TY - CHAP AU - Shimakawa, K. AU - Kugler, Sándor ED - Reimanis, Ivar E TI - Structure and defects T2 - World Scientific Reference Of Amorphous Materials : The Structure, Properties, Modeling And Main Applications PB - World Scientific Publishing CY - Singapore SN - 9789811215933 T3 - Materials and Energy, ISSN 2335-6596 ; 15. PY - 2020 SP - 51 EP - 77 PG - 27 DO - 10.1142/9789811215575_0002 UR - https://m2.mtmt.hu/api/publication/32674402 ID - 32674402 N1 - Export Date: 15 February 2022 LA - English DB - MTMT ER - TY - BOOK AU - Morigaki, K AU - Kugler, Sándor AU - Shimakawa, K TI - Amorphous Semiconductors: Structural, Optical and Electronic Properties ET - 0 PB - Wiley CY - Chichester PY - 2017 SP - 272 SN - 9781118758236 DO - 10.1002/9781118758236 UR - https://m2.mtmt.hu/api/publication/3327684 ID - 3327684 LA - English DB - MTMT ER - TY - JOUR AU - Hurtony, Tamás József AU - Szakál, Alex AU - Almásy, László AU - Len, Adél AU - Kugler, Sándor AU - Bonyár, Attila AU - Gordon, Péter TI - Characterization of the microstructure of tin-silver lead free solder JF - JOURNAL OF ALLOYS AND COMPOUNDS J2 - J ALLOY COMPD VL - 672 PY - 2016 SP - 13 EP - 19 PG - 7 SN - 0925-8388 DO - 10.1016/j.jallcom.2016.02.177 UR - https://m2.mtmt.hu/api/publication/3046261 ID - 3046261 LA - English DB - MTMT ER - TY - BOOK AU - Kugler, Sándor AU - Shimakawa, K TI - Amorphous Semiconductors ET - 0 PB - Cambridge University Press CY - Cambridge PY - 2015 SP - 147 SN - 9781139094337 DO - 10.1017/CBO9781139094337 UR - https://m2.mtmt.hu/api/publication/2854127 ID - 2854127 LA - English DB - MTMT ER - TY - JOUR AU - Freitas, Ruben Jeronimo AU - Shimakawa, K AU - Kugler, Sándor TI - Some remarks on the glass-transition temperature in chalcogenide glasses: a correlation with the microhardness JF - CHALCOGENIDE LETTERS J2 - CHALCOGEN LETT VL - 10 PY - 2013 IS - 1 SP - 39 EP - 43 PG - 5 SN - 1584-8663 UR - https://m2.mtmt.hu/api/publication/2694868 ID - 2694868 LA - English DB - MTMT ER - TY - JOUR AU - Kugler, Sándor TI - Advances in understanding the defects contributing to the tail states in pure amorphous silicon JF - JOURNAL OF NON-CRYSTALLINE SOLIDS J2 - J NON-CRYST SOLIDS VL - 358 PY - 2012 IS - 17 SP - 2060 EP - 2062 PG - 3 SN - 0022-3093 DO - 10.1016/j.jnoncrysol.2012.01.056 UR - https://m2.mtmt.hu/api/publication/2688024 ID - 2688024 LA - English DB - MTMT ER - TY - JOUR AU - Lukács, Rozália AU - Kugler, Sándor TI - Photoinduced Volume Changes of Obliquely and Flatly Deposited Amorphous AsSe Films Universal Description of the Kinetics JF - JAPANESE JOURNAL OF APPLIED PHYSICS (2008) J2 - JPN J APPL PHYS VL - 50 PY - 2011 IS - 9 PG - 4 SN - 0021-4922 DO - 10.1143/JJAP.50.091401 UR - https://m2.mtmt.hu/api/publication/2672016 ID - 2672016 AB - Recently, we have constructed structural models for flatly deposited amorphous Se (a-Se) and using these configurations we have developed atomic scale model of photoinduced volume changes in this type of films. In this paper the same work on obliquely deposited thin film is presented. Universal description for the kinetics of photoinduced volume change in chalcogenide glasses is proposed based on our results. Our model containing reversible (transient) and irreversible (metastable) parts for kinetics fits well the experimental results of both obliquely and flatly deposited a-AsSe thin films. Finally, we make a brief comment on stretched exponential function which could also provide a quite good fit to experimental data. (C) 2011 The Japan Society of Applied Physics LA - English DB - MTMT ER - TY - JOUR AU - Lukács, Rozália AU - Veres, Miklós AU - Shimakawa, K AU - Kugler, Sándor TI - Photoinduced bond breaking in a-Se: Raman spectroscopic study JF - PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS J2 - PHYS STATUS SOLIDI C CURR T SOLID STATE PHYS VL - 8 PY - 2011 IS - 9 SP - 2789 EP - 2791 PG - 3 SN - 1862-6351 DO - 10.1002/pssc.201084144 UR - https://m2.mtmt.hu/api/publication/1819094 ID - 1819094 LA - English DB - MTMT ER - TY - JOUR AU - Kugler, Sándor TI - What is the origin of tail states in amorphous semiconductors? JF - JOURNAL OF PHYSICS-CONFERENCE SERIES J2 - J PHYS CONF SER VL - 253 PY - 2010 IS - 1 PG - 5 SN - 1742-6588 DO - 10.1088/1742-6596/253/1/012013 UR - https://m2.mtmt.hu/api/publication/2661360 ID - 2661360 LA - English DB - MTMT ER - TY - JOUR AU - Lukács, Rozália AU - Kugler, Sándor TI - A simple model for the estimation of charge accumulation in amorphous selenium JF - CHEMICAL PHYSICS LETTERS J2 - CHEM PHYS LETT VL - 494 PY - 2010 IS - 4-6 SP - 287 EP - 288 PG - 2 SN - 0009-2614 DO - 10.1016/j.cplett.2010.06.037 UR - https://m2.mtmt.hu/api/publication/2654780 ID - 2654780 AB - Based on bond angle an elementary atomic triad model is proposed for the estimation of atomic charge accumulation inside distorted selenium chains. The calculated charges applying this model are in a good correlation with charge accumulations on selenium atoms derived by the Hartree–Fock ab initio method. Using this model the distribution of atomic charge accumulation is estimated in amorphous selenium. LA - English DB - MTMT ER -