@article{MTMT:34714394,
	title = {Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature},
	url = {https://m2.mtmt.hu/api/publication/34714394},
	author = {Baji, Zsófia and Pécz, Béla and Fogarassy, Zsolt and Szabó, Zoltán and Cora, Ildikó},
	doi = {10.1016/j.tsf.2024.140267},
	journal-iso = {THIN SOLID FILMS},
	journal = {THIN SOLID FILMS},
	volume = {in press},
	unique-id = {34714394},
	issn = {0040-6090},
	abstract = {Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity.},
	keywords = {Atomic layer deposition; Thermal annealing; Pyrrhotite; Iron sulphide},
	year = {2024},
	eissn = {1879-2731},
	orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237; Szabó, Zoltán/0000-0002-2150-1459}
}

@article{MTMT:34714097,
	title = {Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack},
	url = {https://m2.mtmt.hu/api/publication/34714097},
	author = {Fogarassy, Zsolt and Wójcicka, Aleksandra and Cora, Ildikó and Rácz, Adél Sarolta and Grzanka, Szymon and Dodony, Erzsébet and Perlin, Piotr and Borysiewicz, Michał A.},
	doi = {10.1016/j.mssp.2024.108250},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {175},
	unique-id = {34714097},
	issn = {1369-8001},
	abstract = {In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:33213269,
	title = {Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga 2 O 3 Epitaxy and its Impact on the In‐Plane Electronic Conduction},
	url = {https://m2.mtmt.hu/api/publication/33213269},
	author = {Mazzolini, Piero and Fogarassy, Zsolt and Parisini, Antonella and Mezzadri, Francesco and Diercks, David and Bosi, Matteo and Seravalli, Luca and Sacchi, Anna and Spaggiari, Giulia and Bersani, Danilo and Bierwagen, Oliver and Janzen, Benjamin Moritz and Marggraf, Marcella Naomi and Wagner, Markus R. and Cora, Ildikó and Pécz, Béla and Tahraoui, Abbes and Bosio, Alessio and Borelli, Carmine and Leone, Stefano and Fornari, Roberto},
	doi = {10.1002/adfm.202207821},
	journal-iso = {ADV FUNCT MATER},
	journal = {ADVANCED FUNCTIONAL MATERIALS},
	volume = {33},
	unique-id = {33213269},
	issn = {1616-301X},
	year = {2023},
	eissn = {1616-3028},
	orcid-numbers = {Mazzolini, Piero/0000-0003-2092-5265; Fogarassy, Zsolt/0000-0003-4981-1237; Parisini, Antonella/0000-0003-4212-5074; Mezzadri, Francesco/0000-0001-9505-1457; Diercks, David/0000-0002-5138-0168; Bosi, Matteo/0000-0001-8992-0249; Seravalli, Luca/0000-0003-2784-1785; Sacchi, Anna/0000-0002-2824-7684; Spaggiari, Giulia/0000-0001-6072-8608; Bersani, Danilo/0000-0002-8026-983X; Bierwagen, Oliver/0000-0002-4746-5660; Janzen, Benjamin Moritz/0000-0002-6091-6761; Marggraf, Marcella Naomi/0000-0001-6803-3472; Wagner, Markus R./0000-0002-7367-5629; Pécz, Béla/0000-0002-4651-6972; Tahraoui, Abbes/0000-0002-8025-2050; Bosio, Alessio/0000-0001-8572-454X; Borelli, Carmine/0000-0002-2851-3508; Leone, Stefano/0000-0003-4579-3529; Fornari, Roberto/0000-0002-4499-8015}
}

@CONFERENCE{MTMT:34487511,
	title = {Y-TI-O VÉKONYRÉTEGRENDSZER ÖSSZETÉTELFÜGGŐ SZERKEZETE: A PIROKLÓR SZERKEZETŰ Y2TI2O7 HATÉKONY ELŐÁLLÍTÁSA. Composition dependent structure of the Y-Ti-O thin film system: efficient synthesis of Y2Ti2O7 with pyrochlore structure},
	url = {https://m2.mtmt.hu/api/publication/34487511},
	author = {Olasz, Dániel and Kovácsné Kis, Viktória and Cora, Ildikó and Sáfrán, György},
	booktitle = {A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023},
	unique-id = {34487511},
	year = {2023},
	pages = {68-70},
	orcid-numbers = {Olasz, Dániel/0000-0003-4136-4612; Sáfrán, György/0000-0003-3708-3551}
}

@article{MTMT:32909697,
	title = {High-temperature evolution of diamond-SiC composites},
	url = {https://m2.mtmt.hu/api/publication/32909697},
	author = {Bódis, Eszter and Cora, Ildikó and Fogarassy, Zsolt and Veres, Miklós and Németh, Péter},
	doi = {10.2298/PAC2201069B},
	journal-iso = {PROC APPL CERAMICS},
	journal = {PROCESSING AND APPLICATION OF CERAMICS},
	volume = {16},
	unique-id = {32909697},
	issn = {1820-6131},
	year = {2022},
	eissn = {2406-1034},
	pages = {69-77},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Németh, Péter/0000-0001-5592-5877}
}

@article{MTMT:32055088,
	title = {Atomic layer deposition and characterization of Zn-doped Ga2O3 films},
	url = {https://m2.mtmt.hu/api/publication/32055088},
	author = {Baji, Zsófia and Cora, Ildikó and Horváth, Zsolt Endre and Agócs, Emil and Szabó, Zoltán},
	doi = {10.1116/6.0000838},
	journal-iso = {J VAC SCI TECHNOL A},
	journal = {JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A-VACUUM SURFACES AND FILMS},
	volume = {39},
	unique-id = {32055088},
	issn = {0734-2101},
	abstract = {The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed.},
	year = {2021},
	eissn = {1520-8559},
	orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Horváth, Zsolt Endre/0000-0002-4632-0136; Agócs, Emil/0000-0002-5650-5599; Szabó, Zoltán/0000-0002-2150-1459}
}

@article{MTMT:31961887,
	title = {n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion},
	url = {https://m2.mtmt.hu/api/publication/31961887},
	author = {Bosio, A. and Parisini, A. and Lamperti, A. and Borelli, C. and Fornasini, L. and Bosi, M. and Cora, Ildikó and Fogarassy, Zsolt and Pécz, Béla and Zolnai, Zsolt and Németh, Attila and Vantaggio, S. and Fornari, R.},
	doi = {10.1016/j.actamat.2021.116848},
	journal-iso = {ACTA MATER},
	journal = {ACTA MATERIALIA},
	volume = {210},
	unique-id = {31961887},
	issn = {1359-6454},
	year = {2021},
	eissn = {1873-2453},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pécz, Béla/0000-0002-4651-6972; Zolnai, Zsolt/0000-0003-3457-7679}
}

@article{MTMT:31872395,
	title = {Material proposal for 2D indium oxide},
	url = {https://m2.mtmt.hu/api/publication/31872395},
	author = {Kakanakova-Georgieva, Anelia and Giannazzo, Filippo and Nicotra, Giuseppe and Cora, Ildikó and Gueorguiev, Gueorgui K. and Persson, Per O.Å. and Pécz, Béla},
	doi = {10.1016/j.apsusc.2021.149275},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {548},
	unique-id = {31872395},
	issn = {0169-4332},
	abstract = {Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in “atop” positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.},
	keywords = {Scanning Transmission Electron Microscopy; conductive atomic force microscopy; 2D oxides; Metal organic chemical vapor deposition},
	year = {2021},
	eissn = {1873-5584},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:31675223,
	title = {MOCVD of AlN on epitaxial graphene at extreme temperatures},
	url = {https://m2.mtmt.hu/api/publication/31675223},
	author = {Kakanakova-Georgieva, Anelia and Ivanov, Ivan G. and Suwannaharn, Nattamon and Hsu, Chih-Wei and Cora, Ildikó and Pécz, Béla and Giannazzo, Filippo and Sangiovanni, Davide G. and Gueorguiev, Gueorgui K.},
	doi = {10.1039/D0CE01426E},
	journal-iso = {CRYSTENGCOMM},
	journal = {CRYSTENGCOMM},
	volume = {23},
	unique-id = {31675223},
	issn = {1466-8033},
	abstract = {The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial graphene at temperatures in excess of 1200 °C have been rationalized. The use of epitaxial graphene, in conjunction with high deposition temperatures, can deliver on the realization of nanometer thin AlN whose material quality is characterized by the appearance of luminescent centers with narrow spectral emission at room temperature. It has been elaborated, based on our previous comprehensive ab initio molecular dynamics simulations, that the impact of graphene on AlN growth consists in the way it promotes dissociation of the trimethylaluminum, (CH3)3Al, precursor with subsequent formation of Al adatoms during the initial stages of the deposition process. The high deposition temperatures ensure adequate surface diffusion of the Al adatoms which is an essential factor in material quality enhancement. The role of graphene in intervening with the dissociation of another precursor, trimethylgallium, (CH3)3Ga, has accordingly been speculated by presenting a case of propagation of ultrathin GaN of semiconductor quality. A lower deposition temperature of 1100 °C in this case has better preserved the structural integrity of epitaxial graphene. Breakage and decomposition of the graphene layers has been deduced in the case of AlN deposition at temperatures in excess of 1200 °C.},
	year = {2021},
	eissn = {1466-8033},
	pages = {385-390},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:32526762,
	title = {Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition},
	url = {https://m2.mtmt.hu/api/publication/32526762},
	author = {Schilirò, Emanuela and Giannazzo, Filippo and Di Franco, Salvatore and Greco, Giuseppe and Fiorenza, Patrick and Roccaforte, Fabrizio and Prystawko, Paweł and Kruszewski, Piotr and Leszczynski, Mike and Cora, Ildikó and Pécz, Béla and Fogarassy, Zsolt and Lo Nigro, Raffaella},
	doi = {10.3390/nano11123316},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {11},
	unique-id = {32526762},
	year = {2021},
	eissn = {2079-4991},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}