Performance Analysis of Perovskite Solar Cell by Considering Temperature Effect on Physical Parameters of the Absorber Layer

Halal, Ahmad [Alshahmani, Ahmad Halal (Solar Energy, Sem...), szerző] Elektronikus Eszközök Tanszéke (BME / VIK); Alnahhal, Ahmed Issa [ALNAHHAL, AHMED I M (elektronikus eszk...), szerző] Elektronikus Eszközök Tanszéke (BME / VIK); Plesz, Balázs [Plesz, Balázs (Mikroelektronika,...), szerző] Elektronikus Eszközök Tanszéke (BME / VIK)

Angol nyelvű Konferenciaközlemény (Könyvrészlet) Tudományos
    Perovskite solar cells (PSCs) have shown a remarkable rise in power conversion efficiency in a few years time. Despite this, there are still hurdles in the way of commercialization, and their performance in outdoor conditions needs to be investigated further. However, although several reports have investigated the power temperature coefficients of perovskite solar cells, these published results differ significantly and ignored the temperature behavior of open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor. In this paper, a detailed investigation of the temperature-dependent performance was done through a numerical simulation using SCAPS software. In this simulation, we considered the temperatures effect on physical parameters of PSCs, in addition to its impact on series and shunt resistances. The results showed good thermal stability for PSCs with a power temperature coefficient of − 0.25% °C−1 in temperature ranges between 20 and 55 °C, which is low compared to that in crystalline silicon PV cells. However, for temperature ranges above 55 °C, it has been observed a high-power temperature coefficient with a value up to − 0.67% °C−1. This change is due to the fact that the trap states in perovskite materials increase with temperature increment. The results obviously indicate an opposite behavior in the temperature response of the perovskite-based cells compared to crystalline silicon-based solar cells. In PSCs an increasing temperature leads to a slight drop in VOC and JSC values, whereas, in case of c-Si, there is a drastic drop in VOC, while the JSC increases.
    Hivatkozás stílusok: IEEEACMAPAChicagoHarvardCSLMásolásNyomtatás
    2026-03-10 23:21