Limits of development of conventional silicon-based integrated
circuits get closer. More and more effort is done
to develop new devices for integrated circuits. A promising
structure is based on the semiconductor-to-metal
phase change of vanadium-dioxide at about 67 °C. In these
circuits the information is carried by combined thermal
and electrical currents. For device modelling and circuit
design, accurate distributed electro-thermal transient
simulation is mandatory. This paper is the first one to
present an electro-thermal transient simulation
method for VO2 devices operating in real-world conditions. The
paper presents three VO2 material models, the
algorithmic extension of an electro-thermal field simulator to
be able to handle hysteresis and the transient simulation
issues of VO2 and the modelling of VO2 based devices. The
paper compares measured and simulated device
characteristics.
