@article{MTMT:34538351,
	title = {Tungsten Carbide Nanolayer Formation by Ion Beam Mixing with Argon and Xenon Ions for Applications as Protective Coatings},
	url = {https://m2.mtmt.hu/api/publication/34538351},
	author = {Rácz, Adél Sarolta and Kun, Péter and Kerner, Zsolt Gábor and Fogarassy, Zsolt and Menyhárd, Miklós},
	doi = {10.1021/acsanm.2c05505},
	journal-iso = {ACS APPL NANO MATER},
	journal = {ACS APPLIED NANO MATERIALS},
	volume = {6},
	unique-id = {34538351},
	year = {2023},
	eissn = {2574-0970},
	pages = {3816-3824},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:33706376,
	title = {Energy loss function of samarium},
	url = {https://m2.mtmt.hu/api/publication/33706376},
	author = {Yang, T.F. and Zeng, R.G. and Yang, L.H. and Sulyok, Attila and Menyhárd, Miklós and Tőkési, Károly and Ding, Z.J.},
	doi = {10.1038/s41598-023-30770-1},
	journal-iso = {SCI REP},
	journal = {SCIENTIFIC REPORTS},
	volume = {13},
	unique-id = {33706376},
	issn = {2045-2322},
	year = {2023},
	eissn = {2045-2322},
	orcid-numbers = {Menyhárd, Miklós/0000-0003-4581-5337; Tőkési, Károly/0000-0001-8772-8472}
}

@article{MTMT:32100733,
	title = {Large-area nanoengineering of graphene corrugations hosting visible-frequency graphene plasmons},
	url = {https://m2.mtmt.hu/api/publication/32100733},
	author = {Dobrik, Gergely and Nemes Incze, Péter and Majerus, B and Süle, Péter and Vancsó, Péter and Piszter, Gábor and Menyhárd, Miklós and Kalas, Benjamin and Petrik, Péter and Henrard, L and Tapasztó, Levente},
	doi = {10.1038/s41565-021-01007-x},
	journal-iso = {NAT NANOTECHNOL},
	journal = {NATURE NANOTECHNOLOGY},
	volume = {17},
	unique-id = {32100733},
	issn = {1748-3387},
	year = {2022},
	eissn = {1748-3395},
	pages = {61-66},
	orcid-numbers = {Dobrik, Gergely/0000-0002-6690-274X; Nemes Incze, Péter/0000-0002-1222-3020; Vancsó, Péter/0000-0003-4333-9787; Piszter, Gábor/0000-0001-7155-4025; Menyhárd, Miklós/0000-0003-4581-5337; Petrik, Péter/0000-0002-5374-6952; Tapasztó, Levente/0000-0002-9377-8465}
}

@misc{MTMT:33111090,
	title = {Visible-frequency graphene plasmons},
	url = {https://m2.mtmt.hu/api/publication/33111090},
	author = {Dobrik, Gergely and Nemes Incze, Péter and Majérus, Bruno and Süle, Péter and Vancsó, Péter and Piszter, Gábor and Menyhárd, Miklós and Kalas, Benjamin and Petrik, Péter and Henrard, Luc and Tapasztó, Levente},
	unique-id = {33111090},
	year = {2022},
	orcid-numbers = {Dobrik, Gergely/0000-0002-6690-274X; Nemes Incze, Péter/0000-0002-1222-3020; Vancsó, Péter/0000-0003-4333-9787; Piszter, Gábor/0000-0001-7155-4025; Menyhárd, Miklós/0000-0003-4581-5337; Petrik, Péter/0000-0002-5374-6952; Tapasztó, Levente/0000-0002-9377-8465}
}

@article{MTMT:32680425,
	title = {Design and production of tungsten-carbide rich coating layers},
	url = {https://m2.mtmt.hu/api/publication/32680425},
	author = {Rácz, Adél Sarolta and Fogarassy, Zsolt and Kentsch, U. and Panjan, P. and Menyhárd, Miklós},
	doi = {10.1016/j.apsusc.2022.152818},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {586},
	unique-id = {32680425},
	issn = {0169-4332},
	abstract = {Ion beam induced mixing (IBM) can be used for making protecting coating layers at room temperature. We have studied the production of tungsten-carbide, having high strength and low friction, by IBM since this material is also a candidate for protective coatings. WC rich layers have been produced by irradiating C/W multilayer of various structures (with individual layer thicknesses from 10 to 20 nm) by noble gases using medium energy projectiles. The resulting alterations of the samples have been measured by Auger electron spectroscopy (AES) depth-profiling. TRIDYN simulations, with some parametrization, were applied to determine the elemental in-depth distribution after IBM; the compound formation was calculated by a simple model. The calculated and measured depth profiles were compared and excellent agreement has been found for a rich dataset differing in layer structures, projectiles, ion fluences and energies. The good agreement in a wide parameter range validates our procedure and allows the design of the WC-rich layers and also enables the significant decrease of the experimental work.},
	keywords = {simulation; COATING; Ion irradiation; WC; TRIDYN; Tungsten-carbide},
	year = {2022},
	eissn = {1873-5584},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:32594147,
	title = {Evaluation of AES depth profiles with serious artefacts in C/W multilayers},
	url = {https://m2.mtmt.hu/api/publication/32594147},
	author = {Rácz, Adél Sarolta and Fogarassy, Zsolt and Panjan, P. and Menyhárd, Miklós},
	doi = {10.1016/j.apsusc.2021.152385},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {582},
	unique-id = {32594147},
	issn = {0169-4332},
	year = {2022},
	eissn = {1873-5584},
	orcid-numbers = {Fogarassy, Zsolt/0000-0003-4981-1237; Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:33079270,
	title = {Corrosion resistance of tungsten-carbide-rich coating layers produced by noble gas ion mixing},
	url = {https://m2.mtmt.hu/api/publication/33079270},
	author = {Rácz, Adél Sarolta and Kerner, Z and Menyhárd, Miklós},
	doi = {10.1016/j.apsusc.2022.154662},
	journal-iso = {APPL SURF SCI},
	journal = {APPLIED SURFACE SCIENCE},
	volume = {605},
	unique-id = {33079270},
	issn = {0169-4332},
	year = {2022},
	eissn = {1873-5584},
	orcid-numbers = {Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:31993728,
	title = {Interface induced diffusion},
	url = {https://m2.mtmt.hu/api/publication/31993728},
	author = {Gurbán, Sándor and Sulyok, Attila and Menyhárd, Miklós and Baradács, Eszter and Parditka, Bence and Cserháti, Csaba and Langer, Gábor and Erdélyi, Zoltán},
	doi = {10.1038/s41598-021-88808-1},
	journal-iso = {SCI REP},
	journal = {SCIENTIFIC REPORTS},
	volume = {11},
	unique-id = {31993728},
	issn = {2045-2322},
	year = {2021},
	eissn = {2045-2322},
	orcid-numbers = {Menyhárd, Miklós/0000-0003-4581-5337}
}

@article{MTMT:32525252,
	title = {Optical properties of amorphous carbon determined by reflection electron energy loss spectroscopy spectra},
	url = {https://m2.mtmt.hu/api/publication/32525252},
	author = {Yang, L.H. and Gong, J.M. and Sulyok, Attila and Menyhárd, Miklós and Sáfrán, György and Tőkési, Károly and Da, B. and Ding, Z.J.},
	doi = {10.1039/d1cp02447g},
	journal-iso = {PHYS CHEM CHEM PHYS},
	journal = {PHYSICAL CHEMISTRY CHEMICAL PHYSICS},
	volume = {23},
	unique-id = {32525252},
	issn = {1463-9076},
	year = {2021},
	eissn = {1463-9084},
	pages = {25335-25346},
	orcid-numbers = {Menyhárd, Miklós/0000-0003-4581-5337; Sáfrán, György/0000-0003-3708-3551; Tőkési, Károly/0000-0001-8772-8472}
}

@article{MTMT:31207861,
	title = {Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes},
	url = {https://m2.mtmt.hu/api/publication/31207861},
	author = {Bensalem, S. and Ghegin, E. and Boyer, F. and Lábár, János and Menyhárd, Miklós and Gergaud, P. and Nemouchi, F. and Rodriguez, Ph.},
	doi = {10.1016/j.mssp.2020.105038},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {113},
	unique-id = {31207861},
	issn = {1369-8001},
	abstract = {The development of Complementary Metal Oxide Semiconductor (CMOS)-compatible contact technology on III–V materials based on Ti for electronics or photonics applications was studied. In this framework, solid-state reactions between Ti thin films (20 nm) and In0.53Ga0.47As layers grown on InP substrates were studied from the as-deposited state up to 550°C using a combination of advanced X-ray diffraction (in-plane reciprocal space mapping), Auger electron spectroscopy and transmission electron microscopy analyses. The phase formation sequence was solved. At low temperature, an amorphous Ti–Ga–As intermixing layer coexists with the Ti film. As of 250°C, the first crystalline phase to form is Ti2Ga3. At 300°C, a new crystalline phase appears, namely TiAs2. On the other hand, TiAs and metallic In form at 350°C and Ti is completely consumed between 450 and 500°C. The diffusion of the various species lead to the formation of a non-nominal Ga-rich InxGa1−xAs layer and at 550°C to the formation of polycrystalline GaAs. Ti was found to be the main diffusing species at low temperature whereas III and V elements are the dominant diffusing species at higher temperatures. The nature of the phases formed above and below the original Ti/InGaAs interface might explain the In accumulation at the interface, the TiAs phase acting as a diffusion barrier.},
	keywords = {AES; X-ray diffraction; TEM; TI; Solid-state reaction; InGaAs; In-plane RSM},
	year = {2020},
	eissn = {1873-4081},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Menyhárd, Miklós/0000-0003-4581-5337}
}