Photosynthetic reaction center (pRC) purified from Rhodobacter sphaeroides 2.4.1 purple
bacteria was deposited on a graphene carrier exfoliated from the liquid phase and
layered on the surface of SiO2/Si substrate for optoelectronic application. Light-induced
changes in the drain-source current vs. gate voltage are demonstrated. Dried photosynthetic
reaction centers/graphene composite on SiO2/Si shows a photochemical/-physical activity,
as a result of interaction with the current flow in the graphene carrier matrix. The
current changes are sensitive to light, due to the contribution from the charge separation
in the pRC, and to the applied gate and drain-source voltages.
