HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XXI

Payne, SA [ed.]; Burger, A [ed.]; James, RB [ed.]

English Scientific

Published: International Society for Optics and Photonics (SPIE), Bellingham (WA), United States of America 2019

Series: Proceedings of SPIE - The International Society for Optical Engineering 1996-756X

Identifiers

MTMT: 31581656

Chapters

Kleppinger Joshua W. et al. Investigation on origin of Ru-induced deep-level defects in 4H-SiC epilayer based Schottky diodes by DLTS and theoretical calculations. (2019) In: HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XXI

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2025-04-11 03:56