TY  - JOUR
AU  - Pécz, Béla
AU  - Tóth, Lajos
AU  - Barna, Árpád
AU  - Tsiakatouras, George
AU  - Ajagunna, Adebowale Olufunso
AU  - Kovács, András
AU  - Georgakilas, Alexandros
TI  - Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer
JF  - DIAMOND AND RELATED MATERIALS
J2  - DIAM RELAT MATER
VL  - 34
PY  - 2013
SP  - 9
EP  - 12
PG  - 4
SN  - 0925-9635
DO  - 10.1016/j.diamond.2013.01.005
UR  - https://m2.mtmt.hu/api/publication/2240087
ID  - 2240087
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Barna, Árpád
AU  - Gurbán, Sándor
AU  - Kotysh, László
AU  - Lábár, János
AU  - Sulyok, Attila
AU  - Tóth, Attila Lajos
AU  - Menyhárd, Miklós
AU  - Kovac, J
AU  - Panjan, P
TI  - Growth of amorphous SiC film on Si by means of ion beam induced mixing
JF  - APPLIED SURFACE SCIENCE
J2  - APPL SURF SCI
VL  - 263
PY  - 2012
SP  - 367
EP  - 372
PG  - 6
SN  - 0169-4332
DO  - 10.1016/j.apsusc.2012.09.063
UR  - https://m2.mtmt.hu/api/publication/2151857
ID  - 2151857
AB  - Focused ion beam (FIB)-induced ion mixing was studied in a C/Si/C/Si/C/Si substrate multilayer structure sample by means of Auger electron spectroscopy (AES) depth profiling, and transmission electron microscopy (TEM). The multilayer sample was irradiated with Ga+ ions using focused ion beam (FIB) at room temperature. The ion energy and fluence of the ion irradiation varied in the range of 10-30 keV and 10-120x 10(15) ions/cm(2), respectively. The ion irradiation induced a slightly asymmetric intermixing of the top C and Si layers, which could be modeled by the TRIDYN code. During ion mixing, part of the intermixed C and Si atoms reacted, forming amorphous SiC. The amount of SiC depends on the square root of the Ga+ fluence. Thus, amorphous SiC thin film (with Ga contamination) with thickness in the nanometer range can be produced by means of FIB. (C) 2012 Elsevier B. V. All rights reserved.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Barna, Árpád
AU  - Kotysh, László
AU  - Pécz, Béla
AU  - Sulyok, Attila
AU  - Sáfrán, György
AU  - Tóth, Attila Lajos
AU  - Menyhárd, Miklós
AU  - Kovacs, A
AU  - Savenko, A
TI  - Thin TaC layer produced by ion mixing
JF  - SURFACE AND COATINGS TECHNOLOGY
J2  - SURF COAT TECH
VL  - 206
PY  - 2012
IS  - 19-20
SP  - 3917
EP  - 3922
PG  - 6
SN  - 0257-8972
DO  - 10.1016/j.surfcoat.2012.03.052
UR  - https://m2.mtmt.hu/api/publication/2146693
ID  - 2146693
AB  - Ion-beam mixing in C/Ta layered systems was investigated. C 8 nm/Ta 12 nm and C 20 nm/Ta 19 nm/C 20 nm layer systems were irradiated by Ga+ ions of energy in the range of 2-30 keV. In case of the 8 nm and 20 nm thick C cover layers applying 5-8 key and 20-30 key Ga+ ion energy, respectively resulted in strongly asymmetric ion mixing; the carbon was readily transported to the Ta layer, while the reverse process was much weaker. Because of the asymmetrical transport the C/TaC interface remained sharp independently from the applied fluence. The carbon transported to the Ta layer formed TaCx. The stoichiometry of the carbide produced varied along the depth. The TaCx layer contained implanted Ga, the concentration of which decreased with increasing depth. The thickness of the TaCx layer could be tailored by the ion fluence and energy making possible to produce coating layer of desired thickness. (c) 2012 Elsevier ay. All rights reserved.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Barna, Árpád
AU  - Kotysh, László
AU  - Lábár, János
AU  - Sulyok, Attila
AU  - Tóth, Attila Lajos
AU  - Menyhárd, Miklós
AU  - Panjan, P
TI  - Growing imbedded Ni(3)C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers
JF  - JOURNAL OF PHYSICS D-APPLIED PHYSICS
J2  - J PHYS D APPL PHYS
VL  - 44
PY  - 2011
IS  - 12
PG  - 8
SN  - 0022-3727
DO  - 10.1088/0022-3727/44/12/125405
UR  - https://m2.mtmt.hu/api/publication/1707461
ID  - 1707461
AB  - C/Ni bilayers of various layer thicknesses (20-40 nm) were ion bombarded using Ga(+) and Ni(+) projectiles of energies 20 and 30 keV. Ion bombardment resulted in the growth of a Ni(3)C rich layer with the following features: (a) sharp carbon/Ni(3)C rich layer interface, (b) the amount of Ni(3)C produced by the irradiation proportional to the square root of the fluence and dependent on the type of projectile, (c) good correlation between the distribution of vacancies produced by the ion bombardment and the distribution of Ni(3)C. The formation of the metastable Ni(3)C compound was explained by a vacancy-assisted process. The sharp interface is the consequence of a relaxation process removing the intermixed Ni from the carbon layer. The square root of fluence dependence of the thickness of the Ni(3)C-rich layer can be explained by a usual diffusion equation considering moving boundaries.
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Pécz, Béla
AU  - Tóth, Lajos
AU  - Barna, Árpád
AU  - Tsiakatouras, G
AU  - Ajagunna, AO
AU  - Georgakilas, A
AU  - Kovács, A
TI  - Microscopy of nitride layers grown on diamond
JF  - JOURNAL OF PHYSICS-CONFERENCE SERIES
J2  - J PHYS CONF SER
VL  - 326
PY  - 2011
PG  - 4
SN  - 1742-6588
DO  - 10.1088/1742-6596/326/1/012010
UR  - https://m2.mtmt.hu/api/publication/1802765
ID  - 1802765
LA  - English
DB  - MTMT
ER  - 

TY  - CONF
AU  - Tóth, Lajos
AU  - Barna, Árpád
AU  - Pécz, Béla
AU  - Alomari, M
AU  - Rossi, S
AU  - Kohn, E
ED  - Falcieri, E
TI  - Electron microscopy of diamond layers grown over InAlN/GaN HEMT structures
T2  - Multinational Congress on Microscopy
PY  - 2011
SP  - 557
EP  - 558
PG  - 2
UR  - https://m2.mtmt.hu/api/publication/1802887
ID  - 1802887
LA  - English
DB  - MTMT
ER  - 

TY  - CONF
AU  - Pécz, Béla
AU  - Tóth, Lajos
AU  - Barna, Árpád
AU  - Tsiakatouras, G
AU  - Ajagunna, AO
AU  - Georgakilas, A
TI  - Microscopy of GaN grown on diamond
T2  - HETECH 2010
PY  - 2010
SP  - 19
EP  - 20
PG  - 2
UR  - https://m2.mtmt.hu/api/publication/1444420
ID  - 1444420
LA  - English
DB  - MTMT
ER  - 

TY  - CONF
AU  - Tóth, Lajos
AU  - Barna, Árpád
AU  - Pécz, Béla
AU  - Alomari, M
AU  - Dipalo, M
AU  - Rossi, S
AU  - Kohn, E
AU  - di, Forte-Poisson M-A
AU  - Delage, S
AU  - Carlin, J-F
AU  - Grandjean, N
TI  - Structure of diamond film grown over InAlN/GaN HEMT
T2  - HETECH 2010
PY  - 2010
SP  - 6
EP  - 7
PG  - 2
UR  - https://m2.mtmt.hu/api/publication/1444477
ID  - 1444477
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Barna, Árpád
AU  - Kotysh, László
AU  - Lábár, János
AU  - Osváth, Zoltán
AU  - Tóth, Attila Lajos
AU  - Menyhárd, Miklós
AU  - Zalar, A
AU  - Panjan, P
TI  - Producing metastable nanophase with sharp interface by means of focused ion beam irradiation
JF  - JOURNAL OF APPLIED PHYSICS
J2  - J APPL PHYS
VL  - 105
PY  - 2009
IS  - 4
PG  - 5
SN  - 0021-8979
DO  - 10.1063/1.3079508
UR  - https://m2.mtmt.hu/api/publication/141189
ID  - 141189
LA  - English
DB  - MTMT
ER  - 

TY  - JOUR
AU  - Simon, Alíz
AU  - Sulyok, Attila
AU  - Novák, Mihály
AU  - Juhász, György
AU  - Lohner, Tivadar
AU  - Fried, Miklós
AU  - Barna, Árpád
AU  - Huszánk, Róbert
AU  - Menyhárd, Miklós
TI  - Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques
JF  - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
J2  - NUCL INSTRUM METH B
VL  - 267
PY  - 2009
IS  - 12-13
SP  - 2212
EP  - 2215
PG  - 4
SN  - 0168-583X
DO  - 10.1016/j.nimb.2009.03.052
UR  - https://m2.mtmt.hu/api/publication/141076
ID  - 141076
LA  - English
DB  - MTMT
ER  -