensive drug Amlodipine in batch and continuous-flow reactors as well.},
	year = {2020},
	eissn = {2079-4991},
	orcid-numbers = {Balogh Weiser, Diána/0000-0002-9957-1203; Dargó, Gergő/0000-0002-1141-8379; Ender, Ferenc/0000-0003-3800-5707; Mizsei, János/0000-0003-3411-1502; Berkecz, Róbert/0000-0002-9076-2177; Szilágyi, András Ferenc/0000-0001-6898-1755; Paizs, Csaba/0000-0002-7403-7098; Poppe, László/0000-0002-8358-1378; Balogh, György Tibor/0000-0003-3347-1880}
}

@article{MTMT:31670744,
	title = {Electric and Photocatalytic Properties of Graphene Oxide Depending on the Degree of Its Reduction},
	url = {https://m2.mtmt.hu/api/publication/31670744},
	author = {Bakos, László Péter and Sárvári, Lőrinc and Nagyné László, Krisztina and Mizsei, János and Kónya, Zoltán and Halasi, Gyula and Hernádi, Klára and Szabó, Anna and Berkesi, Dániel Simon and Bakos, István and Szilágyi, Imre Miklós},
	doi = {10.3390/nano10112313},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {10},
	unique-id = {31670744},
	year = {2020},
	eissn = {2079-4991},
	orcid-numbers = {Nagyné László, Krisztina/0000-0003-4499-3983; Mizsei, János/0000-0003-3411-1502; Kónya, Zoltán/0000-0002-9406-8596; Halasi, Gyula/0000-0003-0195-9400; Hernádi, Klára/0000-0001-9419-689X}
}

@article{MTMT:31369246,
	title = {Electro-Thermal Simulation of Vertical VO2 Thermal-Electronic Circuit Elements},
	url = {https://m2.mtmt.hu/api/publication/31369246},
	author = {Darwish, Mahmoud Ibrahim Azmi and Neumann, Péter Lajos and Mizsei, János and Pohl, László},
	doi = {10.3390/en13133447},
	journal-iso = {ENERGIES},
	journal = {ENERGIES},
	volume = {13},
	unique-id = {31369246},
	issn = {1996-1073},
	abstract = {Advancement of classical silicon-based circuit technology is approaching maturity and saturation. The worldwide research is now focusing wide range of potential technologies for the “More than Moore” era. One of these technologies is thermal-electronic logic circuits based on the semiconductor-to-metal phase transition of vanadium dioxide, a possible future logic circuits to replace the conventional circuits. In thermal-electronic circuits, information flows in a combination of thermal and electronic signals. Design of these circuits will be possible once appropriate device models become available. Characteristics of vanadium dioxide are under research by preparing structures in laboratory and their validation by simulation models. Modeling and simulation of these devices is challenging due to several nonlinearities, discussed in this article. Introduction of custom finite volumes method simulator has however improved handling of special properties of vanadium dioxide. This paper presents modeling and electro-thermal simulation of vertically structured devices of different dimensions, 10 nm to 300 nm layer thicknesses and 200 nm to 30 um radii. Results of this research will facilitate determination of sample sizes in the next phase of device modeling.},
	year = {2020},
	eissn = {1996-1073},
	orcid-numbers = {Neumann, Péter Lajos/0000-0002-2881-5733; Mizsei, János/0000-0003-3411-1502; Pohl, László/0000-0003-2390-1381}
}

@inproceedings{MTMT:30842714,
	title = {Electro-Thermal Investigation of SMT Resistors for Thermal-Electrical Logic Circuits by Simulation},
	url = {https://m2.mtmt.hu/api/publication/30842714},
	author = {Pohl, László and Darwish, Mahmoud Ibrahim Azmi and Mizsei, János},
	booktitle = {2019 25TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC 2019)},
	doi = {10.1109/THERMINIC.2019.8923402},
	unique-id = {30842714},
	abstract = {Thermal-electrical logic circuits can be a possible alternative to CMOS technology. The basic element of these circuits is the vanadium dioxide resistor. Currently, only macroscopic models exist for the operation of VO2 resistors. The development of a submicron model requires the design, production and measurement of submicron-sized samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are performed using a macroscopic material model in the range of 200 µm to 50 nm resistor width and 20 µm to 50 nm length with 50 nm layer thickness. These results in the submicron range can only be considered as estimates, but they can be used to determine the size of the samples required for submicron modelling.},
	keywords = {THERMODYNAMICS},
	year = {2019},
	pages = {1-4},
	orcid-numbers = {Pohl, László/0000-0003-2390-1381; Mizsei, János/0000-0003-3411-1502}
}