@article{MTMT:34791151,
	title = {Dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film with monoclinic and orthorhombic symmetry},
	url = {https://m2.mtmt.hu/api/publication/34791151},
	author = {Anooz, Saud Bin and Petrik, Péter and Wang, Yankun and Mukherjee, Deshabrato and Schmidbauer, Martin and Schwarzkopf, Jutta},
	doi = {10.1364/OE.520426},
	journal-iso = {OPT EXPRESS},
	journal = {OPTICS EXPRESS},
	volume = {32},
	unique-id = {34791151},
	issn = {1094-4087},
	year = {2024},
	pages = {15597-15609},
	orcid-numbers = {Petrik, Péter/0000-0002-5374-6952}
}

@article{MTMT:34727540,
	title = {Optikai módszerek az MFA-ban},
	url = {https://m2.mtmt.hu/api/publication/34727540},
	author = {Petrik, Péter and Fried, Miklós and Lohner, Tivadar},
	journal-iso = {FIZIKAI SZEMLE},
	journal = {FIZIKAI SZEMLE},
	volume = {74},
	unique-id = {34727540},
	issn = {0015-3257},
	year = {2024},
	pages = {80-83},
	orcid-numbers = {Petrik, Péter/0000-0002-5374-6952; Fried, Miklós/0000-0002-9194-735X; Lohner, Tivadar/0000-0001-7459-9659}
}

@article{MTMT:34671579,
	title = {Compositional Optimization of Sputtered WO3/MoO3 Films for High Coloration Efficiency},
	url = {https://m2.mtmt.hu/api/publication/34671579},
	author = {Lábadi, Zoltán and Takács, Dániel and Zolnai, Zsolt and Petrik, Péter and Fried, Miklós},
	doi = {10.3390/ma17051000},
	journal-iso = {MATERIALS},
	journal = {MATERIALS},
	volume = {17},
	unique-id = {34671579},
	abstract = {Thin films of mixed MoO3 and WO3 were obtained using reactive magnetron sputtering onto ITO-covered glass, and the optimal composition was determined for the best electrochromic (EC) properties. A combinatorial material synthesis approach was applied throughout the deposition experiments, and the samples represented the full composition range of the binary MoO3/WO3 system. The electrochromic characteristics of the mixed oxide films were determined with simultaneous measurement of layer transmittance and applied electric current through the using organic propylene carbonate electrolyte cells in a conventional three-electrode configuration. Coloration efficiency data evaluated from the primary data plotted against the composition displayed a characteristic maximum at around 60% MoO3. Our combinatorial approach allows the localization of the maximum at 5% accuracy.},
	year = {2024},
	eissn = {1996-1944},
	orcid-numbers = {Takács, Dániel/0000-0002-3634-3887; Zolnai, Zsolt/0000-0003-3457-7679; Petrik, Péter/0000-0002-5374-6952; Fried, Miklós/0000-0002-9194-735X}
}

@article{MTMT:34555877,
	title = {Investigating the kinetics of layer development during the color etching of low-carbon steel with in-situ spectroscopic ellipsometry},
	url = {https://m2.mtmt.hu/api/publication/34555877},
	author = {Renkó, József Bálint and Romanenko, Alekszej and Bíró, Tamás and Szabó, Péter János and Petrik, Péter and Bonyár, Attila},
	doi = {10.1016/j.heliyon.2024.e25271},
	journal-iso = {HELIYON},
	journal = {HELIYON},
	volume = {10},
	unique-id = {34555877},
	keywords = {OPTICAL MICROSCOPY; spectroscopic ellipsometry; color etching; beraha-I; layer development kinetics},
	year = {2024},
	eissn = {2405-8440},
	orcid-numbers = {Szabó, Péter János/0000-0003-0892-6791; Petrik, Péter/0000-0002-5374-6952; Bonyár, Attila/0000-0002-6976-7846}
}

@article{MTMT:34503364,
	title = {In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process},
	url = {https://m2.mtmt.hu/api/publication/34503364},
	author = {Chou, Ta-Shun and Bin Anooz, Saud and Grüneberg, Raimund and Rehm, Jana and Akhtar, Arub and Mukherjee, Deshabrato and Petrik, Péter and Popp, Andreas},
	doi = {10.1016/j.apsusc.2024.159370},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {652},
	unique-id = {34503364},
	issn = {0169-4332},
	year = {2024},
	eissn = {1873-5584},
	orcid-numbers = {Chou, Ta-Shun/0000-0002-3897-6573; Grüneberg, Raimund/0000-0003-4700-2479; Rehm, Jana/0000-0003-4416-8449; Akhtar, Arub/0009-0008-3806-8920; Petrik, Péter/0000-0002-5374-6952; Popp, Andreas/0000-0001-6323-104X}
}

@article{MTMT:34196964,
	title = {Effect of process parameters on co-sputtered Al(1-x)ScxN layer's properties: Morphology, crystal structure, strain, band gap, and piezoelectricity},
	url = {https://m2.mtmt.hu/api/publication/34196964},
	author = {Nguyen Quoc, Khánh and Horváth, Zsolt Endre and Zolnai, Zsolt and Petrik, Péter and Pósa, László and Volk, János},
	doi = {10.1016/j.mssp.2023.107902},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {169},
	unique-id = {34196964},
	issn = {1369-8001},
	abstract = {The effect of pulse direct current (DC) reactive ion co-sputtering parameters on the morphology, crystal structure, residual stress, band gap, and piezoelectric properties of the Al(1-x)ScxN thin film deposited in large target-to-substrate distance (TSD) system has been studied using Scanning Probe Microscopy, X ray Diffractometry, Spectroscopic Ellipsometry, and profilometer, among others. The process pressure was revealed to be the key factor which essentially determines the quality of the film for such system. As low as 0.2 Pa working pressure is needed to achieve smooth nitride layer with good piezoelectric properties. High N2/(Ar + N2) gas ratio also was shown to result in better film properties. Residual stress in nitride film, and thereby the optical band gap can be tuned by variation of process pressure, gas ratio, and Sc fraction in the studied x range (0–0.5). The Al(1-x)ScxN film deposited at low pressure, medium N2 gas ratio with x ∼ 0.41 shows high piezoelectric coefficient, relatively low residual stress, and smooth surface. Top electrode has been applied to eliminate the interfering effect of the restraining force induced by the unexcited matrix materials around tip/sample contact for Piezoresponse Force Microscopic (PFM) measurement of piezoelectric constant of thin nitride film. We have shown by comparing the corrected d33corr data determined with PFM to those obtained from direct piezoelectric method that PFM using proper measurement conditions and correction can be applied as a quantitative method for study of piezoelectric properties of thin film.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Nguyen Quoc, Khánh/0000-0001-7032-2919; Horváth, Zsolt Endre/0000-0002-4632-0136; Zolnai, Zsolt/0000-0003-3457-7679; Petrik, Péter/0000-0002-5374-6952; Volk, János/0000-0003-3633-6190}
}

@misc{MTMT:34720280,
	title = {Investigation of Combinatorial TiO2-MoO3 Mixed Layers to Optimize the Electrochromic Properties},
	url = {https://m2.mtmt.hu/api/publication/34720280},
	author = {Ismaeel, N.T. and Lábadi, Zoltán and Petrik, Péter and Fried, Miklós},
	unique-id = {34720280},
	year = {2023},
	pages = {31-31},
	orcid-numbers = {Petrik, Péter/0000-0002-5374-6952; Fried, Miklós/0000-0002-9194-735X}
}

@article{MTMT:34536298,
	title = {Laser irradiation effects in FeRh thin film},
	url = {https://m2.mtmt.hu/api/publication/34536298},
	author = {Merkel, Dániel and Sájerman, K. and Váczi, Tamás and Lenk, Sándor and Hegedűs, Gergő and Sajti, Szilárd Mihály and Németh, Attila and Gracheva, Maria and Petrik, Péter and Mukherjee, Deshabrato and Horváth, Zsolt Endre and Nagy, Dénes Lajos and Lengyel, Attila},
	doi = {10.1088/2053-1591/ace4a3},
	journal-iso = {MATER RES EXPRESS},
	journal = {MATERIALS RESEARCH EXPRESS},
	volume = {10},
	unique-id = {34536298},
	year = {2023},
	eissn = {2053-1591},
	orcid-numbers = {Váczi, Tamás/0000-0003-0142-545X; Lenk, Sándor/0000-0002-7207-0329; Sajti, Szilárd Mihály/0000-0002-8748-8242; Gracheva, Maria/0000-0001-5245-8425; Petrik, Péter/0000-0002-5374-6952; Horváth, Zsolt Endre/0000-0002-4632-0136; Nagy, Dénes Lajos/0000-0002-6790-9505}
}

@{MTMT:34225793,
	title = {Ellipsometric probing of hot electrons in plasmonic media},
	url = {https://m2.mtmt.hu/api/publication/34225793},
	author = {Budai, J. and Pápa, Zsuzsanna and Petrik, Péter and Dombi, Péter},
	booktitle = {Proceedings of the 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2023},
	unique-id = {34225793},
	year = {2023},
	pages = {287-288},
	orcid-numbers = {Pápa, Zsuzsanna/0000-0003-3567-6468; Petrik, Péter/0000-0002-5374-6952; Dombi, Péter/0000-0002-0736-3512}
}

@article{MTMT:34053613,
	title = {Atomic structure and annealing-induced reordering of ε-Ga2O3: a Rutherford Backscattering/Channeling and Spectroscopic Ellipsometry study},
	url = {https://m2.mtmt.hu/api/publication/34053613},
	author = {Zolnai, Zsolt and Petrik, Péter and Németh, Attila and Volk, János and Bosi, M and Seravalli, L and Fornari, R},
	doi = {10.1016/j.apsusc.2023.157869},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {636},
	unique-id = {34053613},
	issn = {0169-4332},
	abstract = {The crystallographic structure of thin Ga2O3 layers grown by metal-organic vapour phase epitaxy on Al2O3 substrate was analyzed by Rutherford Backscattering Spectrometry/Channeling (RBS/C) angular yield scans performed around the c-axis of as-grown Ga2O3. The measured widths and minimum yields of the scan curves for the Ga and O component were compared to calculations based on the continuum steering potential model. The results obtained are consistent with a crystal structure containing oxygen atoms arranged in a 4H hexagonal closely packed lattice and Ga atoms preferentially occupying octahedral interstitial sites in the 4H cells - a structure closely related to the epsilon-Ga2O3 polymorph. After high-temperature annealing remarkable structural transformation is detected via significant changes in the RBS/C spectra. This effect is related to the hexagonal-monoclinic, i.e., epsilon-beta phase transformation of Ga2O3. Spectroscopic ellipsometry spectra of as-grown and annealed samples can be best fitted using a vertically graded single-layer B-spline model. Significant differences in the dielectric functions were found, showing bandgap reduction for long term annealing. These features are related to the epsilon-beta polymorphic transformation, variation of the preferred crystallographic orientation upon annealing, and differences in residual strain and defect structure determined by the annealing conditions.},
	year = {2023},
	eissn = {1873-5584},
	orcid-numbers = {Zolnai, Zsolt/0000-0003-3457-7679; Petrik, Péter/0000-0002-5374-6952; Volk, János/0000-0003-3633-6190}
}