TY - JOUR AU - Zámbó, Dániel AU - Kovács, Dávid AU - Radnóczi, György AU - Horváth, Zsolt Endre AU - Sulyok, Attila AU - Tolnai, István AU - Deák, András TI - Structural Control Enables Catalytic and Electrocatalytic Activity of Porous Tetrametallic Nanorods JF - SMALL J2 - SMALL VL - in press PY - 2024 PG - 12 SN - 1613-6810 DO - 10.1002/smll.202400421 UR - https://m2.mtmt.hu/api/publication/34822190 ID - 34822190 LA - English DB - MTMT ER - TY - JOUR AU - Horváth, Anita AU - Németh, Miklós László AU - Vargáné Beck, Andrea AU - Sáfrán, György AU - Horváth, Zsolt Endre AU - Rigó, István AU - May, Z AU - Korányi, Tamás TI - Methane pyrolysis on NiMo/MgO catalysts: The significance of equimolar NiMo alloy resisting nanosize segregation during the reaction JF - APPLIED CATALYSIS A-GENERAL J2 - APPL CATAL A-GEN VL - 676 PY - 2024 PG - 16 SN - 0926-860X DO - 10.1016/j.apcata.2024.119651 UR - https://m2.mtmt.hu/api/publication/34743262 ID - 34743262 LA - English DB - MTMT ER - TY - JOUR AU - Furko, Monika AU - Detsch, Rainer AU - Horváth, Zsolt Endre AU - Balázsi, Katalin AU - Boccaccini, Aldo R. AU - Balázsi, Csaba TI - Amorphous, Carbonated Calcium Phosphate and Biopolymer-Composite-Coated Si3N4/MWCNTs as Potential Novel Implant Materials JF - NANOMATERIALS J2 - NANOMATERIALS-BASEL VL - 14 PY - 2024 IS - 3 PG - 16 SN - 2079-4991 DO - 10.3390/nano14030279 UR - https://m2.mtmt.hu/api/publication/34672527 ID - 34672527 LA - English DB - MTMT ER - TY - JOUR AU - Nguyen Quoc, Khánh AU - Horváth, Zsolt Endre AU - Zolnai, Zsolt AU - Petrik, Péter AU - Pósa, László AU - Volk, János TI - Effect of process parameters on co-sputtered Al(1-x)ScxN layer's properties: Morphology, crystal structure, strain, band gap, and piezoelectricity JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING J2 - MAT SCI SEMICON PROC VL - 169 PY - 2024 PG - 9 SN - 1369-8001 DO - 10.1016/j.mssp.2023.107902 UR - https://m2.mtmt.hu/api/publication/34196964 ID - 34196964 AB - The effect of pulse direct current (DC) reactive ion co-sputtering parameters on the morphology, crystal structure, residual stress, band gap, and piezoelectric properties of the Al(1-x)ScxN thin film deposited in large target-to-substrate distance (TSD) system has been studied using Scanning Probe Microscopy, X ray Diffractometry, Spectroscopic Ellipsometry, and profilometer, among others. The process pressure was revealed to be the key factor which essentially determines the quality of the film for such system. As low as 0.2 Pa working pressure is needed to achieve smooth nitride layer with good piezoelectric properties. High N2/(Ar + N2) gas ratio also was shown to result in better film properties. Residual stress in nitride film, and thereby the optical band gap can be tuned by variation of process pressure, gas ratio, and Sc fraction in the studied x range (0–0.5). The Al(1-x)ScxN film deposited at low pressure, medium N2 gas ratio with x ∼ 0.41 shows high piezoelectric coefficient, relatively low residual stress, and smooth surface. Top electrode has been applied to eliminate the interfering effect of the restraining force induced by the unexcited matrix materials around tip/sample contact for Piezoresponse Force Microscopic (PFM) measurement of piezoelectric constant of thin nitride film. We have shown by comparing the corrected d33corr data determined with PFM to those obtained from direct piezoelectric method that PFM using proper measurement conditions and correction can be applied as a quantitative method for study of piezoelectric properties of thin film. LA - English DB - MTMT ER - TY - JOUR AU - Kertész, Krisztián Imre AU - Piszter, Gábor AU - Vargáné Beck, Andrea AU - Horváth, Anita AU - Nagy, G. AU - Molnár, György AU - Radnóczi, György Zoltán AU - Horváth, Zsolt Endre AU - Illés, Levente AU - Biró, László Péter TI - Hybrid Bio-Nanocomposites by Integrating Nanoscale Au in Butterfly Scales Colored by Photonic Nanoarchitectures JF - PHOTONICS J2 - PHOTONICS-BASEL VL - 10 PY - 2023 IS - 11 PG - 15 SN - 2304-6732 DO - 10.3390/photonics10111275 UR - https://m2.mtmt.hu/api/publication/34538415 ID - 34538415 LA - English DB - MTMT ER - TY - JOUR AU - Kovács, Dávid AU - Deák, András AU - Radnóczi, György Zoltán AU - Horváth, Zsolt Endre AU - Sulyok, Attila AU - Schiller, Róbert AU - Czömpöly, Ottó Sámuel AU - Zámbó, Dániel TI - Position of gold dictates the photophysical and photocatalytic properties of Cu2O in Cu2O/Au multicomponent nanoparticles JF - JOURNAL OF MATERIALS CHEMISTRY C J2 - J MATER CHEM C VL - 11 PY - 2023 IS - 26 SP - 8796 EP - 8807 PG - 12 SN - 2050-7526 DO - 10.1039/d3tc01213a UR - https://m2.mtmt.hu/api/publication/34538294 ID - 34538294 LA - English DB - MTMT ER - TY - JOUR AU - Merkel, Dániel AU - Sájerman, K. AU - Váczi, Tamás AU - Lenk, Sándor AU - Hegedűs, Gergő AU - Sajti, Szilárd Mihály AU - Németh, Attila AU - Gracheva, Maria AU - Petrik, Péter AU - Mukherjee, Deshabrato AU - Horváth, Zsolt Endre AU - Nagy, Dénes Lajos AU - Lengyel, Attila TI - Laser irradiation effects in FeRh thin film JF - MATERIALS RESEARCH EXPRESS J2 - MATER RES EXPRESS VL - 10 PY - 2023 IS - 7 PG - 7 SN - 2053-1591 DO - 10.1088/2053-1591/ace4a3 UR - https://m2.mtmt.hu/api/publication/34536298 ID - 34536298 LA - English DB - MTMT ER - TY - JOUR AU - Cretu, C. AU - Nicola, R. AU - Marinescu, S.-A. AU - Picioruș, E.-M. AU - Suba, M. AU - Duda-Seiman, C. AU - Len, Adél AU - Illés, Levente AU - Horváth, Zsolt Endre AU - Putz, A.-M. TI - Performance of Zr-Based Metal–Organic Framework Materials as In Vitro Systems for the Oral Delivery of Captopril and Ibuprofen JF - INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES J2 - INT J MOL SCI VL - 24 PY - 2023 IS - 18 PG - 24 SN - 1661-6596 DO - 10.3390/ijms241813887 UR - https://m2.mtmt.hu/api/publication/34189377 ID - 34189377 LA - English DB - MTMT ER - TY - JOUR AU - Merkel, Dániel AU - Sajti, Szilárd Mihály AU - Deák, László AU - Hegedűs, Gergő AU - Horváth, Zsolt Endre AU - Lengyel, Attila TI - Iron self-diffusion in B2-FeRh thin film JF - VACUUM J2 - VACUUM VL - 218 PY - 2023 PG - 5 SN - 0042-207X DO - 10.1016/j.vacuum.2023.112617 UR - https://m2.mtmt.hu/api/publication/34189371 ID - 34189371 LA - English DB - MTMT ER - TY - JOUR AU - Gajdics, Marcell AU - Serényi, Miklós AU - Kolonits, Tamás AU - Sulyok, Attila AU - Horváth, Zsolt Endre AU - Pécz, Béla TI - Reactive Sputter Deposition of Ga2O3 Thin Films Using Liquid Ga Target JF - COATINGS J2 - COATINGS VL - 13 PY - 2023 IS - 9 PG - 11 SN - 2079-6412 DO - 10.3390/coatings13091550 UR - https://m2.mtmt.hu/api/publication/34126054 ID - 34126054 AB - Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. It was found that, through the use of a lower DC target potential, a better film quality and higher oxygen content can be achieved. The reactive sputtering was modeled based on the Berg model, with the aim of determining the sputtering yields and the sticking coefficient. It was shown that an increase in DC target potential leads to the preferential sputtering of gallium. LA - English DB - MTMT ER -