Eu-doped GaN is a promising material with a wide array of potential applications in
optoelectronics, optogenetics, micro-displays and quantum computing. While this system
has been the subject of intense investigation for the last two decades, several questions
still remain about certain aspects of its optical properties, such as the polarization
dependence of the optical transitions, and the coupling between the 4f-electron configuration
and bulk phonons, as well and the appearance of local phonon modes. Moreover, the
origin of certain emission peaks remains under debate in the literature. In this proceeding,
the results of a systematic series of "site-selective" photoluminescence measurements
are presented, where the properties of pulsed and continuous-wave laser excitation,
such as polarization and intensity, were controlled.
