Despite all the advancements, thermal characterization of GaN HEMT devices is still
a challenging task today. In this paper we present a new transient measurement approach
utilizing the gate current as temperature sensitive electric parameter (TSEP) and
compare the results to the data captured using the channel resistance (Vds). The experienced
differences are small, but repeatable. We examine the various factors that could cause
artifacts in each method, but no evidence of measurement error was found.
