Understanding the recombination lifetime of charge carriers () is essential for the
diverse applications of photovoltaic materials, such as perovskites. The study on
the inorganic perovskite, CsPbBr 3 , reveals recombination dynamics exceeding 1 ms
below 200 K and approaching 100 μs at room temperature. Utilizing time‐resolved microwave‐detected
photoconductivity decay in conjunction with injection dependence, it is found that
is dominated by impurity charge trapping. The observed injection dependence is well
corroborated by modeling of the trap mechanism. The ultralong decay time is also consistent
with photoconductivity measurements with a continuous‐wave excitation at powers corresponding
to around 1 Sun irradiation. While charge‐carrier trapping may, in theory, impose
limitations on the photovoltaic efficiency of single‐cell devices, it can also contribute
to increased efficiency in tandem cells and find applications in photodetection, photocatalysis,
and quantum information storage.
