Thermal-electrical logic circuits can be a possible alternative to CMOS technology.
The basic element of these circuits is the vanadium dioxide resistor. Currently, only
macroscopic models exist for the operation of VO2 resistors. The development of a
submicron model requires the design, production and measurement of submicron-sized
samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are
performed using a macroscopic material model in the range of 200 µm to 50 nm resistor
width and 20 µm to 50 nm length with 50 nm layer thickness. These results in the submicron
range can only be considered as estimates, but they can be used to determine the size
of the samples required for submicron modelling.
