@article{MTMT:34500115, title = {Controlling Volatility and Nonvolatility of Memristive Devices by Sn Alloying}, url = {https://m2.mtmt.hu/api/publication/34500115}, author = {Passerini, Elias and Lewerenz, Mila and Csontos, Miklós and Jimenez Olalla, Nadia and Keller, Killian and Aeschlimann, Jan and Xie, Fangqing and Emboras, Alexandros and Zhang, Xinzhi and Fischer, Markus and Fedoryshyn, Yuriy and Luisier, Mathieu and Schimmel, Thomas and Koch, Ueli and Leuthold, Juerg}, doi = {10.1021/acsaelm.3c01275}, journal-iso = {ACS APPL ELECTRON MA}, journal = {ACS APPLIED ELECTRONIC MATERIALS}, volume = {5}, unique-id = {34500115}, issn = {2637-6113}, year = {2023}, eissn = {2637-6113}, pages = {6842-6849}, orcid-numbers = {Passerini, Elias/0000-0002-5301-1892; Lewerenz, Mila/0000-0002-6715-4982; Csontos, Miklós/0000-0002-2766-6860; Keller, Killian/0000-0003-3180-8400; Aeschlimann, Jan/0000-0002-3592-1841; Xie, Fangqing/0000-0003-3399-1560; Luisier, Mathieu/0000-0002-2212-7972; Koch, Ueli/0000-0001-8796-2146; Leuthold, Juerg/0000-0003-0111-8169} } @article{MTMT:34431981, title = {Quantum Transport Properties of Nanosized Ta2O5 Resistive Switches: Variable Transmission Atomic Synapses for Neuromorphic Electronics}, url = {https://m2.mtmt.hu/api/publication/34431981}, author = {Török, Tímea Nóra and Makk, Péter and Balogh, Zoltán and Csontos, Miklós and Halbritter, András Ernő}, doi = {10.1021/acsanm.3c04769}, journal-iso = {ACS APPL NANO MATER}, journal = {ACS APPLIED NANO MATERIALS}, volume = {6}, unique-id = {34431981}, year = {2023}, eissn = {2574-0970}, pages = {21340-21349}, orcid-numbers = {Török, Tímea Nóra/0000-0001-5238-5895; Balogh, Zoltán/0000-0002-9580-361X; Csontos, Miklós/0000-0002-2766-6860; Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:33831558, title = {Picosecond Time-Scale Resistive Switching Monitored in Real-Time}, url = {https://m2.mtmt.hu/api/publication/33831558}, author = {Csontos, Miklós and Horst, Y. and Olalla, N.J. and Koch, U. and Shorubalko, I. and Halbritter, András Ernő and Leuthold, J.}, doi = {10.1002/aelm.202201104}, journal-iso = {ADV ELECTRON MATER}, journal = {ADVANCED ELECTRONIC MATERIALS}, volume = {9}, unique-id = {33831558}, issn = {2199-160X}, year = {2023}, eissn = {2199-160X}, orcid-numbers = {Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:33079921, title = {An ab initio study on resistance switching in hexagonal boron nitride}, url = {https://m2.mtmt.hu/api/publication/33079921}, author = {Ducry, Fabian and Waldhoer, Dominic and Knobloch, Theresia and Csontos, Miklós and Jimenez, Olalla Nadia and Leuthold, Juerg and Grasser, Tibor and Luisier, Mathieu}, doi = {10.1038/s41699-022-00340-6}, journal-iso = {NPJ 2D MATER APPL}, journal = {NPJ 2D MATERIALS AND APPLICATIONS}, volume = {6}, unique-id = {33079921}, abstract = {Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching in hexagonal boron nitride (h-BN) has been demonstrated. This mechanism is most of the time attributed to the movement of metallic ions. It has however also been reported when h-BN is contacted with two inert electrodes such as graphene or Pt. We suggest here that the switching mechanism of the latter devices, which has not yet been clearly established, relies on locals change of the electronic structure of h-BN as caused by atomic defects, e.g., multi-vacancies. This class of intrinsic h-BN defects can create electrically controllable interlayer bridges. We use a combination of hybrid density functional theory and the Non-equilibrium Green’s function formalism to show that a single interlayer bridge resulting from the presence of a trivacancy in a graphene/h-BN/graphene stack leads to a switching voltage of ~5 V and a high-to-low resistance ratio >100. Both values lie within the reported experimental range and thus confirm the likelihood that intrinsic defects play a key role in the resistance switching of h-BN in contact with inert electrodes.}, year = {2022}, eissn = {2397-7132}, pages = {58} } @article{MTMT:32040083, title = {Noise diagnostics of graphene interconnects for atomic-scale electronics}, url = {https://m2.mtmt.hu/api/publication/32040083}, author = {Pósa, László and Balogh, Zoltán and Krisztián, Dávid and Balázs, Péter and Sánta, Botond and Furrer, Roman and Csontos, Miklós and Halbritter, András Ernő}, doi = {10.1038/s41699-021-00237-w}, journal-iso = {NPJ 2D MATER APPL}, journal = {NPJ 2D MATERIALS AND APPLICATIONS}, volume = {5}, unique-id = {32040083}, abstract = {Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale objects. Here we provide an insight into the microscopic processes taking place during the formation of graphene nanogaps through the detailed analysis of their low-frequency noise properties. Following the evolution of the noise level, we identify the fundamentally different regimes throughout the nanogap formation. By modeling the resistance and bias dependence of the noise, we resolve the major noise-generating processes: atomic-scale junction-width fluctuations in the nanojunction regime and sub-atomic gap-size fluctuations in the nanogap regime. As a milestone toward graphene-based atomic electronics, our results facilitate the automation of an optimized electrical breakdown protocol for high-yield graphene nanogap fabrication.}, year = {2021}, eissn = {2397-7132}, orcid-numbers = {Furrer, Roman/0000-0002-3748-5027; Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:31867344, title = {Noise Tailoring in Memristive Filaments}, url = {https://m2.mtmt.hu/api/publication/31867344}, author = {Sánta, Botond and Balogh, Zoltán and Pósa, László and Krisztián, Dávid and Török, Tímea Nóra and Molnár, Dániel and Sinkó, Csaba and Hauert, Roland and Csontos, Miklós and Halbritter, András Ernő}, doi = {10.1021/acsami.0c21156}, journal-iso = {ACS APPL MATER INTER}, journal = {ACS APPLIED MATERIALS & INTERFACES}, volume = {13}, unique-id = {31867344}, issn = {1944-8244}, year = {2021}, eissn = {1944-8252}, pages = {7453-7460}, orcid-numbers = {Balogh, Zoltán/0000-0002-9580-361X; Pósa, László/0000-0001-7303-4031; Török, Tímea Nóra/0000-0001-5238-5895; Csontos, Miklós/0000-0002-2766-6860; Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:31592175, title = {A non-oxidizing fabrication method for lithographic break junctions of sensitive metals}, url = {https://m2.mtmt.hu/api/publication/31592175}, author = {Nyáry, Anna and Gubicza, Ágnes and Overbeck, Jan and Pósa, László and Makk, Péter and Calame, Michel and Halbritter, András Ernő and Csontos, Miklós}, doi = {10.1039/D0NA00498G}, journal-iso = {NANOSCALE ADV}, journal = {NANOSCALE ADVANCES}, volume = {2}, unique-id = {31592175}, issn = {2516-0230}, year = {2020}, eissn = {2516-0230}, pages = {3829-3833}, orcid-numbers = {Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:31126336, title = {Breaking the Quantum PIN Code of Atomic Synapses}, url = {https://m2.mtmt.hu/api/publication/31126336}, author = {Török, Tímea Nóra and Csontos, Miklós and Makk, Péter and Halbritter, András Ernő}, doi = {10.1021/acs.nanolett.9b04617}, journal-iso = {NANO LETT}, journal = {NANO LETTERS}, volume = {20}, unique-id = {31126336}, issn = {1530-6984}, year = {2020}, eissn = {1530-6992}, pages = {1192-1200}, orcid-numbers = {Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:31043925, title = {Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions}, url = {https://m2.mtmt.hu/api/publication/31043925}, author = {Sánta, Botond and Molnár, Dániel and Haiber, P and Gubicza, A and Szilágyi, Edit and Zolnai, Zsolt and Halbritter, András Ernő and Csontos, Miklós}, doi = {10.3762/bjnano.11.9}, journal-iso = {BEILSTEIN J NANOTECH}, journal = {BEILSTEIN JOURNAL OF NANOTECHNOLOGY}, volume = {11}, unique-id = {31043925}, issn = {2190-4286}, abstract = {Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.}, year = {2020}, eissn = {2190-4286}, pages = {92-100}, orcid-numbers = {Zolnai, Zsolt/0000-0003-3457-7679; Halbritter, András Ernő/0000-0003-4837-9745} } @article{MTMT:30538957, title = {Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions}, url = {https://m2.mtmt.hu/api/publication/30538957}, author = {Sánta, Botond and Balogh, Zoltán and Gubicza, Ágnes and Pósa, László and Krisztián, Dávid and Mihály, György and Csontos, Miklós and Halbritter, András Ernő}, doi = {10.1039/c8nr09985e}, journal-iso = {NANOSCALE}, journal = {NANOSCALE}, volume = {11}, unique-id = {30538957}, issn = {2040-3364}, year = {2019}, eissn = {2040-3372}, pages = {4719-4725}, orcid-numbers = {Mihály, György/0000-0001-8986-3299; Halbritter, András Ernő/0000-0003-4837-9745} }