@article{MTMT:2240087,
	title = {Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer},
	url = {https://m2.mtmt.hu/api/publication/2240087},
	author = {Pécz, Béla and Tóth, Lajos and Barna, Árpád and Tsiakatouras, George and Ajagunna, Adebowale Olufunso and Kovács, András and Georgakilas, Alexandros},
	doi = {10.1016/j.diamond.2013.01.005},
	journal-iso = {DIAM RELAT MATER},
	journal = {DIAMOND AND RELATED MATERIALS},
	volume = {34},
	unique-id = {2240087},
	issn = {0925-9635},
	year = {2013},
	eissn = {1879-0062},
	pages = {9-12},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Tóth, Lajos/0000-0003-0334-2869; Kovács, András/0000-0001-8485-991X}
}

@article{MTMT:2151857,
	title = {Growth of amorphous SiC film on Si by means of ion beam induced mixing},
	url = {https://m2.mtmt.hu/api/publication/2151857},
	author = {Barna, Árpád and Gurbán, Sándor and Kotysh, László and Lábár, János and Sulyok, Attila and Tóth, Attila Lajos and Menyhárd, Miklós and Kovac, J and Panjan, P},
	doi = {10.1016/j.apsusc.2012.09.063},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {263},
	unique-id = {2151857},
	issn = {0169-4332},
	abstract = {Focused ion beam (FIB)-induced ion mixing was studied in a C/Si/C/Si/C/Si substrate multilayer structure sample by means of Auger electron spectroscopy (AES) depth profiling, and transmission electron microscopy (TEM). The multilayer sample was irradiated with Ga+ ions using focused ion beam (FIB) at room temperature. The ion energy and fluence of the ion irradiation varied in the range of 10-30 keV and 10-120x 10(15) ions/cm(2), respectively. The ion irradiation induced a slightly asymmetric intermixing of the top C and Si layers, which could be modeled by the TRIDYN code. During ion mixing, part of the intermixed C and Si atoms reacted, forming amorphous SiC. The amount of SiC depends on the square root of the Ga+ fluence. Thus, amorphous SiC thin film (with Ga contamination) with thickness in the nanometer range can be produced by means of FIB. (C) 2012 Elsevier B. V. All rights reserved.},
	keywords = {SYSTEMS; SILICON-CARBIDE; ENERGY; DEVICES; Defect mediated compound formation; Ion mixing; Compound formation by FIB; Ion damage; SiC coating; Amorphous SiC},
	year = {2012},
	eissn = {1873-5584},
	pages = {367-372},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:2146693,
	title = {Thin TaC layer produced by ion mixing},
	url = {https://m2.mtmt.hu/api/publication/2146693},
	author = {Barna, Árpád and Kotysh, László and Pécz, Béla and Sulyok, Attila and Sáfrán, György and Tóth, Attila Lajos and Menyhárd, Miklós and Kovacs, A and Savenko, A},
	doi = {10.1016/j.surfcoat.2012.03.052},
	journal-iso = {SURF COAT TECH},
	journal = {SURFACE AND COATINGS TECHNOLOGY},
	volume = {206},
	unique-id = {2146693},
	issn = {0257-8972},
	abstract = {Ion-beam mixing in C/Ta layered systems was investigated. C 8 nm/Ta 12 nm and C 20 nm/Ta 19 nm/C 20 nm layer systems were irradiated by Ga+ ions of energy in the range of 2-30 keV. In case of the 8 nm and 20 nm thick C cover layers applying 5-8 key and 20-30 key Ga+ ion energy, respectively resulted in strongly asymmetric ion mixing; the carbon was readily transported to the Ta layer, while the reverse process was much weaker. Because of the asymmetrical transport the C/TaC interface remained sharp independently from the applied fluence. The carbon transported to the Ta layer formed TaCx. The stoichiometry of the carbide produced varied along the depth. The TaCx layer contained implanted Ga, the concentration of which decreased with increasing depth. The thickness of the TaCx layer could be tailored by the ion fluence and energy making possible to produce coating layer of desired thickness. (c) 2012 Elsevier ay. All rights reserved.},
	keywords = {SYSTEM; DIFFUSION; TAC; TANTALUM CARBIDES; Defect mediated compound formation; Ion mixing; TaC coating; Tantalum carbide},
	year = {2012},
	eissn = {1879-3347},
	pages = {3917-3922},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Sáfrán, György/0000-0003-3708-3551; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:1707461,
	title = {Growing imbedded Ni(3)C-rich layer with sharp interfaces by means of ion beam mixing of C/Ni layers},
	url = {https://m2.mtmt.hu/api/publication/1707461},
	author = {Barna, Árpád and Kotysh, László and Lábár, János and Sulyok, Attila and Tóth, Attila Lajos and Menyhárd, Miklós and Panjan, P},
	doi = {10.1088/0022-3727/44/12/125405},
	journal-iso = {J PHYS D APPL PHYS},
	journal = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
	volume = {44},
	unique-id = {1707461},
	issn = {0022-3727},
	abstract = {C/Ni bilayers of various layer thicknesses (20-40 nm) were ion bombarded using Ga(+) and Ni(+) projectiles of energies 20 and 30 keV. Ion bombardment resulted in the growth of a Ni(3)C rich layer with the following features: (a) sharp carbon/Ni(3)C rich layer interface, (b) the amount of Ni(3)C produced by the irradiation proportional to the square root of the fluence and dependent on the type of projectile, (c) good correlation between the distribution of vacancies produced by the ion bombardment and the distribution of Ni(3)C. The formation of the metastable Ni(3)C compound was explained by a vacancy-assisted process. The sharp interface is the consequence of a relaxation process removing the intermixed Ni from the carbon layer. The square root of fluence dependence of the thickness of the Ni(3)C-rich layer can be explained by a usual diffusion equation considering moving boundaries.},
	year = {2011},
	eissn = {1361-6463},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:1802765,
	title = {Microscopy of nitride layers grown on diamond},
	url = {https://m2.mtmt.hu/api/publication/1802765},
	author = {Pécz, Béla and Tóth, Lajos and Barna, Árpád and Tsiakatouras, G and Ajagunna, AO and Georgakilas, A and Kovács, A},
	doi = {10.1088/1742-6596/326/1/012010},
	journal-iso = {J PHYS CONF SER},
	journal = {JOURNAL OF PHYSICS-CONFERENCE SERIES},
	volume = {326},
	unique-id = {1802765},
	issn = {1742-6588},
	year = {2011},
	eissn = {1742-6596},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Tóth, Lajos/0000-0003-0334-2869}
}

@CONFERENCE{MTMT:1802887,
	title = {Electron microscopy of diamond layers grown over InAlN/GaN HEMT structures},
	url = {https://m2.mtmt.hu/api/publication/1802887},
	author = {Tóth, Lajos and Barna, Árpád and Pécz, Béla and Alomari, M and Rossi, S and Kohn, E},
	booktitle = {Multinational Congress on Microscopy},
	unique-id = {1802887},
	year = {2011},
	pages = {557-558},
	orcid-numbers = {Tóth, Lajos/0000-0003-0334-2869; Pécz, Béla/0000-0002-4651-6972}
}

@CONFERENCE{MTMT:1444420,
	title = {Microscopy of GaN grown on diamond},
	url = {https://m2.mtmt.hu/api/publication/1444420},
	author = {Pécz, Béla and Tóth, Lajos and Barna, Árpád and Tsiakatouras, G and Ajagunna, AO and Georgakilas, A},
	booktitle = {HETECH 2010},
	unique-id = {1444420},
	year = {2010},
	pages = {19-20},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Tóth, Lajos/0000-0003-0334-2869}
}

@CONFERENCE{MTMT:1444477,
	title = {Structure of diamond film grown over InAlN/GaN HEMT},
	url = {https://m2.mtmt.hu/api/publication/1444477},
	author = {Tóth, Lajos and Barna, Árpád and Pécz, Béla and Alomari, M and Dipalo, M and Rossi, S and Kohn, E and di, Forte-Poisson M-A and Delage, S and Carlin, J-F and Grandjean, N},
	booktitle = {HETECH 2010},
	unique-id = {1444477},
	year = {2010},
	pages = {6-7},
	orcid-numbers = {Tóth, Lajos/0000-0003-0334-2869; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:141189,
	title = {Producing metastable nanophase with sharp interface by means of focused ion beam irradiation},
	url = {https://m2.mtmt.hu/api/publication/141189},
	author = {Barna, Árpád and Kotysh, László and Lábár, János and Osváth, Zoltán and Tóth, Attila Lajos and Menyhárd, Miklós and Zalar, A and Panjan, P},
	doi = {10.1063/1.3079508},
	journal-iso = {J APPL PHYS},
	journal = {JOURNAL OF APPLIED PHYSICS},
	volume = {105},
	unique-id = {141189},
	issn = {0021-8979},
	year = {2009},
	eissn = {1089-7550},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Osváth, Zoltán/0000-0003-0440-5446; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:141076,
	title = {Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques},
	url = {https://m2.mtmt.hu/api/publication/141076},
	author = {Simon, Alíz and Sulyok, Attila and Novák, Mihály and Juhász, György and Lohner, Tivadar and Fried, Miklós and Barna, Árpád and Huszánk, Róbert and Menyhárd, Miklós},
	doi = {10.1016/j.nimb.2009.03.052},
	journal-iso = {NUCL INSTRUM METH B},
	journal = {NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
	volume = {267},
	unique-id = {141076},
	issn = {0168-583X},
	year = {2009},
	eissn = {1872-9584},
	pages = {2212-2215},
	orcid-numbers = {Lohner, Tivadar/0000-0001-7459-9659; Fried, Miklós/0000-0002-9194-735X; Huszánk, Róbert/0000-0001-9986-2388; Menyhárd, Miklós/0000-0003-4581-5337}
}