@article{MTMT:34714394,
	title = {Atomic layer deposited Fe-sulphide layers with pyrrhotite structure controlled by the deposition temperature},
	url = {https://m2.mtmt.hu/api/publication/34714394},
	author = {Baji, Zsófia and Pécz, Béla and Fogarassy, Zsolt and Szabó, Zoltán and Cora, Ildikó},
	doi = {10.1016/j.tsf.2024.140267},
	journal-iso = {THIN SOLID FILMS},
	journal = {THIN SOLID FILMS},
	volume = {in press},
	unique-id = {34714394},
	issn = {0040-6090},
	abstract = {Atomic layer deposition was used to grow epitaxial iron sulphide layers on α-Al2O3 substrates. According to the transmission electron microscopic measurements, these Fe-sulphide films had 1C pyrrhotite structure (Fe1-xS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters of the atomic layer deposition method, the structure of epitaxial pyrrhotite films could be controlled, thus the electronic properties of the Fe1-xS films could be influenced: At deposition temperatures below 350°C, the structure contained many faults, and the layers were n type semiconductors, while at higher temperatures, the resulting films were p-type with excellent crystalline structures with disordered vacancies. A post deposition annealing could further improve the crystallinity and induce p-type conductivity.},
	keywords = {Atomic layer deposition; Thermal annealing; Pyrrhotite; Iron sulphide},
	year = {2024},
	eissn = {1879-2731},
	orcid-numbers = {Baji, Zsófia/0000-0001-5051-3128; Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237; Szabó, Zoltán/0000-0002-2150-1459}
}

@article{MTMT:34727537,
	title = {Gyulai József öröksége a funkcionális anyagok tudományában},
	url = {https://m2.mtmt.hu/api/publication/34727537},
	author = {Biró, László Péter and Pécz, Béla},
	journal-iso = {FIZIKAI SZEMLE},
	journal = {FIZIKAI SZEMLE},
	volume = {74},
	unique-id = {34727537},
	issn = {0015-3257},
	year = {2024},
	pages = {73-73},
	orcid-numbers = {Biró, László Péter/0000-0001-7261-0420; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34653875,
	title = {Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition},
	url = {https://m2.mtmt.hu/api/publication/34653875},
	author = {Galizia, Bruno and Fiorenza, Patrick and Schilirò, Emanuela and Pécz, Béla and Fogarassy, Zsolt and Greco, Giuseppe and Saggio, Mario and Cascino, Salvatore and Lo, Nigro Raffaella and Roccaforte, Fabrizio},
	doi = {10.1016/j.mssp.2024.108244},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {174},
	unique-id = {34653875},
	issn = {1369-8001},
	abstract = {Stacked aluminum oxide/aluminum nitride (Al2O3/AlN) layers were deposited on n-type (0001) 4H–SiC by atomic layer deposition (ALD) processes. The structural and chemical properties have been investigated and are consistent with the growth of ∼9 nm oriented (0001) AlN layer, and an upper 20 nm amorphous Al2O3 layer. The entire Al2O3/AlN stack was electrically characterized and compared with respect to a single Al2O3 layer having the same total thickness. The Al2O3/AlN bilayer exhibited a higher dielectric constant (κ = 8.7), a significant reduction of the oxide trapped charges (NOT) from 7.8 × 1012 to 1.8 × 1012 cm−2, as well as a decrease of a factor 2 of the interface traps density (Dit) compared with the Al2O3 single layer values. A large positive flat band voltage shift was observed in the C–V curves acquired on MIS capacitors. The comparison of the behaviour of MIS capacitors fabricated on both n-type and p-type 4H–SiC demonstrated that deep interface states (near the 4H–SiC mid gap) acting as acceptors or donors for the n-type and p-type MIS contribute to the observed behavior. This hypothesis has been also corroborated by TCAD simulations.},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34193521,
	title = {Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)},
	url = {https://m2.mtmt.hu/api/publication/34193521},
	author = {Galizia, Bruno and Fiorenza, Patrick and Bongiorno, Corrado and Pécz, Béla and Fogarassy, Zsolt and Schilirò, Emanuela and Giannazzo, Filippo and Roccaforte, Fabrizio and Nigro, Raffaella Lo},
	doi = {10.1016/j.mee.2023.112103},
	journal-iso = {MICROELECTRON ENG},
	journal = {MICROELECTRONIC ENGINEERING},
	volume = {283},
	unique-id = {34193521},
	issn = {0167-9317},
	year = {2024},
	eissn = {1873-5568},
	orcid-numbers = {Pécz, Béla/0000-0002-4651-6972; Fogarassy, Zsolt/0000-0003-4981-1237}
}

@article{MTMT:34571541,
	title = {Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices},
	url = {https://m2.mtmt.hu/api/publication/34571541},
	author = {Giannazzo, Filippo and Panasci, Salvatore Ethan and Schilirò, Emanuela and Koós, Antal Adolf and Pécz, Béla},
	doi = {10.1016/j.mssp.2024.108220},
	journal-iso = {MAT SCI SEMICON PROC},
	journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
	volume = {174},
	unique-id = {34571541},
	issn = {1369-8001},
	abstract = {Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is currently explored. The integration of two dimensional (2D) materials, such as graphene and molybdenum disulfide (MoS2) provides silicon carbide (SiC) with additional functionalities, allowing to expand its range of applications. This article reviews the state-of-the art methods for scalable growth of graphene and MoS2 on SiC, specifically on the hexagonal polytypes. Some open research directions in materials integration have been also discussed, like the use of epitaxial graphene (Epi-Gr) as interlayer for van der Waals (vdW) epitaxy of GaN or Ga2O3 on SiC substrates, and the growth of 2D forms of GaN materials by confined epitaxy at Epi-Gr/SiC interface. Finally, an overview of recently proposed electronics/optoelectronics applications of these material systems, specifically for high frequency electronics, quantum metrology, THz and UV detectors, is provided. This work can be a useful guide for silicon carbide community on these open research directions.},
	keywords = {sensors; Graphene; silicon carbide; ELECTRONIC DEVICES; MOS; heterogeneous integration},
	year = {2024},
	eissn = {1873-4081},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34727542,
	title = {Transzmissziós elektronmikroszkópia az MFA-ban},
	url = {https://m2.mtmt.hu/api/publication/34727542},
	author = {Lábár, János and Pécz, Béla},
	journal-iso = {FIZIKAI SZEMLE},
	journal = {FIZIKAI SZEMLE},
	volume = {74},
	unique-id = {34727542},
	issn = {0015-3257},
	year = {2024},
	pages = {84-87},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34481837,
	title = {Interface Properties of MoS2 van der Waals Heterojunctions with GaN},
	url = {https://m2.mtmt.hu/api/publication/34481837},
	author = {Panasci, Salvatore E. and Deretzis, Ioannis and Schilirò, Emanuela and La, Magna Antonino and Roccaforte, Fabrizio and Koós, Antal Adolf and Nemeth, Miklos and Pécz, Béla and Cannas, Marco and Agnello, Simonpietro and Giannazzo, Filippo},
	doi = {10.3390/nano14020133},
	journal-iso = {NANOMATERIALS-BASEL},
	journal = {NANOMATERIALS},
	volume = {14},
	unique-id = {34481837},
	abstract = {The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm−2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.},
	keywords = {INTERFACE; GAN; DFT; MOS2; vdW heterostructures; wide-band gap},
	year = {2024},
	eissn = {2079-4991},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:34773813,
	title = {Schottky contacts on sulfurized silicon carbide (4H-SiC) surface},
	url = {https://m2.mtmt.hu/api/publication/34773813},
	author = {Roccaforte, F. and Vivona, M. and Panasci, S.E. and Greco, G. and Fiorenza, P. and Sulyok, Attila and Koós, Antal Adolf and Pécz, Béla and Giannazzo, F.},
	doi = {10.1063/5.0192691},
	journal-iso = {APPL PHYS LETT},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {124},
	unique-id = {34773813},
	issn = {0003-6951},
	year = {2024},
	eissn = {1077-3118},
	orcid-numbers = {Koós, Antal Adolf/0000-0003-0563-948X; Pécz, Béla/0000-0002-4651-6972}
}

@article{MTMT:33138741,
	title = {Encapsulation of the Graphene Nanoribbon Precursor 1, 2, 4‐trichlorobenzene in Boron Nitride Nanotubes at Room Temperature},
	url = {https://m2.mtmt.hu/api/publication/33138741},
	author = {Cadena Nogales, Ana Cristina and Pekker, Áron and Botka, Bea and Dodony, Erzsébet and Fogarassy, Zsolt and Pécz, Béla and Kamarás, Katalin},
	doi = {10.1002/pssr.202200284},
	journal-iso = {PHYS STATUS SOLIDI-R},
	journal = {PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS},
	volume = {17},
	unique-id = {33138741},
	issn = {1862-6254},
	year = {2023},
	eissn = {1862-6270},
	orcid-numbers = {Botka, Bea/0000-0003-3707-3097; Fogarassy, Zsolt/0000-0003-4981-1237; Pécz, Béla/0000-0002-4651-6972; Kamarás, Katalin/0000-0002-0390-3331}
}

@article{MTMT:34332659,
	title = {Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant},
	url = {https://m2.mtmt.hu/api/publication/34332659},
	author = {Dumas, P. and Opprecht, M. and Kerdilès, S. and Lábár, János and Pécz, Béla and Lefloch, F. and Nemouchi, F.},
	doi = {10.1063/5.0166870},
	journal-iso = {APPL PHYS LETT},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {123},
	unique-id = {34332659},
	issn = {0003-6951},
	year = {2023},
	eissn = {1077-3118},
	orcid-numbers = {Lábár, János/0000-0002-3944-8350; Pécz, Béla/0000-0002-4651-6972}
}