TY  - JOUR
AU  - Pető, János
AU  - Dobrik, Gergely
AU  - Kukucska, Gergő
AU  - Vancsó, Péter
AU  - Koós, Antal Adolf
AU  - Koltai, János
AU  - Nemes Incze, Péter
AU  - Hwang, Chanyong
AU  - Tapasztó, Levente
TI  - Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers
JF  - NPJ 2D MATERIALS AND APPLICATIONS
J2  - NPJ 2D MATER APPL
VL  - 3
PY  - 2019
IS  - 1
SN  - 2397-7132
DO  - 10.1038/s41699-019-0123-5
UR  - https://m2.mtmt.hu/api/publication/30864570
ID  - 30864570
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Vancsó, Péter
AU  - Popov, Z.I.
AU  - Pető, János
AU  - Ollár, Tamás
AU  - Dobrik, Gergely
AU  - Pap, József Sándor
AU  - Hwang, C.
AU  - Sorokin, P.B.
AU  - Tapasztó, Levente
TI  - Transition metal chalcogenide single layers as an active platform for single-atom catalysis
JF  - ACS ENERGY LETTERS
J2  - ACS ENERGY LETT
VL  - 4
PY  - 2019
IS  - 8
SP  - 1947
EP  - 1953
PG  - 7
SN  - 2380-8195
DO  - 10.1021/acsenergylett.9b01097
UR  - https://m2.mtmt.hu/api/publication/30774658
ID  - 30774658
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Pető, János
AU  - Ollár, Tamás
AU  - Vancsó, Péter
AU  - Popov, Z.I.
AU  - Magda, Gábor Zsolt
AU  - Dobrik, Gergely
AU  - Hwang, C.
AU  - Sorokin, P.B.
AU  - Tapasztó, Levente
TI  - Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions
JF  - NATURE CHEMISTRY
J2  - NAT CHEM
VL  - 10
PY  - 2018
IS  - 12
SP  - 1246
EP  - 1251
PG  - 6
SN  - 1755-4330
DO  - 10.1038/s41557-018-0136-2
UR  - https://m2.mtmt.hu/api/publication/30331608
ID  - 30331608
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Fülöp, Bálint
AU  - Tajkov, Zoltán
AU  - Pető, János
AU  - Kun, Péter
AU  - Koltai, János
AU  - Oroszlány, László
AU  - Tóvári, Endre
AU  - Murakawa, H
AU  - Tokura, Y
AU  - Bordács, Sándor
AU  - Tapasztó, Levente
AU  - Csonka, Szabolcs
TI  - Exfoliation of single layer BiTeI flakes
JF  - 2D MATERIALS
J2  - 2D MATER
VL  - 5
ET  - 0
PY  - 2018
IS  - 3
PG  - 9
SN  - 2053-1583
DO  - 10.1088/2053-1583/aac652
UR  - https://m2.mtmt.hu/api/publication/3390771
ID  - 3390771
N1  - Department of Physics, Budapest University of Technology and Economics, Budafoki út 8, Budapest, 1111, Hungary            
            MTA-BME Condensed Matter Research Group, Budafoki út 8, Budapest, 1111, Hungary            
            Department of Biological Physics, Eötvös Loránd University, Budapest, Hungary            
            Centre for Energy Research, Institute of Technical Physics and Materials Science, 2D Nanoelectronics Lendület Research Group, Budapest, Hungary            
            Department of Physics of Complex Systems, Eötvös Loránd University, Budapest, Hungary            
            MTA-BME Lendület Nanoelectronics Research Group, Budafoki út 8, Budapest, 1111, Hungary            
            Department of Physics, Osaka University, Toyonaka, 560-0043, Japan            
            Department of Applied Physics, University of Tokyo, Tokyo, 113-8656, Japan            
            RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
AB  - Spin orbit interaction is strongly enhanced in structures where a heavy element is embedded in an inversion asymmetric crystal field. A simple way for realizing such a setup is to take a single atomic layer of a heavy element and encapsulate it between two atomic layers of different elemental composition. BiTeI is a promising candidate for such a 2D crystal. In its bulk form BiTeI consists of loosely coupled three atom thick layers where a layer of high atomic number Bi are sandwiched between Te and I sheets. Despite considerable recent attention to bulk BiTeI due to its giant Rashba spin splitting, the isolation of a single layer remained elusive. In this work we report the first successful isolation and characterization of a single layer of BiTeI using a novel exfoliation technique on stripped gold. Our scanning probe studies and first principles calculations show that the fabricated 100 mu m sized BiTeI flakes are stable at ambient conditions. Giant Rashba splitting and spin-momentum locking of this new 2D crystal opens the way towards novel spintronic applications and synthetic topological heterostructures.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Vancsó, Péter
AU  - Magda, Gábor Zsolt
AU  - Pető, János
AU  - Noh, JY
AU  - Kim, YS
AU  - Hwang, C
AU  - Biró, László Péter
AU  - Tapasztó, Levente
TI  - The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy
JF  - SCIENTIFIC REPORTS
J2  - SCI REP
VL  - 6
PY  - 2016
PG  - 7
SN  - 2045-2322
DO  - 10.1038/srep29726
UR  - https://m2.mtmt.hu/api/publication/3122457
ID  - 3122457
AB  - MoS2 single layers have recently emerged as strong competitors of graphene in electronic and optoelectronic device applications due to their intrinsic direct bandgap. However, transport measurements reveal the crucial role of defect-induced electronic states, pointing out the fundamental importance of characterizing their intrinsic defect structure. Transmission Electron Microscopy (TEM) is able to image atomic scale defects in MoS2 single layers, but the imaged defect structure is far from the one probed in the electronic devices, as the defect density and distribution are substantially altered during the TEM imaging. Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly resolve a high intrinsic concentration of individual sulfur atom vacancies, and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations. Experimental data on the intrinsic defect structure and the associated defect-bound electronic states that can be directly used for the interpretation of transport measurements are essential to fully understand the operation, reliability and performance limitations of realistic electronic devices based on MoS2 single layers.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Magda, Gábor Zsolt
AU  - Pető, János
AU  - Dobrik, Gergely
AU  - Hwang, C
AU  - Biró, László Péter
AU  - Tapasztó, Levente
TI  - Exfoliation of large-area transition metal chalcogenide single layers
JF  - SCIENTIFIC REPORTS
J2  - SCI REP
VL  - 5
PY  - 2015
PG  - 5
SN  - 2045-2322
DO  - 10.1038/srep14714
UR  - https://m2.mtmt.hu/api/publication/2984284
ID  - 2984284
AB  - Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically <10 um) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS<inf>2</inf>single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS<inf>2</inf> crystal. Moreover, we found that our exfoliation process is not specific to MoS<inf>2</inf>, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides.
LA  - English
DB  - MTMT
ER  -