TY - JOUR AU - Rácz, Adél Sarolta AU - Kun, Péter AU - Kerner, Zsolt Gábor AU - Fogarassy, Zsolt AU - Menyhárd, Miklós TI - Tungsten Carbide Nanolayer Formation by Ion Beam Mixing with Argon and Xenon Ions for Applications as Protective Coatings JF - ACS APPLIED NANO MATERIALS J2 - ACS APPL NANO MATER VL - 6 PY - 2023 IS - 5 SP - 3816 EP - 3824 PG - 9 SN - 2574-0970 DO - 10.1021/acsanm.2c05505 UR - https://m2.mtmt.hu/api/publication/34538351 ID - 34538351 LA - English DB - MTMT ER - TY - JOUR AU - Yang, T.F. AU - Zeng, R.G. AU - Yang, L.H. AU - Sulyok, Attila AU - Menyhárd, Miklós AU - Tőkési, Károly AU - Ding, Z.J. TI - Energy loss function of samarium JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 13 PY - 2023 IS - 1 PG - 8 SN - 2045-2322 DO - 10.1038/s41598-023-30770-1 UR - https://m2.mtmt.hu/api/publication/33706376 ID - 33706376 LA - English DB - MTMT ER - TY - JOUR AU - Dobrik, Gergely AU - Nemes Incze, Péter AU - Majerus, B AU - Süle, Péter AU - Vancsó, Péter AU - Piszter, Gábor AU - Menyhárd, Miklós AU - Kalas, Benjamin AU - Petrik, Péter AU - Henrard, L AU - Tapasztó, Levente TI - Large-area nanoengineering of graphene corrugations hosting visible-frequency graphene plasmons JF - NATURE NANOTECHNOLOGY J2 - NAT NANOTECHNOL VL - 17 PY - 2022 IS - 1 SP - 61 EP - 66 PG - 6 SN - 1748-3387 DO - 10.1038/s41565-021-01007-x UR - https://m2.mtmt.hu/api/publication/32100733 ID - 32100733 LA - English DB - MTMT ER - TY - GEN AU - Dobrik, Gergely AU - Nemes Incze, Péter AU - Majérus, Bruno AU - Süle, Péter AU - Vancsó, Péter AU - Piszter, Gábor AU - Menyhárd, Miklós AU - Kalas, Benjamin AU - Petrik, Péter AU - Henrard, Luc AU - Tapasztó, Levente TI - Visible-frequency graphene plasmons PY - 2022 PG - 1 UR - https://m2.mtmt.hu/api/publication/33111090 ID - 33111090 LA - English DB - MTMT ER - TY - JOUR AU - Rácz, Adél Sarolta AU - Fogarassy, Zsolt AU - Kentsch, U. AU - Panjan, P. AU - Menyhárd, Miklós TI - Design and production of tungsten-carbide rich coating layers JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 586 PY - 2022 PG - 8 SN - 0169-4332 DO - 10.1016/j.apsusc.2022.152818 UR - https://m2.mtmt.hu/api/publication/32680425 ID - 32680425 AB - Ion beam induced mixing (IBM) can be used for making protecting coating layers at room temperature. We have studied the production of tungsten-carbide, having high strength and low friction, by IBM since this material is also a candidate for protective coatings. WC rich layers have been produced by irradiating C/W multilayer of various structures (with individual layer thicknesses from 10 to 20 nm) by noble gases using medium energy projectiles. The resulting alterations of the samples have been measured by Auger electron spectroscopy (AES) depth-profiling. TRIDYN simulations, with some parametrization, were applied to determine the elemental in-depth distribution after IBM; the compound formation was calculated by a simple model. The calculated and measured depth profiles were compared and excellent agreement has been found for a rich dataset differing in layer structures, projectiles, ion fluences and energies. The good agreement in a wide parameter range validates our procedure and allows the design of the WC-rich layers and also enables the significant decrease of the experimental work. LA - English DB - MTMT ER - TY - JOUR AU - Rácz, Adél Sarolta AU - Fogarassy, Zsolt AU - Panjan, P. AU - Menyhárd, Miklós TI - Evaluation of AES depth profiles with serious artefacts in C/W multilayers JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 582 PY - 2022 PG - 8 SN - 0169-4332 DO - 10.1016/j.apsusc.2021.152385 UR - https://m2.mtmt.hu/api/publication/32594147 ID - 32594147 LA - English DB - MTMT ER - TY - JOUR AU - Rácz, Adél Sarolta AU - Kerner, Z AU - Menyhárd, Miklós TI - Corrosion resistance of tungsten-carbide-rich coating layers produced by noble gas ion mixing JF - APPLIED SURFACE SCIENCE J2 - APPL SURF SCI VL - 605 PY - 2022 PG - 9 SN - 0169-4332 DO - 10.1016/j.apsusc.2022.154662 UR - https://m2.mtmt.hu/api/publication/33079270 ID - 33079270 LA - English DB - MTMT ER - TY - JOUR AU - Gurbán, Sándor AU - Sulyok, Attila AU - Menyhárd, Miklós AU - Baradács, Eszter AU - Parditka, Bence AU - Cserháti, Csaba AU - Langer, Gábor AU - Erdélyi, Zoltán TI - Interface induced diffusion JF - SCIENTIFIC REPORTS J2 - SCI REP VL - 11 PY - 2021 PG - 10 SN - 2045-2322 DO - 10.1038/s41598-021-88808-1 UR - https://m2.mtmt.hu/api/publication/31993728 ID - 31993728 LA - English DB - MTMT ER - TY - JOUR AU - Yang, L.H. AU - Gong, J.M. AU - Sulyok, Attila AU - Menyhárd, Miklós AU - Sáfrán, György AU - Tőkési, Károly AU - Da, B. AU - Ding, Z.J. TI - Optical properties of amorphous carbon determined by reflection electron energy loss spectroscopy spectra JF - PHYSICAL CHEMISTRY CHEMICAL PHYSICS J2 - PHYS CHEM CHEM PHYS VL - 23 PY - 2021 IS - 44 SP - 25335 EP - 25346 PG - 12 SN - 1463-9076 DO - 10.1039/d1cp02447g UR - https://m2.mtmt.hu/api/publication/32525252 ID - 32525252 LA - English DB - MTMT ER - TY - JOUR AU - Bensalem, S. AU - Ghegin, E. AU - Boyer, F. AU - Lábár, János AU - Menyhárd, Miklós AU - Gergaud, P. AU - Nemouchi, F. AU - Rodriguez, Ph. TI - Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING J2 - MAT SCI SEMICON PROC VL - 113 PY - 2020 PG - 7 SN - 1369-8001 DO - 10.1016/j.mssp.2020.105038 UR - https://m2.mtmt.hu/api/publication/31207861 ID - 31207861 AB - The development of Complementary Metal Oxide Semiconductor (CMOS)-compatible contact technology on III–V materials based on Ti for electronics or photonics applications was studied. In this framework, solid-state reactions between Ti thin films (20 nm) and In0.53Ga0.47As layers grown on InP substrates were studied from the as-deposited state up to 550°C using a combination of advanced X-ray diffraction (in-plane reciprocal space mapping), Auger electron spectroscopy and transmission electron microscopy analyses. The phase formation sequence was solved. At low temperature, an amorphous Ti–Ga–As intermixing layer coexists with the Ti film. As of 250°C, the first crystalline phase to form is Ti2Ga3. At 300°C, a new crystalline phase appears, namely TiAs2. On the other hand, TiAs and metallic In form at 350°C and Ti is completely consumed between 450 and 500°C. The diffusion of the various species lead to the formation of a non-nominal Ga-rich InxGa1−xAs layer and at 550°C to the formation of polycrystalline GaAs. Ti was found to be the main diffusing species at low temperature whereas III and V elements are the dominant diffusing species at higher temperatures. The nature of the phases formed above and below the original Ti/InGaAs interface might explain the In accumulation at the interface, the TiAs phase acting as a diffusion barrier. LA - English DB - MTMT ER -