Emerging devices and materials in computing industry are recently of great interest
because classical silicon-based circuit development is saturating due to scaling limits.
Thermal-electronic logic circuit (TELC) concept is a promising approach to enhance
conventional CMOS circuits or even replace them. Semiconductor-to-metal transition
(SMT) of vanadium dioxide (VO2) is the main part of TELC as it allows transmission
and control of information flow both electrically and thermally. The first TELC inverter
is introduced in this article, dynamic simulations are performed to test its behavior
and relation between propagation delay and input voltage is demonstrated. A new phase
transition model is used to upgrade our SUNRED simulator. This new version is accurate
and proved to be suitable for dynamic simulations. This article presents first dynamic
simulation of SMT material.
