TY - JOUR AU - Roccaforte, F. AU - Vivona, M. AU - Panasci, S.E. AU - Greco, G. AU - Fiorenza, P. AU - Sulyok, Attila AU - Koós, Antal Adolf AU - Pécz, Béla AU - Giannazzo, F. TI - Schottky contacts on sulfurized silicon carbide (4H-SiC) surface JF - APPLIED PHYSICS LETTERS J2 - APPL PHYS LETT VL - 124 PY - 2024 IS - 10 PG - 5 SN - 0003-6951 DO - 10.1063/5.0192691 UR - https://m2.mtmt.hu/api/publication/34773813 ID - 34773813 LA - English DB - MTMT ER - TY - JOUR AU - Zámbó, Dániel AU - Kovács, Dávid AU - Radnóczi, György AU - Horváth, Zsolt Endre AU - Sulyok, Attila AU - Tolnai, István AU - Deák, András TI - Structural Control Enables Catalytic and Electrocatalytic Activity of Porous Tetrametallic Nanorods JF - SMALL J2 - SMALL VL - in press PY - 2024 PG - 12 SN - 1613-6810 DO - 10.1002/smll.202400421 UR - https://m2.mtmt.hu/api/publication/34822190 ID - 34822190 LA - English DB - MTMT ER - TY - JOUR AU - Gajdics, Marcell AU - Serényi, Miklós AU - Kolonits, Tamás AU - Sulyok, Attila AU - Horváth, Zsolt Endre AU - Pécz, Béla TI - Reactive Sputter Deposition of Ga2O3 Thin Films Using Liquid Ga Target JF - COATINGS J2 - COATINGS VL - 13 PY - 2023 IS - 9 PG - 11 SN - 2079-6412 DO - 10.3390/coatings13091550 UR - https://m2.mtmt.hu/api/publication/34126054 ID - 34126054 AB - Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. It was found that, through the use of a lower DC target potential, a better film quality and higher oxygen content can be achieved. The reactive sputtering was modeled based on the Berg model, with the aim of determining the sputtering yields and the sticking coefficient. It was shown that an increase in DC target potential leads to the preferential sputtering of gallium. LA - English DB - MTMT ER - TY - JOUR AU - Himics, László AU - Gál, Dávid AU - Csíkvári, Péter AU - Holomb, Roman AU - Koós, Margit AU - Sulyok, Attila AU - Pécz, Béla AU - Veres, Miklós TI - A modified plasma immersed solid-phase impurity assisted doping geometry for the creation of highly fluorescent CVD nanodiamond JF - VACUUM J2 - VACUUM VL - 216 PY - 2023 PG - 10 SN - 0042-207X DO - 10.1016/j.vacuum.2023.112493 UR - https://m2.mtmt.hu/api/publication/34094001 ID - 34094001 AB - In this work, we report on a simple and easy to realize doping geometry by which the color center formation efficiency can be improved significantly in nanocrystalline diamond structures during solid impurity source-assisted microwave plasma enhanced chemical vapor deposition (MWCVD). A vertically aligned solid impurity source immersed into the CVD plasma results in diamond thin film with significantly higher color center related fluorescence signal, than the horizontal and source-free arrangements. Based on the example of negatively charged silicon-vacancy (SiV−) center, we demonstrated that the emission peak intensity of fluorescent nanodiamond structures prepared in such a way can be 7–10 times enhanced without significant alteration of the crystal quality. The observed phenomenon is explained by the increased number of incorporated silicon impurities into the diamond nanocrystals, initiated by the beneficial conditions for the atomization of the vertically aligned impurity source, including the enlarged contact area and the elevated surface temperature. The efficiency of the method was demonstrated for thin films and individual nanocrystal structures as well. The proposed solid-phase doping source geometry can be adapted to other impurities to extend the type or improve the in-situ formation efficiency of impurity related color centers in CVD nanodiamond crystals. LA - English DB - MTMT ER - TY - JOUR AU - Horváth, Ákos AU - Sulyok, Attila AU - Dücső, Csaba AU - Schiller, Róbert TI - Work function of titanium thin layers JF - JOURNAL OF APPLIED PHYSICS J2 - J APPL PHYS VL - 134 PY - 2023 IS - 14 PG - 6 SN - 0021-8979 DO - 10.1063/5.0169329 UR - https://m2.mtmt.hu/api/publication/34538423 ID - 34538423 LA - English DB - MTMT ER - TY - JOUR AU - Kovács, Dávid AU - Deák, András AU - Radnóczi, György Zoltán AU - Horváth, Zsolt Endre AU - Sulyok, Attila AU - Schiller, Róbert AU - Czömpöly, Ottó Sámuel AU - Zámbó, Dániel TI - Position of gold dictates the photophysical and photocatalytic properties of Cu2O in Cu2O/Au multicomponent nanoparticles JF - JOURNAL OF MATERIALS CHEMISTRY C J2 - J MATER CHEM C VL - 11 PY - 2023 IS - 26 SP - 8796 EP - 8807 PG - 12 SN - 2050-7526 DO - 10.1039/d3tc01213a UR - https://m2.mtmt.hu/api/publication/34538294 ID - 34538294 LA - English DB - MTMT ER - TY - CONF AU - Lábár, János AU - Pécz, Béla AU - Sulyok, Attila AU - Chiod, F ED - Steinbach, Gábor TI - SZUPRAVEZETŐ SZILÍCIUM. Superconducting Silicon TS - Superconducting Silicon T2 - A Magyar Mikroszkópos Társaság éves konferenciájának kivonatkönyve 2023 : Book of the Abstracts of the Annual Conference of HSM 2023 PY - 2023 SP - 54 EP - 56 PG - 3 UR - https://m2.mtmt.hu/api/publication/34487551 ID - 34487551 N1 - Előadás LA - English DB - MTMT ER - TY - JOUR AU - Maj, Ł. AU - Fogarassy, Zsolt AU - Wojtas, D. AU - Jarzębska, A. AU - Muhaffel, F. AU - Sulyok, Attila AU - Góral, A. AU - Kulczyk, M. AU - Çimenoğlu, H. AU - Bieda, M. TI - In-situ formation of Ag nanoparticles in the MAO coating during the processing of cp-Ti JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 13 PY - 2023 IS - 1 PG - 7 SN - 2045-2322 DO - 10.1038/s41598-023-29999-7 UR - https://m2.mtmt.hu/api/publication/33733765 ID - 33733765 LA - English DB - MTMT ER - TY - GEN AU - Szomor, Zsombor AU - Bató, Lilia AU - Stagl, Silvia AU - Hakkel, Orsolya AU - Sulyok, Attila AU - Dücső, Csaba AU - Baji, Zsófia AU - Fürjes, Péter TI - Non-stoichiometric titanium-oxide gate electrodes for EGFET based pH sensors PY - 2023 UR - https://m2.mtmt.hu/api/publication/34484183 ID - 34484183 LA - English DB - MTMT ER - TY - JOUR AU - Tolnai, István AU - Osán, János AU - Czömpöly, Ottó Sámuel AU - Sulyok, Attila AU - Fábián, Margit TI - Glass/steel/clay interactions in a simulated radioactive waste geological disposal system JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 13 PY - 2023 IS - 1 PG - 13 SN - 2045-2322 DO - 10.1038/s41598-023-47578-8 UR - https://m2.mtmt.hu/api/publication/34395845 ID - 34395845 LA - English DB - MTMT ER -