@article{MTMT:33733401,
	title = {Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires},
	url = {https://m2.mtmt.hu/api/publication/33733401},
	author = {Elalaily, Tosson and Berke, Martin and Kedves, Máté and Fülöp, Gergő and Scherübl, Zoltán and Kanne, Thomas and Nygård, Jesper and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1021/acsnano.2c10877},
	journal-iso = {ACS NANO},
	journal = {ACS NANO},
	volume = {17},
	unique-id = {33733401},
	issn = {1936-0851},
	year = {2023},
	eissn = {1936-086X},
	pages = {5528-5535},
	orcid-numbers = {Kedves, Máté/0000-0002-2057-4891}
}

@article{MTMT:34207534,
	title = {Stabilizing the Inverted Phase of a WSe 2 /BLG/WSe 2 Heterostructure via Hydrostatic Pressure},
	url = {https://m2.mtmt.hu/api/publication/34207534},
	author = {Kedves, Máté and Szentpéteri, Bálint and Márffy, Albin Máté and Tóvári, Endre and Papadopoulos, Nikos and Rout, Prasanna K. and Watanabe, Kenji and Taniguchi, Takashi and Goswami, Srijit and Csonka, Szabolcs and Makk, Péter},
	doi = {10.1021/acs.nanolett.3c03029},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {23},
	unique-id = {34207534},
	issn = {1530-6984},
	year = {2023},
	eissn = {1530-6992},
	pages = {9508-9514},
	orcid-numbers = {Kedves, Máté/0000-0002-2057-4891; Tóvári, Endre/0000-0002-0000-3805; Papadopoulos, Nikos/0000-0002-9972-699X; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105}
}

@misc{MTMT:34719870,
	title = {Signature of pressure-induced topological phase transition in ZrTe5},
	url = {https://m2.mtmt.hu/api/publication/34719870},
	author = {Kovács-Krausz, Zoltán and Nagy, Dániel and Márffy, Albin Máté and Karpiak, Bogdan and Tajkov, Zoltán and Oroszlány, László and Koltai, János and Nemes Incze, Péter and Dash, Saroj P and Makk, Péter and Csonka, Szabolcs and Tóvári, Endre},
	unique-id = {34719870},
	abstract = {The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is in a weak TI phase in ambient conditions.},
	year = {2023},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Oroszlány, László/0000-0001-5682-6424; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Tóvári, Endre/0000-0002-0000-3805}
}

@article{MTMT:33673970,
	title = {Revealing the band structure of ZrTe5 using multicarrier transport},
	url = {https://m2.mtmt.hu/api/publication/33673970},
	author = {Kovács-Krausz, Zoltán and Tóvári, Endre and Nagy, Dániel and Márffy, Albin Máté and Karpiak, Bogdan and Tajkov, Zoltán and Oroszlány, László and Koltai, János and Nemes Incze, Péter and Dash, Saroj P. and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1103/PhysRevB.107.075152},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {107},
	unique-id = {33673970},
	issn = {2469-9950},
	year = {2023},
	eissn = {2469-9969},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Tóvári, Endre/0000-0002-0000-3805; Karpiak, Bogdan/0000-0001-7462-8405; Oroszlány, László/0000-0001-5682-6424; Koltai, János/0000-0003-2576-9740; Nemes Incze, Péter/0000-0002-1222-3020; Dash, Saroj P./0000-0001-7931-4843}
}

@article{MTMT:34192924,
	title = {Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage},
	url = {https://m2.mtmt.hu/api/publication/34192924},
	author = {Ruf, L. and Elalaily, Tosson and Puglia, C. and Ivanov, Yu.P. and Joint, F. and Berke, Martin and Iorio, A. and Makk, Péter and De, Simoni G. and Gasparinetti, S. and Divitini, G. and Csonka, Szabolcs and Giazotto, F. and Scheer, E. and Di Bernardo, A.},
	doi = {10.1063/5.0159750},
	journal-iso = {APL MATER},
	journal = {APL MATERIALS},
	volume = {11},
	unique-id = {34192924},
	issn = {2166-532X},
	year = {2023},
	eissn = {2166-532X}
}

@article{MTMT:32552315,
	title = {Double Nanowires for Hybrid Quantum Devices},
	url = {https://m2.mtmt.hu/api/publication/32552315},
	author = {Kanne, Thomas and Olsteins, Dags and Marnauza, Mikelis and Vekris, Alexandros and Estrada Saldaña, Juan Carlos and Loric̀, Sara and Schlosser, Rasmus D. and Ross, Daniel and Csonka, Szabolcs and Grove-Rasmussen, Kasper and Nygård, Jesper},
	doi = {10.1002/adfm.202107926},
	journal-iso = {ADV FUNCT MATER},
	journal = {ADVANCED FUNCTIONAL MATERIALS},
	volume = {32},
	unique-id = {32552315},
	issn = {1616-301X},
	abstract = {Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.},
	year = {2022},
	eissn = {1616-3028}
}

@article{MTMT:33096845,
	title = {Parallel InAs nanowires for Cooper pair splitters with Coulomb repulsion},
	url = {https://m2.mtmt.hu/api/publication/33096845},
	author = {Kürtössy, Olivér and Scherübl, Zoltán and Fülöp, Gergő and Lukács, István Endre and Kanne, Thomas and Nygard, Jesper and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1038/s41535-022-00497-9},
	journal-iso = {NPJ QUANTUM MATER},
	journal = {NPJ QUANTUM MATERIALS},
	volume = {7},
	unique-id = {33096845},
	abstract = {Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional channels being close by, these platforms can be utilized to spatially separate entangled pairs of electrons by using quantum dots (QD) in the so-called Cooper pair splitting (CPS) process. The minimized distance between the QDs overcomes the limitations of single-wire-based geometries and can boost the splitting efficiency. Here we investigate CPS in such a device where strong inter-dot Coulomb repulsion is also present and studied thoroughly. We analyze theoretically the slight reduction of the CPS efficiency imposed by the Coulomb interaction and compare it to the experiments. Despite the competition between crossed Andreev reflection (CAR) and inter-wire capacitance, a significant CPS signal is observed indicating the dominance of the superconducting coupling. Our results demonstrate that the application of parallel InAs nanowires with epitaxial SC is a promising route for the realization of parafermionic states relying on enhanced CAR between the wires.},
	keywords = {SUPERCONDUCTOR; Materials Science, Multidisciplinary; Physics, Applied; Quantum Science & Technology},
	year = {2022},
	eissn = {2397-4648},
	orcid-numbers = {Lukács, István Endre/0000-0002-4985-4475}
}

@article{MTMT:32916679,
	title = {From Cooper pair splitting to nonlocal spectroscopy of a Shiba state},
	url = {https://m2.mtmt.hu/api/publication/32916679},
	author = {Scherübl, Zoltán and Fülöp, Gergő and Gramich, Jörg and Pályi, András and Schönenberger, Christian and Nygard, Jesper and Csonka, Szabolcs},
	doi = {10.1103/PhysRevResearch.4.023143},
	journal-iso = {PRRESEARCH},
	journal = {PHYSICAL REVIEW RESEARCH},
	volume = {4},
	unique-id = {32916679},
	abstract = {Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization of those spatial current correlations, as the tunnel barrier strength between the quantum dot and the neighboring normal electrode is tuned. The correlation of the nonlocal signal and the barrier strength reveals a competition between CPS and the nonlocal probing of the Shiba state. We describe our experiment with a simple transport model and obtain the tunnel couplings of our device by fitting the model's prediction to the measured conductance correlation curve. Furthermore, we use our theory to extract the contribution of CPS to the nonlocal signal.},
	keywords = {GROWTH; TRANSPORT; ENTANGLEMENT; ANDREEV BOUND-STATES},
	year = {2022},
	eissn = {2643-1564},
	orcid-numbers = {Nygard, Jesper/0000-0002-4639-5314}
}

@article{MTMT:33293455,
	title = {Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect},
	url = {https://m2.mtmt.hu/api/publication/33293455},
	author = {Sütő, Máté and Prok, Tamás and Makk, Péter and Kirti, Magdhi and Biasiol, Giorgio and Csonka, Szabolcs and Tóvári, Endre},
	doi = {10.1103/PhysRevB.106.235404},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {106},
	unique-id = {33293455},
	issn = {2469-9950},
	year = {2022},
	eissn = {2469-9969},
	orcid-numbers = {Sütő, Máté/0000-0003-2983-4490; Kirti, Magdhi/0000-0001-9490-1405; Biasiol, Giorgio/0000-0001-7974-5459; Tóvári, Endre/0000-0002-0000-3805}
}

@article{MTMT:32541140,
	title = {Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires},
	url = {https://m2.mtmt.hu/api/publication/32541140},
	author = {Elalaily, Tosson and Kürtössy, Olivér and Scherübl, Zoltán and Berke, Martin and Fülöp, Gergő and Lukács, István Endre and Kanne, Thomas and Nygård, Jesper and Watanabe, Kenji and Taniguchi, Takashi and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1021/acs.nanolett.1c03493},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {21},
	unique-id = {32541140},
	issn = {1530-6984},
	year = {2021},
	eissn = {1530-6992},
	pages = {9684-9690},
	orcid-numbers = {Lukács, István Endre/0000-0002-4985-4475; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Makk, Péter/0000-0001-7637-4672}
}

@article{MTMT:32294722,
	title = {Boosting proximity spin–orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure},
	url = {https://m2.mtmt.hu/api/publication/32294722},
	author = {Fülöp, Bálint and Márffy, Albin Máté and Zihlmann, Simon and Gmitra, Martin and Tóvári, Endre and Szentpéteri, Bálint and Kedves, Máté and Watanabe, Kenji and Taniguchi, Takashi and Fabian, Jaroslav and Schönenberger, Christian and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1038/s41699-021-00262-9},
	journal-iso = {NPJ 2D MATER APPL},
	journal = {NPJ 2D MATERIALS AND APPLICATIONS},
	volume = {5},
	unique-id = {32294722},
	year = {2021},
	eissn = {2397-7132},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Zihlmann, Simon/0000-0001-5717-2063; Gmitra, Martin/0000-0003-1118-3028; Tóvári, Endre/0000-0002-0000-3805; Szentpéteri, Bálint/0000-0003-1587-1098; Kedves, Máté/0000-0002-2057-4891; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Schönenberger, Christian/0000-0002-5652-460X}
}

@article{MTMT:32130144,
	title = {New method of transport measurements on van der Waals heterostructures under pressure},
	url = {https://m2.mtmt.hu/api/publication/32130144},
	author = {Fülöp, Bálint and Márffy, Albin Máté and Tóvári, Endre and Kedves, Máté and Zihlmann, Simon and Indolese, David and Kovács-Krausz, Zoltán and Watanabe, Kenji and Taniguchi, Takashi and Schönenberger, Christian and Kézsmárki, István and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1063/5.0058583},
	journal-iso = {J APPL PHYS},
	journal = {JOURNAL OF APPLIED PHYSICS},
	volume = {130},
	unique-id = {32130144},
	issn = {0021-8979},
	year = {2021},
	eissn = {1089-7550},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Márffy, Albin Máté/0000-0002-5652-460X; Tóvári, Endre/0000-0002-0000-3805; Kedves, Máté/0000-0002-2057-4891; Zihlmann, Simon/0000-0001-5717-2063; Indolese, David/0000-0002-9436-8994; Kovács-Krausz, Zoltán/0000-0001-5821-6195; Watanabe, Kenji/0000-0003-3701-8119; Taniguchi, Takashi/0000-0002-1467-3105; Kézsmárki, István/0000-0003-4706-3247; Makk, Péter/0000-0001-7637-4672; Csonka, Szabolcs/0000-0003-0505-2806}
}

@article{MTMT:32210273,
	title = {In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr},
	url = {https://m2.mtmt.hu/api/publication/32210273},
	author = {Kocsis, Mátyás and Zheliuk, Oleksandr and Makk, Péter and Tóvári, Endre and Kun, Péter and Tereshchenko, Oleg Evgenevich and Kokh, Konstantin Aleksandrovich and Taniguchi, Takashi and Watanabe, Kenji and Ye, Jianting and Csonka, Szabolcs},
	doi = {10.1103/PhysRevResearch.3.033253},
	journal-iso = {PRRESEARCH},
	journal = {PHYSICAL REVIEW RESEARCH},
	volume = {3},
	unique-id = {32210273},
	year = {2021},
	eissn = {2643-1564},
	orcid-numbers = {Tóvári, Endre/0000-0002-0000-3805; Kun, Péter/0000-0002-9304-068X; Tereshchenko, Oleg Evgenevich/0000-0002-6157-5874; Watanabe, Kenji/0000-0003-3701-8119}
}

@article{MTMT:32242695,
	title = {Andreev Molecule in Parallel InAs Nanowires},
	url = {https://m2.mtmt.hu/api/publication/32242695},
	author = {Kürtössy, Olivér and Scherübl, Zoltán and Fülöp, Gergő and Lukács, István Endre and Kanne, Thomas and Nygård, Jesper and Makk, Péter and Csonka, Szabolcs},
	doi = {10.1021/acs.nanolett.1c01956},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {21},
	unique-id = {32242695},
	issn = {1530-6984},
	year = {2021},
	eissn = {1530-6992},
	pages = {7929-7937},
	orcid-numbers = {Lukács, István Endre/0000-0002-4985-4475; Makk, Péter/0000-0001-7637-4672}
}

@article{MTMT:32462636,
	title = {Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure.},
	url = {https://m2.mtmt.hu/api/publication/32462636},
	author = {Szentpéteri, Bálint and Rickhaus, Peter and de Vries, Folkert K and Márffy, Albin Máté and Fülöp, Bálint and Tóvári, Endre and Watanabe, Kenji and Taniguchi, Takashi and Kormányos, Andor and Csonka, Szabolcs and Makk, Péter},
	doi = {10.1021/acs.nanolett.1c03066},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {21},
	unique-id = {32462636},
	issn = {1530-6984},
	abstract = {Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.},
	keywords = {PRESSURE; Band structure; transport measurements; superlattice; continuum modeling; twisted double bilayer graphene},
	year = {2021},
	eissn = {1530-6992},
	pages = {8777-8784},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Tóvári, Endre/0000-0002-0000-3805; Kormányos, Andor/0000-0002-6837-6966}
}

@article{MTMT:32238958,
	title = {Large Voltage-Tunable Spin Valve Based on a Double Quantum Dot},
	url = {https://m2.mtmt.hu/api/publication/32238958},
	author = {Tulewicz, P. and Wrześniewski, K. and Csonka, Szabolcs and Weymann, I.},
	doi = {10.1103/PhysRevApplied.16.014029},
	journal-iso = {PHYS REV APPL},
	journal = {PHYSICAL REVIEW APPLIED},
	volume = {16},
	unique-id = {32238958},
	issn = {2331-7019},
	abstract = {We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within perturbation theory in the hopping between the dots, whereas the spectrum of a quantum-dot-ferromagnetic-lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double-dot levels. Such a field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of the external leads. We demonstrate that the considered double-quantum-dot spin-valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters. © 2021 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.},
	keywords = {Numerical methods; nanocrystals; Quantum chemistry; Semiconductor quantum dots; Perturbation techniques; Statistical mechanics; FERROMAGNETISM; Ferromagnetic materials; spin fluctuations; Magnetic devices; Magnetic configuration; Spin polarized currents; Ferromagnetic contacts; Tunnelling magnetoresistance; Numerical renormalization group methods; Ferromagnetic leads; Inverse tunnel magnetoresistance; Magnetoresistive property; Spin-dependent transport properties},
	year = {2021},
	eissn = {2331-7019}
}

@article{MTMT:31701894,
	title = {Probing Proximity-Induced Superconductivity in InAs Nanowires Using Built-In Barriers},
	url = {https://m2.mtmt.hu/api/publication/31701894},
	author = {Elalaily, Tosson and Kürtössy, Olivér and Zannier, Valentina and Scherübl, Zoltán and Lukács, István Endre and Srivastava, Pawan and Rossi, Francesca and Sorba, Lucia and Csonka, Szabolcs and Makk, Péter},
	doi = {10.1103/PhysRevApplied.14.044002},
	journal-iso = {PHYS REV APPL},
	journal = {PHYSICAL REVIEW APPLIED},
	volume = {14},
	unique-id = {31701894},
	issn = {2331-7019},
	abstract = {Bound states in superconductor-nanowire hybrid devices play a central role, carrying information on ground-state properties (Shiba or Andreev states) or on the topological properties of the system (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers. Here we used thin InP segments embedded into InAs nanowire during the growth process to form a sharp built-in tunnel barrier. Gate dependence and thermal-activation measurements are used to confirm the presence and estimate the height of this barrier. By coupling these wires to superconducting electrodes we investigate the gate voltage dependence of the induced gap in the nanowire segment, which we can understand using a simple model based on Andreev bound states. Our results show that these built-in barriers are promising as future spectroscopic tools.},
	year = {2020},
	eissn = {2331-7019},
	orcid-numbers = {Lukács, István Endre/0000-0002-4985-4475; Rossi, Francesca/0000-0003-1773-2542}
}

@article{MTMT:31385303,
	title = {Magnetic degeneracy points in interacting two-spin systems: Geometrical patterns, topological charge distributions, and their stability},
	url = {https://m2.mtmt.hu/api/publication/31385303},
	author = {Frank, György and Scherübl, Zoltán and Csonka, Szabolcs and Zaránd, Gergely Attila and Pályi, András},
	doi = {10.1103/PhysRevB.101.245409},
	journal-iso = {PHYS REV B},
	journal = {PHYSICAL REVIEW B},
	volume = {101},
	unique-id = {31385303},
	issn = {2469-9950},
	year = {2020},
	eissn = {2469-9969}
}

@article{MTMT:31357113,
	title = {Electrically Controlled Spin Injection from Giant Rashba Spin–Orbit Conductor BiTeBr},
	url = {https://m2.mtmt.hu/api/publication/31357113},
	author = {Kovács-Krausz, Zoltán and Hoque, Anamul Md and Makk, Péter and Szentpéteri, Bálint and Kocsis, Mátyás and Fülöp, Bálint and Yakushev, Michael Vasilievich and Kuznetsova, Tatyana Vladimirovna and Tereshchenko, Oleg Evgenevich and Kokh, Konstantin Aleksandrovich and Lukács, István Endre and Taniguchi, Takashi and Watanabe, Kenji and Dash, Saroj Prasad and Csonka, Szabolcs},
	doi = {10.1021/acs.nanolett.0c00458},
	journal-iso = {NANO LETT},
	journal = {NANO LETTERS},
	volume = {20},
	unique-id = {31357113},
	issn = {1530-6984},
	year = {2020},
	eissn = {1530-6992},
	pages = {4782-4791},
	orcid-numbers = {Kovács-Krausz, Zoltán/0000-0001-5821-6195; Fülöp, Bálint/0000-0001-6853-2642; Lukács, István Endre/0000-0002-4985-4475}
}

@article{MTMT:31779701,
	title = {Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography},
	url = {https://m2.mtmt.hu/api/publication/31779701},
	author = {Kun, Péter and Fülöp, Bálint and Dobrik, Gergely and Nemes Incze, Péter and Lukács, István Endre and Csonka, Szabolcs and Hwang, Chanyong and Tapasztó, Levente},
	doi = {10.1038/s41699-020-00177-x},
	journal-iso = {NPJ 2D MATER APPL},
	journal = {NPJ 2D MATERIALS AND APPLICATIONS},
	volume = {4},
	unique-id = {31779701},
	year = {2020},
	eissn = {2397-7132},
	orcid-numbers = {Fülöp, Bálint/0000-0001-6853-2642; Dobrik, Gergely/0000-0002-6690-274X; Nemes Incze, Péter/0000-0002-1222-3020; Lukács, István Endre/0000-0002-4985-4475; Tapasztó, Levente/0000-0002-9377-8465}
}