TY  - JOUR
AU  - Passerini, Elias
AU  - Lewerenz, Mila
AU  - Csontos, Miklós
AU  - Jimenez Olalla, Nadia
AU  - Keller, Killian
AU  - Aeschlimann, Jan
AU  - Xie, Fangqing
AU  - Emboras, Alexandros
AU  - Zhang, Xinzhi
AU  - Fischer, Markus
AU  - Fedoryshyn, Yuriy
AU  - Luisier, Mathieu
AU  - Schimmel, Thomas
AU  - Koch, Ueli
AU  - Leuthold, Juerg
TI  - Controlling Volatility and Nonvolatility of Memristive Devices by Sn Alloying
JF  - ACS APPLIED ELECTRONIC MATERIALS
J2  - ACS APPL ELECTRON MA
VL  - 5
PY  - 2023
IS  - 12
SP  - 6842
EP  - 6849
PG  - 8
SN  - 2637-6113
DO  - 10.1021/acsaelm.3c01275
UR  - https://m2.mtmt.hu/api/publication/34500115
ID  - 34500115
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Török, Tímea Nóra
AU  - Makk, Péter
AU  - Balogh, Zoltán
AU  - Csontos, Miklós
AU  - Halbritter, András Ernő
TI  - Quantum Transport Properties of Nanosized Ta2O5 Resistive Switches: Variable Transmission Atomic Synapses for Neuromorphic Electronics
JF  - ACS APPLIED NANO MATERIALS
J2  - ACS APPL NANO MATER
VL  - 6
PY  - 2023
IS  - 22
SP  - 21340
EP  - 21349
PG  - 10
SN  - 2574-0970
DO  - 10.1021/acsanm.3c04769
UR  - https://m2.mtmt.hu/api/publication/34431981
ID  - 34431981
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Csontos, Miklós
AU  - Horst, Y.
AU  - Olalla, N.J.
AU  - Koch, U.
AU  - Shorubalko, I.
AU  - Halbritter, András Ernő
AU  - Leuthold, J.
TI  - Picosecond Time-Scale Resistive Switching Monitored in Real-Time
JF  - ADVANCED ELECTRONIC MATERIALS
J2  - ADV ELECTRON MATER
VL  - 9
PY  - 2023
IS  - 6
SN  - 2199-160X
DO  - 10.1002/aelm.202201104
UR  - https://m2.mtmt.hu/api/publication/33831558
ID  - 33831558
N1  - Funding Agency and Grant Number: Werner Siemens Stiftung; Swiss National Science Foundation under the Spark Project [196486]; NKFI [K128534]
            Funding text: This work was supported by the Werner Siemens Stiftung. M.C. acknowledges financial support from the Swiss National Science Foundation under the Spark Project Nr. 196486. A.H. acknowledges the NKFI K128534 grant.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Ducry, Fabian
AU  - Waldhoer, Dominic
AU  - Knobloch, Theresia
AU  - Csontos, Miklós
AU  - Jimenez, Olalla Nadia
AU  - Leuthold, Juerg
AU  - Grasser, Tibor
AU  - Luisier, Mathieu
TI  - An ab initio study on resistance switching in hexagonal boron nitride
JF  - NPJ 2D MATERIALS AND APPLICATIONS
J2  - NPJ 2D MATER APPL
VL  - 6
PY  - 2022
IS  - 1
SP  - 58
SN  - 2397-7132
DO  - 10.1038/s41699-022-00340-6
UR  - https://m2.mtmt.hu/api/publication/33079921
ID  - 33079921
AB  - Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching in hexagonal boron nitride (h-BN) has been demonstrated. This mechanism is most of the time attributed to the movement of metallic ions. It has however also been reported when h-BN is contacted with two inert electrodes such as graphene or Pt. We suggest here that the switching mechanism of the latter devices, which has not yet been clearly established, relies on locals change of the electronic structure of h-BN as caused by atomic defects, e.g., multi-vacancies. This class of intrinsic h-BN defects can create electrically controllable interlayer bridges. We use a combination of hybrid density functional theory and the Non-equilibrium Green’s function formalism to show that a single interlayer bridge resulting from the presence of a trivacancy in a graphene/h-BN/graphene stack leads to a switching voltage of ~5 V and a high-to-low resistance ratio >100. Both values lie within the reported experimental range and thus confirm the likelihood that intrinsic defects play a key role in the resistance switching of h-BN in contact with inert electrodes.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Pósa, László
AU  - Balogh, Zoltán
AU  - Krisztián, Dávid
AU  - Balázs, Péter
AU  - Sánta, Botond
AU  - Furrer, Roman
AU  - Csontos, Miklós
AU  - Halbritter, András Ernő
TI  - Noise diagnostics of graphene interconnects for atomic-scale electronics
JF  - NPJ 2D MATERIALS AND APPLICATIONS
J2  - NPJ 2D MATER APPL
VL  - 5
PY  - 2021
IS  - 1
PG  - 9
SN  - 2397-7132
DO  - 10.1038/s41699-021-00237-w
UR  - https://m2.mtmt.hu/api/publication/32040083
ID  - 32040083
AB  - Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale objects. Here we provide an insight into the microscopic processes taking place during the formation of graphene nanogaps through the detailed analysis of their low-frequency noise properties. Following the evolution of the noise level, we identify the fundamentally different regimes throughout the nanogap formation. By modeling the resistance and bias dependence of the noise, we resolve the major noise-generating processes: atomic-scale junction-width fluctuations in the nanojunction regime and sub-atomic gap-size fluctuations in the nanogap regime. As a milestone toward graphene-based atomic electronics, our results facilitate the automation of an optimized electrical breakdown protocol for high-yield graphene nanogap fabrication.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Sánta, Botond
AU  - Balogh, Zoltán
AU  - Pósa, László
AU  - Krisztián, Dávid
AU  - Török, Tímea Nóra
AU  - Molnár, Dániel
AU  - Sinkó, Csaba
AU  - Hauert, Roland
AU  - Csontos, Miklós
AU  - Halbritter, András Ernő
TI  - Noise Tailoring in Memristive Filaments
JF  - ACS APPLIED MATERIALS & INTERFACES
J2  - ACS APPL MATER INTER
VL  - 13
PY  - 2021
IS  - 6
SP  - 7453
EP  - 7460
PG  - 8
SN  - 1944-8244
DO  - 10.1021/acsami.0c21156
UR  - https://m2.mtmt.hu/api/publication/31867344
ID  - 31867344
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Nyáry, Anna
AU  - Gubicza, Ágnes
AU  - Overbeck, Jan
AU  - Pósa, László
AU  - Makk, Péter
AU  - Calame, Michel
AU  - Halbritter, András Ernő
AU  - Csontos, Miklós
TI  - A non-oxidizing fabrication method for lithographic break junctions of sensitive metals
JF  - NANOSCALE ADVANCES
J2  - NANOSCALE ADV
VL  - 2
PY  - 2020
IS  - 9
SP  - 3829
EP  - 3833
PG  - 5
SN  - 2516-0230
DO  - 10.1039/D0NA00498G
UR  - https://m2.mtmt.hu/api/publication/31592175
ID  - 31592175
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Török, Tímea Nóra
AU  - Csontos, Miklós
AU  - Makk, Péter
AU  - Halbritter, András Ernő
TI  - Breaking the Quantum PIN Code of Atomic Synapses
JF  - NANO LETTERS
J2  - NANO LETT
VL  - 20
PY  - 2020
IS  - 2
SP  - 1192
EP  - 1200
PG  - 9
SN  - 1530-6984
DO  - 10.1021/acs.nanolett.9b04617
UR  - https://m2.mtmt.hu/api/publication/31126336
ID  - 31126336
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Sánta, Botond
AU  - Molnár, Dániel
AU  - Haiber, P
AU  - Gubicza, A
AU  - Szilágyi, Edit
AU  - Zolnai, Zsolt
AU  - Halbritter, András Ernő
AU  - Csontos, Miklós
TI  - Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
JF  - BEILSTEIN JOURNAL OF NANOTECHNOLOGY
J2  - BEILSTEIN J NANOTECH
VL  - 11
PY  - 2020
SP  - 92
EP  - 100
PG  - 9
SN  - 2190-4286
DO  - 10.3762/bjnano.11.9
UR  - https://m2.mtmt.hu/api/publication/31043925
ID  - 31043925
AB  - Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Sánta, Botond
AU  - Balogh, Zoltán
AU  - Gubicza, Ágnes
AU  - Pósa, László
AU  - Krisztián, Dávid
AU  - Mihály, György
AU  - Csontos, Miklós
AU  - Halbritter, András Ernő
TI  - Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions
JF  - NANOSCALE
J2  - NANOSCALE
VL  - 11
PY  - 2019
IS  - 11
SP  - 4719
EP  - 4725
PG  - 7
SN  - 2040-3364
DO  - 10.1039/c8nr09985e
UR  - https://m2.mtmt.hu/api/publication/30538957
ID  - 30538957
LA  - English
DB  - MTMT
ER  -