@article{MTMT:34714394,
	title = {Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature},
	url = {https://m2.mtmt.hu/api/publication/34714394},
	author = {Baji, Zsófia and Pécz, Béla and Fogarassy, Zsolt and Szabó, Zoltán and Cora, Ildikó},
	doi = {10.1016/j.tsf.2024.140267},
	journal-iso = {THIN SOLID FILMS},
	journal = {THIN SOLID FILMS},
	volume = {794},
	unique-id = {34714394},
	issn = {0040-6090},
	abstract = {Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity.},
	keywords = {Atomic layer deposition; Thermal annealing; Pyrrhotite; Iron sulphide},
	year = {2024},
	eissn = {1879-2731},
	orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237; Szabó, Zoltán/0000-0002-2150-1459}
}

@article{MTMT:34714097,
	title = {Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack},
	url = {https://m2.mtmt.hu/api/publication/34714097},
	author = {Fogarassy, Zsolt and Wójcicka, Aleksandra and Cora, Ildikó and Rácz, Adél Sarolta and Grzanka, Szymon and Dodony, Erzsébet and Perlin, Piotr and Borysiewicz, Michał A.},
	doi = {10.1016/j.mssp.2024.108250},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {175},
	unique-id = {34714097},
	issn = {1369-8001},
	abstract = {In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34653875,
	title = {Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition},
	url = {https://m2.mtmt.hu/api/publication/34653875},
	author = {Galizia, Bruno and Fiorenza, Patrick and Schilirò, Emanuela and Pécz, Béla and Fogarassy, Zsolt and Greco, Giuseppe and Saggio, Mario and Cascino, Salvatore and Lo, Nigro Raffaella and Roccaforte, Fabrizio},
	doi = {10.1016/j.mssp.2024.108244},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {174},
	unique-id = {34653875},
	issn = {1369-8001},
	abstract = {Stacked aluminum oxide/aluminum nitride (Al2O3/AlN) layers were deposited on n-type (0001) 4H–SiC by atomic layer deposition (ALD) processes. The structural and chemical properties have been investigated and are consistent with the growth of ∼9 nm oriented (0001) AlN layer, and an upper 20 nm amorphous Al2O3 layer. The entire Al2O3/AlN stack was electrically characterized and compared with respect to a single Al2O3 layer having the same total thickness. The Al2O3/AlN bilayer exhibited a higher dielectric constant (κ = 8.7), a significant reduction of the oxide trapped charges (NOT) from 7.8 × 1012 to 1.8 × 1012 cm−2, as well as a decrease of a factor 2 of the interface traps density (Dit) compared with the Al2O3 single layer values. A large positive flat band voltage shift was observed in the C–V curves acquired on MIS capacitors. The comparison of the behaviour of MIS capacitors fabricated on both n-type and p-type 4H–SiC demonstrated that deep interface states (near the 4H–SiC mid gap) acting as acceptors or donors for the n-type and p-type MIS contribute to the observed behavior. This hypothesis has been also corroborated by TCAD simulations.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34193521,
	title = {Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)},
	url = {https://m2.mtmt.hu/api/publication/34193521},
	author = {Galizia, Bruno and Fiorenza, Patrick and Bongiorno, Corrado and Pécz, Béla and Fogarassy, Zsolt and Schilirò, Emanuela and Giannazzo, Filippo and Roccaforte, Fabrizio and Nigro, Raffaella Lo},
	doi = {10.1016/j.mee.2023.112103},
	journal-iso = {MICROELECTRON ENG},
	journal = {MICROELECTRONIC ENGINEERING},
	volume = {283},
	unique-id = {34193521},
	issn = {0167-9317},
	year = {2024},
	eissn = {1873-5568},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:33138741,
	title = {Encapsulation of the Graphene Nanoribbon Precursor 1, 2, 4‐trichlorobenzene in Boron Nitride Nanotubes at Room Temperature},
	url = {https://m2.mtmt.hu/api/publication/33138741},
	author = {Cadena Nogales, Ana Cristina and Pekker, Áron and Botka, Bea and Dodony, Erzsébet and Fogarassy, Zsolt and Pécz, Béla and Kamarás, Katalin},
	doi = {10.1002/pssr.202200284},
	journal-iso = {PHYS STATUS SOLIDI-R},
	journal = {PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS},
	volume = {17},
	unique-id = {33138741},
	issn = {1862-6254},
	year = {2023},
	eissn = {1862-6270},
	orcid-numbers = {Botka, Bea/0000-0003-3707-3097; Fogarassy, Zsolt/0000-0003-4981-1237; Pécz, Béla/0000-0002-4651-6972; Kamarás, Katalin/0000-0002-0390-3331}
}

@CONFERENCE{MTMT:34487420,
	title = {DIFFRAKCIÓS INTENZITÁS MÉRÉSEK TEM-BEN II.: AZ EWALD KORREKCIÓ KITERJESZTÉSE. Diffracted intensity measurements in TEM II.: Extension of the Ewald correction},
	url = {https://m2.mtmt.hu/api/publication/34487420},
	author = {Dodony, Erzsébet and Dódony, István and Fogarassy, Zsolt and Pekker, Péter and Sáfrán, György},
	booktitle = {A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023},
	unique-id = {34487420},
	year = {2023},
	pages = {28-31},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pekker, Péter/0000-0002-0463-0742; Sáfrán, György/0000-0003-3708-3551}
}

@CONFERENCE{MTMT:34487369,
	title = {A γ -NIKKEL-SZILICID SZERKEZETI VÁLTOZATOSSÁGA. Structural variability of the γ-nickel-silicide},
	url = {https://m2.mtmt.hu/api/publication/34487369},
	author = {Dodony, Erzsébet and Dódony, István and Fogarassy, Zsolt and Pekker, Péter and Sáfrán, György},
	booktitle = {A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023},
	unique-id = {34487369},
	year = {2023},
	pages = {26-28},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pekker, Péter/0000-0002-0463-0742; Sáfrán, György/0000-0003-3708-3551}
}

@article{MTMT:33686168,
	title = {Experimental and theoretical study on the production of carbide-rich composite nano-coatings},
	url = {https://m2.mtmt.hu/api/publication/33686168},
	author = {Fogarassy, Zsolt and Kentsch, U. and Panjan, P. and Rácz, Adél Sarolta},
	doi = {10.1016/j.surfin.2023.102773},
	journal-iso = {SURF INTERFACES},
	journal = {SURFACES AND INTERFACES},
	volume = {38},
	unique-id = {33686168},
	issn = {2468-0230},
	abstract = {Carbides are known for high hardness and corrosion resistance and therefore applicable as protective coatings. C/Si and C/W multilayers (the individual layer thicknesses were between 10 and 20 nm) have been irradiated at room temperature by argon and xenon ions. The energies varied between 40 and 120 keV while the fluences were in the range of 0.07 - 6 × 1016 ions/cm2. The SRIM simulation was applied to have the proper ion energy. The irradiation induced intermixing and carbide (SiC and WC) formation at the interfaces already for the lowest irradiation fluence. The component in-depth distribution has been determined by AES depth profiling which showed that it varied greatly as a function of the irradiation conditions and layer structure. In both material pair the thickness of the produced carbide increased with square root of fluence but the mixing mechanism were different: local spike for C/W and ballistic for C/Si. The mixing efficiency was lower for the C/Si than for the C/W.},
	keywords = {CARBIDE; IRRADIATION; MULTILAYER; SiC; Mixing; WC},
	year = {2023},
	eissn = {2468-0230},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:33535224,
	title = {Ca silicide films-promising materials for silicon optoelectronics},
	url = {https://m2.mtmt.hu/api/publication/33535224},
	author = {Galkin, Nikolay G. and Galkin, Konstantin N. and Goroshko, Dmitrii L. and Dotsenko, Sergei A. and Kropachev, Oleg V. and Chernev, Igor M. and Subbotin, Evgenii Yu and Alekseev, Aleksey Yu and Migas, Dmitry B. and Fogarassy, Zsolt and Pécz, Béla and Gutakovskii, Anton K.},
	doi = {10.35848/1347-4065/aca0fd},
	journal-iso = {JPN J APPL PHYS},
	journal = {JAPANESE JOURNAL OF APPLIED PHYSICS (2008)},
	volume = {62},
	unique-id = {33535224},
	issn = {0021-4922},
	abstract = {Single-phase films of semiconductor and semimetallic calcium silicides (Ca2Si, CaSi, and CaSi2), as well as films with a significant contribution of Ca5Si3 and Ca14Si19 silicides, were grown on single-crystal silicon and sapphire substrates. The analysis of the crystal structure of the grown films was carried out and the criterion of their matching with silicon and sapphire substrates was determined. Some lattice-matching models were proposed, and the subsequent deformations of the silicide lattices were estimated. Film's optical functions, including the optical transparency, were calculated from the optical spectroscopy data and an extended comparison was performed with the results of ab initio calculations. The real limits of the optical transparency for the films on sapphire substrates were established. The maximum transparency limit (3.9 eV) was observed for the CaSi film. Based on an analysis of the photoelectric properties of Ca2Si/Si diodes on n- and p-type silicon substrates, a perspective of their applications in silicon optoelectronics was discussed.},
	keywords = {PHASE; GROWTH; PERFORMANCE; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; SILICON; ELECTRICAL-PROPERTIES; crystal structure; ab initio calculations; TOTAL-ENERGY CALCULATIONS; Thermodynamic properties; TRANSPARENT; Optical functions; Ca silicides; epitaxial relations},
	year = {2023},
	eissn = {1347-4065},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:33733765,
	title = {In-situ formation of Ag nanoparticles in the MAO coating during the processing of cp-Ti},
	url = {https://m2.mtmt.hu/api/publication/33733765},
	author = {Maj, Ł. and Fogarassy, Zsolt and Wojtas, D. and Jarzębska, A. and Muhaffel, F. and Sulyok, Attila and Góral, A. and Kulczyk, M. and Çimenoğlu, H. and Bieda, M.},
	doi = {10.1038/s41598-023-29999-7},
	journal-iso = {SCI REP},
	journal = {SCIENTIFIC REPORTS},
	volume = {13},
	unique-id = {33733765},
	issn = {2045-2322},
	year = {2023},
	eissn = {2045-2322},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237}
}