TY - JOUR AU - Gurbán, Sándor AU - Sulyok, Attila AU - Menyhárd, Miklós AU - Baradács, Eszter AU - Parditka, Bence AU - Cserháti, Csaba AU - Langer, Gábor AU - Erdélyi, Zoltán TI - Interface induced diffusion JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 11 PY - 2021 PG - 10 SN - 2045-2322 DO - 10.1038/s41598-021-88808-1 UR - https://m2.mtmt.hu/api/publication/31993728 ID - 31993728 LA - English DB - MTMT ER - TY - JOUR AU - Gurbán, Sándor AU - Petrik, Péter AU - Serényi, Miklós AU - Sulyok, Attila AU - Menyhárd, Miklós AU - Baradács, Eszter AU - Parditka, Bence AU - Cserháti, Csaba AU - Langer, Gábor AU - Erdélyi, Zoltán TI - Electron irradiation induced amorphous SiO 2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 8 PY - 2018 IS - 1 PG - 7 SN - 2045-2322 DO - 10.1038/s41598-018-20537-4 UR - https://m2.mtmt.hu/api/publication/3331869 ID - 3331869 LA - English DB - MTMT ER - TY - JOUR AU - Battistig, Gábor AU - Gurbán, Sándor AU - Sáfrán, György AU - Sulyok, Attila AU - Németh, Attila AU - Panjan, P AU - Zolnai, Zsolt AU - Menyhárd, Miklós TI - Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing JF - SURFACE AND COATINGS TECHNOLOGY J2 - SURF COAT TECH VL - 302 PY - 2016 SP - 320 EP - 326 PG - 7 SN - 0257-8972 DO - 10.1016/j.surfcoat.2016.06.039 UR - https://m2.mtmt.hu/api/publication/3089477 ID - 3089477 LA - English DB - MTMT ER - TY - JOUR AU - Biró, Domokos AU - Jakab-Farkas, László AU - Kelemen, Andras AU - Papp, Sandor AU - Hasaneen, Mohamed Fathy AU - Menyhárd, Miklós AU - Gurbán, Sándor AU - Barna B., Péter TI - Effect of Oxygen Doping on the Structure of TiN Surface Coatings JF - Proceedings of the International Conference on Recent Achievements in Mechatronics, Automation, Computer Sciences and Robotics J2 - MACRO VL - 2015 PY - 2015 IS - 1 SP - 315 EP - 324 PG - 10 SN - 2247-0948 DO - 10.1515/macro-2015-0031 UR - https://m2.mtmt.hu/api/publication/30615421 ID - 30615421 AB - In the present work the influence of the level of oxygen doping on the structure of TiN films was investigated by dedicated experiments. The films were deposited at 400 degrees C in an all metal UHV device by unbalanced magnetron sputtering at the same Ar and nitrogen flow rates, but the oxygen flow rate was changed in the experiments, incorporating oxygen in the range of 4 and 20 at.%. The structure of the films was investigated by XRD, Auger electron (AES) and X-ray photon electron (XPS) spectroscopy and transmission electron microscopy (TEM). The results discovered the crystal face anisotropy in the incorporation-segregation of oxygen leading to the change of the < 111 > texture to < 002 >. The structure analysis revealed that the < 002 > texture is developing also by competitive growth of crystals, which is the result of the limitation of the growth of the < 111 > oriented crystals by the TiO2 layer developing on their growth surface by the segregated oxygen species. The oxygen incorporating in the crystal lattice on the 002 crystal faces of the < 002 > oriented crystals is segregated by surface spinodal decomposition, developing nm sized 3D TiO2 inclusion both in the bulk of the columns and the column boundaries. LA - English DB - MTMT ER - TY - CHAP AU - Ghegin, E. AU - Nemouchi, F. AU - Lábár, János AU - Favier, S. AU - Perrin, C. AU - Hoummada, K. AU - Gurbán, Sándor AU - Gergaud, P. TI - Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology T2 - IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway (NJ) SN - 9781467373562 PY - 2015 SP - 269 EP - 271 PG - 4 DO - 10.1109/IITC-MAM.2015.7325664 UR - https://m2.mtmt.hu/api/publication/30878698 ID - 30878698 LA - English DB - MTMT ER - TY - JOUR AU - Gurbán, Sándor AU - Kotysh, László AU - Pongrácz, Anita AU - Sulyok, Attila AU - Tóth, Attila Lajos AU - Vázsonyi, Éva AU - Menyhárd, Miklós TI - The chemical resistance of nano-sized SiC rich composite coating JF - SURFACE AND COATINGS TECHNOLOGY J2 - SURF COAT TECH VL - 261 PY - 2015 SP - 195 EP - 200 PG - 6 SN - 0257-8972 DO - 10.1016/j.surfcoat.2014.11.032 UR - https://m2.mtmt.hu/api/publication/2813781 ID - 2813781 LA - English DB - MTMT ER - TY - JOUR AU - Biró, Domokos AU - Hasaneen, MP AU - Székely, Lajos AU - Menyhárd, Miklós AU - Gurbán, Sándor AU - Pekker, Péter AU - Dódony, István AU - Barna B., Péter TI - Texture change of TiN films due to anisotropic incorporation of oxygen JF - VACUUM J2 - VACUUM VL - 103 PY - 2014 SP - 78 EP - 86 PG - 9 SN - 0042-207X DO - 10.1016/j.vacuum.2013.12.013 UR - https://m2.mtmt.hu/api/publication/2557236 ID - 2557236 AB - Results of comprehensive structural and microchemical analyses revealed the mechanisms responsible for changing the < 111 > to < 001 > competitive growth texture of TiN films when the level of oxygen doping was 20 at.%. It has been shown that the growth competition is related to the different way of segregation-incorporation of the oxygen species on the {001} and {111} crystal faces. Oxygen is preferentially segregated on the OM crystal face and is growing in the form of a 2D TiO2 surface layer on the growth surface, limiting the growth of < 111 > oriented crystals. On the {001} faces, however, the major part of condensing oxygen species is dissolved into the crystal lattice and only a part forms TiO2 aggregates. These aggregates have a 3D morphology which do not hinder the growth of < 001 > oriented crystals. Consequently, the < 001 > oriented crystals win the growth competition leading to a film structure constituted of V-shaped columns. (C) 2014 Elsevier Ltd. All rights reserved. LA - English DB - MTMT ER - TY - JOUR AU - Kotysh, László AU - Gurbán, Sándor AU - Pécz, Béla AU - Menyhárd, Miklós AU - Yakimova, R TI - Determination of the thickness distribution of a graphene layer grown on a 2" SiC wafer by means of Auger electron spectroscopy depth profiling JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 316 PY - 2014 IS - 1 SP - 301 EP - 307 PG - 7 SN - 0169-4332 DO - 10.1016/j.apsusc.2014.08.019 UR - https://m2.mtmt.hu/api/publication/2720997 ID - 2720997 LA - English DB - MTMT ER - TY - JOUR AU - Balázsi, Katalin AU - Lukács, István Endre AU - Gurbán, Sándor AU - Menyhárd, Miklós AU - Bacáková, L AU - Vandrovcová, M AU - Balázsi, Csaba TI - Structural, mechanical and biological comparison of TiC and TiCN nanocomposites films JF - JOURNAL OF THE EUROPEAN CERAMIC SOCIETY J2 - J EUR CERAM SOC VL - 33 PY - 2013 IS - 12 SP - 2217 EP - 2221 PG - 5 SN - 0955-2219 DO - 10.1016/j.jeurceramsoc.2012.12.010 UR - https://m2.mtmt.hu/api/publication/2326701 ID - 2326701 LA - English DB - MTMT ER - TY - JOUR AU - Barna, Árpád AU - Gurbán, Sándor AU - Kotysh, László AU - Lábár, János AU - Sulyok, Attila AU - Tóth, Attila Lajos AU - Menyhárd, Miklós AU - Kovac, J AU - Panjan, P TI - Growth of amorphous SiC film on Si by means of ion beam induced mixing JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 263 PY - 2012 SP - 367 EP - 372 PG - 6 SN - 0169-4332 DO - 10.1016/j.apsusc.2012.09.063 UR - https://m2.mtmt.hu/api/publication/2151857 ID - 2151857 AB - Focused ion beam (FIB)-induced ion mixing was studied in a C/Si/C/Si/C/Si substrate multilayer structure sample by means of Auger electron spectroscopy (AES) depth profiling, and transmission electron microscopy (TEM). The multilayer sample was irradiated with Ga+ ions using focused ion beam (FIB) at room temperature. The ion energy and fluence of the ion irradiation varied in the range of 10-30 keV and 10-120x 10(15) ions/cm(2), respectively. The ion irradiation induced a slightly asymmetric intermixing of the top C and Si layers, which could be modeled by the TRIDYN code. During ion mixing, part of the intermixed C and Si atoms reacted, forming amorphous SiC. The amount of SiC depends on the square root of the Ga+ fluence. Thus, amorphous SiC thin film (with Ga contamination) with thickness in the nanometer range can be produced by means of FIB. (C) 2012 Elsevier B. V. All rights reserved. LA - English DB - MTMT ER -